Author Archives: TrendForce

[News] TSMC’s Next-Gen Memory Breakthrough: Seizing Opportunities in AI and High-Performance Computing

TSMC has achieved a breakthrough in next-generation MRAM memory-related technology, collaborating with the Industrial Technology Research Institute (ITRI) to develop a spin-orbit-torque magnetic random-access memory (SOT-MRAM) array chip This SOT-MRAM array chip showcases an innovative computing in memory architecture and …

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[News] Price War Among Chinese, Taiwanese, and Korean Foundries? Chinese Foundries Reportedly Cutting Tape Out Prices

China, Taiwan, and South Korea’s foundry price war continues to heat up. Rumors of price reductions are circulating in the foundry industry, Chinese foundries allegedly lowering their tape out prices, attracting Taiwanese IC design companies to switch their orders. Companies …

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[Insights] Memory Spot Price Update: DRAM Channel Demand Affects Upswing; NAND Flash Upswing to Narrow

According to the latest memory spot price trends released by TrendForce, the DRAM spot market is experiencing limited upswing due to poor channel demand, while the NAND Flash market is expected to enter a period of price stabilization, with the …

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[News] SK hynix’s Expansion Plans Raise Concerns in Taiwan’s DRAM Market

SK hynix, the South Korean memory giant, has revealed plans to consider increasing production of specific DRAM in the first quarter due to improved market conditions. Concerns arise in the market regarding the potential resurgence of capacity utilization, challenging the …

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[News] Intense Competition with Samsung and Intel in Advanced Processes; TSMC Speeds Up 2nm Progress

The global foundry advanced process battle is reigniting, as reported by the Commercial Times. TSMC’s 2-nanometer process at the Baoshan P1 wafer fab in Hsinchu is set to commence equipment installation as early as April, incorporating a new Gate-All-Around (GAA) …

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