Selected Topics-0007_The Current Status of the Global GaN Industry
GaN, with its superior properties such as high breakdown field strength, high saturation electron drift velocity, strong radiation resistance, and good chemical stability, enables the manufacture of optoelectronics, power semiconductors, and high-frequency microwave RF components. This makes GaN ideal for applications including LEDs, transformers, data centers, 5G communications, and EVs.
Growing GaN crystal largely depends on substrates other than GaN—Si, SiC, and Sapphire. This report provides a detailed breakdown of the GaN industry, with a focus on GaN power components, microwave RF components, and raw materials.
Table of Contents
1. Current Development of GaN Power Components
2. Current Development of GaN Microwave RF Components
3. Current Development of GaN Substrates and Epitaxial Materials
4. TRI's View
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