[News] SK Hynix Sets Milestone with 321-Layer NAND Flash Demonstration

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SK Hynix, a semiconductor leader, announced a significant breakthrough in NAND flash technology on August 9 at the Flash Memory Summit in California. They introduced a pioneering 321-layer 1Tb TLC 4D NAND flash memory, marking a notable advancement in NAND capabilities.

As the first company in the industry to surpass 300 layers in NAND development, SK Hynix plans to refine the 321-layer NAND for mass production by mid-2025. This leap builds upon their expertise gained from 238-layer NAND production, showcasing their commitment to pushing technological boundaries.

The efficiency of the 321-layer NAND is 59% higher than its 238-layer predecessor, attributed to enhanced data storage unit stacking. This translates to increased storage capacity and improved chip output per wafer.

In response to the growing demand for high-performance memory solutions in the AI market, SK Hynix unveiled next-gen NAND products, including PCIe 5-equipped enterprise SSDs and UFS 4.0 solutions, catering to the increasing need for advanced storage.

SK Hynix’s dedication to innovation is further emphasized by its ongoing development of PCI 6.0 and UFS 5.0 products, solidifying its market leadership position. Meanwhile, VP of SK Hynix NAND Flash Development, affirmed their commitment to leading the NAND technology domain with the development of fifth-gen 321-layer 4D NAND, tailored to the AI era.

(Source: https://mp.weixin.qq.com/s/OJ3_hw2jQuXT5YGiX0K8-Q)