[News] Samsung Secures Indefinite U.S. Exemption, Initiates Expansion Plans for Xi’an Base in China

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According to icsmart’s report, in October, Samsung Electronics and SK Hynix received an indefinite exemption from the U.S. government’s control over exports to China, allowing them to import semiconductor manufacturing equipment without special permission for their facilities. Samsung has initiated efforts to boost capacity at its Xi’an plant.

Reportedly, Samsung Electronics‘s 12-inch NAND flash M-FAB fab has officially entered the main construction phase.

Established in Xi’an in 2012, it is Samsung’s sole overseas memory production base and has evolved into the world’s largest NAND Flash manufacturing facility. The fab produces over 265,000 12-inch wafers per month, contributing to over 40% of Samsung’s total NAND Flash flash production.

According to publicly available data, the initial investment for the first phase of Samsung’s Xi’an fab in China was USD 10.87 billion, and it commenced production in May 2014, primarily manufacturing 3D NAND flash memory chips.

On August 30, 2017, Samsung Semiconductor announced a USD 7 billion investment to build the second phase of the 12-inch NAND flash project, establishing a new NAND flash production line. In December 2019, the company decided to further invest USD 8 billion to expand the scale of the second-phase project.

Business Korea reports that Samsung executives have decided to upgrade the Xi’an NAND Flash fab to a 236-layer stacking process and significantly expand production. Industry sources indicate that Samsung has initiated the procurement of semiconductor equipment, with deliveries scheduled for the end of the year.

In 2024, the company plans to introduce eighth-generation NAND Flash equipment in succession. This move is seen by the industry as a strategy to counter the soft demand in the global NAND Flash market.

(Photo credit: Samsung)