[News] SK Hynix Plans to Manufacture 3D NAND over 400 Layers at -70°C with the Help of TEL

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SK Hynix has been exploring the potential of manufacturing 3D NAND at ultra-low temperatures, which may enable the South Korean memory giant to produce its new-generation product with over 400 layers, South Korea’s media outlet TheElec revealed.

According to the report, instead of testing in its own wafer fabs, SK Hynix has sent test wafers to Tokyo Electron (TEL) to test the performance of the latter’s latest cryogenic etching tool. Unlike existing ones, which usually operate at 0~30°C, the Japanese fab equipment maker’s new etching equipment is capable of performing high-speed etching at -70°C.

According to a press release by TEL, its latest memory channel hole etch technology enables a 10-µm-deep etch with a high aspect ratio in just 33 minutes. It can also reduce the global warming potential by 84% compared with previous technologies.

Industry sources cited by the report indicated that SK Hynix plans to utilize a triple-stack structure for 321-layer NAND. However, when it comes to etching in deep channel holes, achieving uniformity is a major challenge. As a result, companies usually adopt double or even triple-stack structures for 3D NAND manufacturing due to the considerable difficulty in etching vertical holes.

With the help of TEL’s new etching equipment, it may be possible in the future to manufacture 3D NAND with over 400 layers, even in structures with fewer stacked layers, allowing memory manufacturers to reduce costs thanks to simplified processes. SK Hynix aims to produce 3D NAND products with over 400 layers, and depending on their performance, these NAND chips may adopt single or double-stack structures.

 

(Photo credit: SK hynix)