[News] Samsung Considers to Manufacture NAND over 1000 Layers by Using Ferroelectric Materials

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At its 2022 Tech Day, Samsung revealed the target to release advanced NAND chips with over 1000 layers by 2030. According to Wccftech, the South Korean memory giant now seems to get closer to the ambitious goal, as it plans to apply new ferroelectric” materials on the manufacturing of NAND.

At the latest VLSI Technology Symposium held in Honolulu, a doctoral student from the Electrical Engineering Department at the Korea Advanced Institute of Science and Technology (KAIST) shared how “hafnia ferroelectrics” may serve as a key enabler for low voltage & QLC 3D VNAND beyond 1K layer experimental demonstration and modeling, of which the interaction between charge trapping in the metal band and the ferroelectric switching effect could maximize the ‘positive feedback’ of dual effects, enable low operating voltage, a wide range of storage window, and negligible disturbance at a bias voltage of 9 V.

Though Samsung is not directly involved in the R&D process, according to Wccftech, the researchers are said to be directly linked to the company.

The news follows Samsung’s official announcement in April, confirming that it has begun mass production for its one-terabit (Tb) triple-level cell (TLC) 9th-generation vertical NAND (V-NAND), boasted to improve the bit density by about 50% compared to the 8th-generation V-NAND, with the number of layers reaching 290, according a report by The Korea Economic Daily.

Industry sources cited by the report also revealed that Samsung’s future tenth-generation V-NAND is expected to reach 430 layers, which is scheduled to be released next year. Now the NAND ceiling may be able to hit 1000 layers, if the new ferroelectric materials work out fine.

Before Samsung, major storage giants such as Micron and SK Hynix had already surpassed the 200-layer milestone. Micron reached 232 layers with a storage density of 19.5Gb per square millimeter, while SK Hynix achieved 238 layers with a storage density of 14.4Gb per square millimeter. In early May, South Korea’s media outlet TheElec also revealed that SK Hynix has been exploring the potential of manufacturing 3D NAND at ultra-low temperatures, which may enable the company to produce its new-generation product with over 400 layers, with the help of Tokyo Electron (TEL).

(Photo credit: Samsung)