[News] Nanya Technology Chairman Names 10nm 1B Process as Key Expansion Focus for the Year

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DRAM giant Nanya Technology held its shareholder meeting earlier today, during which Chairman Chia-Chau Wu reported on the company’s operations. According to a report from UDN, He mentioned that despite challenges such as unfavorable market conditions, geopolitical tensions, and the US-China trade conflict, Nanya Technology experienced a transition from profit to loss last year.

Nevertheless, the company continues to possess strong technological capabilities. This year, Nanya plans to introduce more products using the 10nm 1B process. Additionally, the 10nm 1C process is set to complete its first product design by the end of this year and begin trial production early next year. In 2026, Nanya will introduce new facilities, and by integrating miniaturization and Through-Silicon Via (TSV) processes, it will enter the high-capacity DRAM module market to meet the demand from the server market.

Wu emphasized that the 1B process products are Nanya Technology’s key expansion focus this year. In addition to promoting 8Gb/4Gb DDR4 to the personal computer and bare die application markets, the 16Gb DDR5 will initially target mainstream markets, including personal computers and servers.

Wu further highlighted that Nanya Technology continues to invest in research and development during the industry’s adjustment period to strengthen its future competitiveness.

Currently, in addition to developing three products under the second-generation 10nm (1B) process, Nanya Technology is also developing four other products: 16Gb DDR5 and miniaturized versions, 16Gb LPDDR4, 16Gb LPDDR5, and 4Gb DDR3, which will also gradually enter trial production.

He added that this year, Nanya Technology will simultaneously develop Through-Silicon Via (TSV) process technology. In the future, by combining the miniaturized DDR5 with the TSV process, Nanya aims to produce high-capacity DRAM modules to meet the demand of the server market.

Furthermore, the third-generation 10nm (1C) process technology is on track, with the design of the first 16Gb DDR5 product expected to be completed by the end of the year and trial production beginning early next year.

To support the transition to the 1B process and the construction of new facilities, Nanya Technology’s capital expenditure for this year is approximately TWD 26 billion (roughly USD 805.2 million), with less than half of the budget allocated to production equipment.

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(Photo credit: Nanya Technology)