According to a report from Nikkei citing sources, memory giant Micron Technology is building a pilot production line for advanced high-bandwidth memory (HBM) in the United States and is considering producing HBM in Malaysia for the first time to capture more demand from the AI boom.
Reported on June 19, Micron is said to be expanding its HBM-related R&D facilities at its headquarters in Boise, Idaho, which include production and verification lines. Additionally, Micron is considering establishing HBM production capacity in Malaysia, where it already operates chip testing and assembly plants.
Nikkei’s report further noted that Micron’s largest HBM production facility is located in Taichung, Taiwan, where expansion efforts are also underway. Micron is said to have set a goal to triple its HBM market share to 24-26% by the end of 2025, which would bring it close to its traditional DRAM market share of approximately 23-25%.
Earlier this month, a report from a Japanese media outlet The Daily Industrial News also indicated that Micron planned to build a new DRAM plant in Hiroshima, with construction scheduled to begin in early 2026 and aiming for completion of plant buildings and first tool-in by the end of 2027.
Per industry sources cited by TechNews, Micron is expected to invest between JPY 600 to 800 billion in the new facility, located adjacent to the existing Fab15 facility. Initially, the new plant will focus on DRAM production, excluding backend packaging and testing, with a capacity emphasis on HBM products.
Micron, along with SK Hynix, has reportedly received certification from NVIDIA to produce HBM3e for the AI chip “H200.” Samsung Electronics has not yet received approval from NVIDIA; its less advanced HBM3 and HBM2e are currently primarily supplied to AMD, Google, and Amazon.
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(Photo credit: Micron)