[News] SK keyfoundry Advances in GaN Power Semiconductors, Reportedly Producing for Tesla Soon

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SK keyfoundry, a subsidiary of memory giant SK hynix, has achieved notable progress in the development of Gallium Nitride (GaN) power semiconductors. According to the latest report by Business Korea, the foundry would begin producing power semiconductors for Tesla in the second half of 2024.

According to the report, SK keyfoundry announced in early June that it has achieved the primary device characteristics of a 650V GaN High Electron Mobility Transistor (HEMT), which surpasses traditional silicon-based semiconductors in both efficiency and durability. This advancement aligns with SK keyfoundry’s plan to finalize the development of GaN power semiconductors by the end of this year.

It is worth noting that TSMC has also entered the GaN market a few years ago, as it provides GaN process for manufacturing 100/650V discrete GaN power devices for customers. For instance, in 2020, the world’s largest foundry has announced to collaborate with STMicroelectronics. According to its press release, ST’s GaN products will be manufactured using TSMC’s leading GaN process technology, including applications relating to automotive converters and chargers for hybrid and electric vehicles.

Regarding the development of SK keyfoundry, Business Korea noted that the company established an official team in 2022 to focus on the development of GaN technologies. Citing industry sources on June 20^th, the report stated that SK keyfoundry will reportedly begin producing power semiconductors for Tesla in the second half of this year.

Moreover, it also mulls to broaden its business scope, entering markets like fast-charging adapters, data centers, and energy storage systems afterwards. Starting in November, the company plans to manufacture power management chips (PMIC) at its 8-inch wafer fab in Cheongju.

Though foundries have not significantly contributed to SK hynix’s revenue so far, the development of power semiconductors could boost overall foundry sales. According to the report, SK keyfoundry also provides contract manufacturing for non-memory semiconductors such as Display Driver ICs (DDI) and Microcontroller Units (MCU), further diversifying its product lineup.

In the current landscape of the new energy market, third-generation semiconductors such as SiC and GaN have gained significant traction. SiC (Silicon Carbide) and GaN could offer significant benefits over traditional silicon.

To elaborate, semiconductor materials have the so-called “bandgap,” an energy range in a solid where no electrons can exist. According to German chipmaker Infineon, GaN has a bandgap of 3.4 eV, compared to silicon’s 1.12 eV bandgap. The wider bandgap of GaN allows it to sustain higher voltages and temperatures than silicon. While SiC dominates the high-power domain, GaN excels at lower power levels, offering lower conduction losses.

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• [News] Infineon in GaN and SiC Expansion Drive Advancements in the New Energy Market

(Photo credit: SK keyfoundry)