[News] SK hynix Announces First 1c DDR5, Set for Shipment Next Year

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As per its official release, SK hynix has announced that it has developed the industry’s first 16Gb DDR5 built using its 1c node, the sixth generation of the 10nm process. Reportedly, it will be ready for mass production of the 1c DDR5 within the year to start volume shipment next year.

To reduce potential errors stemming from the procedure of advancing the process and transfer the advantage of the 1b, the company claims in the release that it extended the platform of the 1b DRAM for development of 1c.

As per the press release, the operating speed of the 1c DDR5, expected to be adopted for high-performance data centers, is improved by 11% from the previous generation, to 8Gbps.

With power efficiency also improved by more than 9%, SK hynix expects adoption of 1c DRAM to help data centers reduce the electricity cost by as much as 30% at a time when advancement of AI era is leading to an increase in power consumption.

Per a report from Businesskorea, the difficulty of advancing the shrinking process for 10nm-range DRAM technology has increased with each generation.

However, with the official release this time, SK hynix has become the first in the industry to overcome these technological limitations by achieving a higher level of design completion.

Per another report from Korea JooAng Daily, this marks a win for SK hynix, as its rival Samsung Electronics had previously outpaced it in the development of the 1b DRAM, which corresponds to nodes in the 12-nanometer range.