[News] A 8-Inch SiC Wafer Fab Co-Built by San’an and ST to Start Production Soon

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As per Chongqing News Broadcast, the San’an-ST project, with a total investment of approximately CNY 30 billion, is close to completion. The substrate factory is expected to start production this month, two months ahead of schedule.

The project, jointly developed by Chongqing San’an and ST, includes a chip factory and a substrate factory, focusing on the production of SiC power chips and substrates. The substrate factory, fully funded by San’an Semiconductor, is set to produce 480,000 8-inch SiC substrates annually.

The chip plant, a joint venture between San’an Semiconductor and ST, aims for an annual production capacity of 480,000 automotive-grade SiC MOSFET power chips.

San’an, through its wholly-owned subsidiary Hunan San’an, established Chongqing San’an for the substrate factory. The total investment for this factory is approximately CNY 7 billion, focusing on the growth and manufacturing of SiC substrates, with an annual production capacity of 480,000 8-inch SiC substrates.

San’an STMicroelectronics, a joint venture between Hunan San’an (51%) and ST (China) Investment (49%), was established in August 2023 with a registered capital of USD 612 million.

This chip factory has a total investment of USD 3.2 billion and aims for an annual revenue of CNY 13.9 billion, with an annual production capacity of 480,000 8-inch automotive-grade SiC MOSFETs.

San’an has disclosed that the project is currently in the critical stage of equipment installation and commissioning, and the substrate factory is expected to be ready for operation by the end of August, while the chip factory is projected to be fully operational by the end of November.

Read more

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(Photo credit: STMicroelectronics)