[News] Samsung Reportedly Plans 400-layer Vertical NAND by 2026, Targeting 1,000-layer NAND by 2030

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As HBM has become a key battlefield for memory giants amid the AI wave, NAND chips with more layers, which are also ideal for high-capacity solid-state drives (SSDs) used in AI data centers, are in great demand as well. According to the latest report by the Korea Economic Daily, Samsung aims to introduce the 400-layer vertical NAND by 2026 to capture a leading position in the booming AI-driven storage market.

According to the Korean media outlet, following Samsung’s current mass production of its 286-layer V9 NAND flash chips, the company’s Device Solutions division is targeting the production of vertical NAND with a minimum of 400 stacked layers as early as 2026.

Samsung’s major rival, SK hynix, is also developing 400-layer NAND, aiming to get the technology ready for mass production by the end of 2025, according to a report by etnews in August. The current HBM leader reportedly eyes the full-scale production for the 400-layer NAND to begin in the first half of 2026, which is roughly similar to Samsung’s timetable.

Samsung Develops “Dream NAND for AI” to Boost Density Per Unit Area by 1.6 Times

The report by the Korea Economic Daily notes that in conventional NAND chips, memory cells are stacked above the peripheral circuitry, which acts as the chip’s brain. However, stacking beyond 300 layers has frequently caused damage to the peripheral.

Back in 2013, Samsung was the industry’s first to introduce V NAND chips with vertically stacked storage cells to maximize capacity, the report notes.

Now, to address the issue occurred, Samsung is reportedly developing its advanced 10th-generation V NAND (V10), in which it intends to use an innovative bonding technology where cells and the peripheral circuitry are manufactured separately on distinct wafers before being bonded together.

Named by Samsung as bonding vertical NAND Flash or BV NAND, the technology is also praised by Samsung as the “dream NAND for AI,” stating that it will boost bit density per unit area by 1.6 times, according to the Korea Economic Daily.

This method is expected to support “ultra-high” NAND stacks by offering substantial storage capacity and efficient heat dissipation, which is ideal for SSDs used in AI data centers.

Roadmap for 1,000-layer NAND Revealed

Samsung is indeed ambitious as it also reveals the long-term roadmap for NANDs with more layers. According to the Korea Economic Daily, it plans to advance its stacking technology with the launch of V11 NAND in 2027, featuring a 50% increase in data input and output speed. Moreover, executives cited by the report state that the memory giant also aims to develop NAND with over 1,000 layers by 2030.

According to TrendForce’s latest research, in the second quarter of 2024, Samsung maintained its global leadership in the NAND Flash market with a 36.9% market share, up 0.2% from the previous quarter. SK Group followed with a 22.1% share, down 0.1%. Other key players include Kioxia (13.8%), Micron (11.8%), and Western Digital (10.5%).

Read more

• [News] SK hynix Reportedly Develops NAND over 400 Layers, Eyeing Mass Production Ready by 2025
• [News] Outpacing Samsung or the End of Race? Kioxia Aims 1000-layer NAND by 2027

(Photo credit: Samsung)