[News] Investment of USD 345 million, RF Manufacturer Expands GaN Wafer Production Facilities

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On January 14, U.S. RF manufacturer MACOM announced plans to invest USD 345 million (approximately 2.528 billion RMB) to comprehensively upgrade its semiconductor wafer manufacturing facilities in Massachusetts and North Carolina.

Specifically, the company’s Massachusetts facility will expand its cleanroom, upgrade existing 4-inch wafer production lines (including GaAs, GaN, silicon, and other III-V materials), and introduce advanced 6-inch GaN-on-SiC (gallium nitride on silicon carbide) manufacturing technology.

At the same time, the facility’s infrastructure, such as HVAC, utilities, and solar energy systems, will also be comprehensively upgraded. The North Carolina facility will focus on enhancing 6-inch wafer production capacity by installing advanced Metal Organic Chemical Vapor Deposition (MOCVD) equipment to support the development of RF GaN-on-SiC processes.

Stephen G. Daly, President and CEO of MACOM, stated: “This investment plan is not only an upgrade of MACOM’s existing manufacturing capabilities but also a significant strategic layout for the future development of semiconductor technology. By enhancing domestic semiconductor manufacturing capacity in the U.S., the company can better serve customers and drive industry innovation.”

(Photo credit: MACOM)