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[News] Samsung Reportedly Targets 1c DRAM Yield Improvement by Mid-2025 with Redesign Plans


2025-02-11 Semiconductors editor

While earlier reports suggested Samsung was gearing up for 1c DRAM mass production, ZDNet now suggests the company has been redesigning it since the second half of 2024, opting for larger chip sizes to boost yield over productivity and performance.

Notably, 1c (6th-gen 10nm) DRAM would be a critical component that determines the company’s competitiveness in HBM4. According to the ZDNet report, Samsung plans to apply 1c DRAM to HBM4 production, as it aims to gain a competitive edge over archrivals like SK hynix and Micron.

However, the report reveals that Samsung’s 1c DRAM has faced yield issues since development started, with initial production in late 2024 not meeting expectations. Another MoneyToday report suggests that an ideal yield for mass production readiness is typically around 60-70%.

Therefore, Samsung’s new approach focuses on keeping the core circuit compact and expanding the surrounding circuits to improve yield, as highlighted by the report. This aims to ensure stable mass production of high-value memory like HBM, with significant yield improvements expected by May or June, the report adds.

According to the report, Samsung plans to mass-produce its next-gen 1c DRAM in the second half of 2025, featuring a circuit linewidth of 11–12nm, compared to 12–13nm for the previous 1b DRAM generation.

However, whether Samsung would be capable of reclaiming the throne remains to be seen, as SK hynix may also be planning to switch to 1c DRAM for HBM production. The MoneyToday report reveals that SK hynix is set to become the first in the world to mass-produce DRAM using the 1c process as soon as in February.

Notably, the rapid progress of its Chinese rival also weighs heavily on Samsung. According to fnnews, CXMT has begun mass production of DRAM using a D1z (sub-16nm) process.

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(Photo credit: Samsung)

Please note that this article cites information from fnnewsMoneyToday and ZDNet.

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