[News] Samsung Reportedly Teams Up with Apple for Next-Gen LPW DRAM, Eyes 2028 Mass Production

As Samsung advances HBM3E validation with key clients like NVIDIA, it is also targeting the next-gen mobile DRAM market. According to The Bell, the company is developing Low Power Wide I/O (LPW) DRAM with multiple partners, including Apple, to meet the growing demand for on-device AI.

The Bell indicates that Samsung expects LPW DRAM mass production to begin in 2028. Besides Apple, the memory giant is also working with other SoC customers on LPW DRAM development, with its own Mobile eXperience (MX) division among the partners, as noted in the report.

As per The Bell, stacking low-power DDR enables LPW DRAM, also touted as mobile DRAM, to deliver higher performance. However, unlike HBM, it does not incorporate a base die for logic functions.

Notably, with the rise of on-device AI, SK hynix is developing a similar technology called “Vertical Fan-Out (VFO),” targeting mobile applications, the report suggests.

(Photo credit: SK hynix)

A previous Business Korea report mentioned that the two memory giants are teaming up on “Low Power Double Data Rate 6 (LPDDR6)-Processing In Memory (PIM)” products, as they try to formulate plans for the standardization timeline with the Joint Electron Device Engineering Council (JEDEC).

Samsung’s latest datasheet, cited by The Bell, shows LPW DRAM reaching 204.8GB/s I/O speed while consuming just 1.87pJ—significantly more efficient than LPDDR5X.

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• [News] Samsung and SK hynix Reportedly Unite to Standardize LPDDR6-PIM for On-device AI

(Photo credit: Samsung)