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Despite ongoing uncertainty surrounding Trump’s proposed tariffs, leading memory manufacturers are moving forward with HBM development. According to Chosun Biz, industry sources on the 16th indicate that Samsung’s 4nm logic dies have achieved a test production yield exceeding 40%. As these logic dies are a key component of Samsung’s 12-layer HBM4, the improved yield is expected to accelerate the development of Samsung’s HBM4, the report highlights.
Further Challenges for Samsung’s HBM4 Development
Sources cited in the report state that an initial test yield of 40% is considered strong enough to proceed with the project. However, the report also emphasizes that a key challenge for Samsung will be stabilizing both the DRAM used in its HBM4 and the accompanying packaging technology.
As noted in the report, the future success of Samsung’s HBM4 will hinge on the development of sixth-generation (1c) DRAM—fabricated using a 10nm-class process—by its memory division. The 12-layer HBM4 product will integrate this 1c DRAM with the logic die.
While rival SK hynix is using the previous-generation 1b DRAM in its HBM4, the report suggests that if Samsung can achieve stable mass production of 1c DRAM, it could secure a performance advantage in the HBM4 market.
In addition, the report notes that packaging—which combines the 1c DRAM and logic die into the final product—is also a decisive factor. It states that Samsung employs a different packaging approach from SK hynix. For its 12-layer HBM product, Samsung uses a method known as Thermal Compression Non-Conductive Film (TC-NCF), which involves placing a film-type material between each stacked chip. However, this technique has faced criticism for making heat dissipation more challenging, the report adds.
In terms of the next-gen HBM4, Sedaily indicates that Samsung aims to enter mass production within 2025.
Meanwhile, Sedaily report notes that Samsung, after revamping its HBM3e product design, aims to begin mass supply of the 8-layer product in April. According to another report from South Korean media outlet EBN, if things go smoothly, Samsung may receive qualification of its HBM3E 12-layer product from NVIDIA as early as May.
HBM4 Development Efforts by Other Major Memory Players
Last month, SK hynix announced that it has shipped the world’s first 12-layer HBM4 samples to major customers, as noted by its press release.
For Micron, a previous report from Business Korea noted that Micron expects its HBM4 to begin shipping in 2026, while most of the company’s HBM manufactured in 2H25 would be 12-layer products.
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(Photo credit: Samsung)
