[News] Samsung Announced Breakthrough for Novel Memory Technology

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Recently, Samsung Electronics announced that the development of its 8nm eMRAM has almost been completed and process upgrades is underway as planned.

According to a report from WeChat account DRAMeXchange, as a new type of non-volatile memory technology based on magnetic principles, eMRAM falls under the category of embedded MRAM (Magnetoresistive random-access memory). Compared to traditional DRAM, eMRAM offers faster access speeds and higher durability. Unlike DRAM, it does not require data refreshing, and its write rate is 1000 times that of NAND.

Due to these characteristics, the industry holds a positive outlook on the potential of eMRAM, especially in scenarios that demand high performance, energy efficiency, and durability.

Samsung Electronics is one of the main producers of eMRAM and is dedicated to promoting its adoption in the automotive sector. In 2019, Samsung developed and mass-produced the industry’s first eMRAM based on 28nm FD-SOI. After achieving the production capability of 28nm eMRAM, Samsung reportedly plans to mass-produce 14nm eMRAM in 2024, 8nm in 2026, and 5nm in 2027.

Samsung is confident about the application of eMRAM in future automotive uses, stating that its product’s temperature tolerance has reached 150-160°C, which can fully meet the stringent requirements of the automotive industry for semiconductors.

In recent years, the proliferation of big data and artificial intelligence applications has generated massive memory demands and placed higher requirements for memory technologies. Against this backdrop, new memory technologies have continuously emerged, among which SCM (Storage Class Memory) is a representative, which combines high-speed read and write performance of DRAM with the persistent storage capability of NAND flash, potentially addressing issues of small capacity, volatility, and high cost associated with DRAM. Key SCM products include phase-change memory (PCM), resistive RAM (ReRAM), magnetoresistive RAM (MRAM), and nanotube RAM (NRAM).

Aside from Samsung, companies like Kioxia and ByteDance have also acted vigorously in the new memory field this year. In April, Kioxia’s CTO Hidefumi Miyajima stated that compared to competitors developing both NAND and DRAM, Kioxia is at a competitive disadvantage in terms of business diversity, making the cultivation of new memory product business like SCM a necessity. With this goal in mind, Kioxia reorganized its “Memory Technology Research Laboratory” into the “Advanced Technology Research Laboratory.”

In March, it was reported by South China Morning Post that ByteDance invested in a Chinese memory company Innostar, becoming its third-largest shareholder. Innostar focuses on the R&D of new memory technologies like ReRAM and related chip products covering three categories: high-performance industrial control/automotive-grade SoC/ASIC chip, computing-in-memory (CIM) IP, chip and system-on-memory (SoM) chip.

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(Photo credit: Samsung)