[News] SK hynix Introduces Data Center SSD Built on 238-high 4D NAND, Targeting Mass Production in 2025

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With the advent of the AI era, customer demand for high-performance NAND solutions such as SSDs for data centers, as well as ultra-fast DRAM chips including high bandwidth memory (HBM), is growing. In line with this trend, SK hynix has introduced a new product, PEB110 E1.S (PEB110), with improved data processing speed and power efficiency by applying the fifth-generation (Gen5) PCIe1 specifications.

It is worth noting that the new product builds on the company’s best-in-class 238-high 4D NAND, boasting the most competitive standards in the industry in terms of cost, performance and quality, according to Ahn Hyun, Head of the N-S Committee at SK hynix.

According to its press release, SK hynix is currently in the qualification process with a global data center customer, aiming to start mass production of the product in the second quarter of next year.

In its roadmap, the memory giant expects to meet diverse customer needs with a more robust SSD portfolio. Following the successful mass production of PS10102, it now introduces PEB110 E1.S (PEB110), a high-performance solid-state drive (SSD) for data centers.

According to SK hynix, PCle Gen5, which is applied to the new product, provides twice the bandwidth of the fourth generation (Gen4), enabling PEB110 to achieve data transfer rates of up to 32 gigatransfers per second (GT/s). This enables PEB110 to double the performance of the previous generation and improve power efficiency by more than 30%.

SK hynix has also applied the security protocol and data model technology, or SPDM, to PEB110, for the first time for its data-center SSDs to significantly enhance information security features.

SK hynix notes that the product will be released in three capacity versions—2 terabyte (TB), 4 TB, and 8 TB—and supports the OCP3 version 2.5 specifications for greater compatibility across global data centers.

Read more

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(Photo credit: SK hynix)