[News] Samsung Cuts Photoresist Usage in 3D NAND Production, Boosting Cost Efficiency

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Samsung has significantly reduced the amount of photoresist (PR) used during the photolithography process in its 3D NAND flash production, according to a report by The Elec.

Citing industry sources, The Elec revealed that the Samsung has halved the volume of PR used in the production of its advanced NAND chips. Previously, Samsung utilized 7 to 8 cc of PR per coating. This has now been reduced to just 4 to 4.5 cc.

To achieve this reduction, Samsung optimized its manufacturing process by controlling the spin rate of its coating equipment and fine-tuning etching conditions after PR application. These changes aim to enhance cost efficiency, a critical factor in semiconductor manufacturing.

Samsung has traditionally relied on thick krypton fluoride (KrF) photoresist (PR) for its 3D NAND production. Thick PR offers significant advantages in simultaneously adding multiple layers, a critical factor in enhancing the efficiency of building multi-layered NAND structures. The report highlights that, for example, a 100-layer NAND flash requires the formation of 100 layers. Using thick PR allows Samsung to create multiple layers in a single step, greatly improving process efficiency.

However, thick PR presents challenges, such as coating uniformity issues due to its high viscosity. To address this, Samsung has collaborated with Dongjin Semichem since before 2013, when the company began production of its first-generation 3D NAND chips.

(Photo credit: Samsung)