[News] Fueled by AI Demand, TSMC Targets its System-on-Wafer Manufactured with CoWoS to Enter Mass Production in 2027

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At TSMC’s 2024 Technology Symposium in late May, Kevin Zhang, TSMC Senior Vice President of Business Development, has shared the company’s latest development on advanced packaging. This article recaps the highlights in the forum, featuring TSMC’s breakthroughs regarding advanced packaging.

Advanced Packaging

SoW (System-on-Wafer Integration Technology)

SoW adopts TSMC’s InFO and CoWoS packaging technologies to integrate logic dies and HBM memory on the wafer. By doing so, TSMC aims to enhance performance and speed not just at the chip level, but the system level as well.

Currently, TSMC’s system-on-wafer manufactured with InFO technology has entered mass production. Afterwards, the company plans to develop and launch SOW using CoWoS technology to integrate SoC or SoIC, HBM, and other components together.

TSMC eyes its System-on-Wafer manufactured with the CoWoS technology to enter mass production in 2027, while its target applications would include AI and HPC, expanding the computational power needed for data centers of the next generation.

3DFabric

TSMC’s 3DFabric technology family includes three major platforms: SoIC, CoWoS, and InFO, encompassing both 2D and 3D front-end and back-end interconnect technologies.

SoIC

The SoIC platform offers two stacking solutions: SoIC-P (Bumped) and SoIC-X (Bumpless). The first solution, SoIC-P, is a micro-bump stacking solution suitable for cost-effective applications such as mobile devices.

The other solution, SoIC-X, adopts Hybrid Bonding, which is ideal for HPC and AI demands. The advantage of this solution is that the pitch between contacts can be reduced to a few micrometers (µm), increasing the interconnect interface between two chips while achieving a new level of interconnect density.

TSMC’s current bond pitch density with Hybrid Bonding has been reduced to 6 micrometers, and it aims to further reduce it 2 to 3 micrometers. In the meantime, the company has been advancing micro-bump technology, currently at over 30 micrometers, with the future goal of reducing it to the teens.

TSMC revealed that customer demand for SoIC-X technology has been increasing, with 30 customer design tape-outs expected by the end of 2026.

CoWoS / InFO

The CoWoS advanced packaging family includes three members: CoWoS-S, CoWoS-L, and CoWoS-R. The three platforms can mainly be differentiated by their intermediate layer materials, which may also affect the cost. In other words, CoWoS-S utilizes silicon interposer, CoWoS-L uses LSI (Local Silicon Interconnect), while CoWoS-R uses RDL (Redistribution Layer) wiring to connect small chips.

Depending on product requirements, SoIC chips can be integrated with either CoWoS or InFO. AMD’s MI300A / MI300 X is the first product to adopt SoIC-X and CoWoS technology.

One of the most well-known product which adopts TSMC’s CoWoS-L technology would be NVIDIA’s Blackwell AI accelerator, which integrates two SoCs using 5nm with eight HBM into one module.

Moreover, TSMC’s CoWoS technology integrates advanced SoCs/SoICs with HBM to meet the requirements of AI chips. Its SoIC has entered mass production through the CoWoS-S platform. Going forward, TSMC plans to develop a SoIC chip with an eight-time mask size (using the A16 process) and a CoWoS solution with 12 HBM stacks. This updated version is expected to enter mass production in 2027.

(Photo credit: TSMC)