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Per a report by BusinessKorea, SK hynix Vice President Ryu Seong-su announced the company’s strategic plan in the HBM field during the SK Group Icheon Forum 2024 held on August 19. SK hynix plans to develop a product that boasts dozen of times the performance of existing HBM technologies.
The report indicates that SK hynix aims to develop a product with performance 20 to 30 times higher than current HBM offerings, achieving product differentiation.
During the forum, Ryu Seong-su emphasized that SK hynix will concentrate on leveraging advanced execution capabilities to provide memory solutions tailored for the AI (Artificial Intelligence) sector to meet the demands of the mass market.
Amid AI advancements, the demand for high-performance HBM has been on the rise, making it a hotspot among global high-tech companies.
According to Ryu Seong-su, Apple, Microsoft, Google Alphabet, Amazon, NVIDIA, Meta, and Tesla—seven of the world’s tech giants—have all engaged with SK hynix , seeking customized HBM solutions tailored to their specific needs.
Compared to existing HBM products, customized HBM offers clients more options in terms of PPA (Performance, Power, Area), thereby delivering more substantial value.
For example, Samsung believes that the power consumption and area of semiconductors can be largely reduced by stacking HBM memory with custom logic chips in a 3D configuration.
On this trend towards customization in the HBM sector, TrendForce predicted that HBM industry will become more customization-oriented in the future. Unlike other DRAM products, HBM will increasingly break away from the standard DRAM framework in terms of pricing and design, turning to more specialized production.
SK hynix CEO Kwak Noh-Jung also believes that as HBM4 continues to advance, the demand for customization will grow, which is likely to become a global trend and shift towards a more contract-based model. Moreover, it is expected to mitigate the risk of oversupply in the memory market.
In fact, HBM market is gradually evolving from a “general-purpose” to a “customization-oriented” market with the rise of AI. Later, as breakthroughs are made in speed, capacity, power consumption, and cost, HBM is poised to play an even more critical role in the AI sector.
Currently, buyers have already begun making customized requests for HBM4, and both SK hynix and Samsung Electronics have developed strategies to address these demands.
SK hynix has been in collaboration with TSMC to develop the sixth generation of HBM products, known as HBM4, which is expected to enter production in 2026.
Unlike previous generations, inclusive of the fifth-generation HBM3E, which were based on SK hynix’s own process technology, HBM4 will leverage TSMC’s advanced logic process, which is anticipated to significantly enhance the performance of HBM products.
Additionally, adopting ultra-fine processing technology for the base die could enable the addition of more features.
SK hynix has stated that with these two major technological upgrades, the company plans to produce HBM products that excel in performance and efficiency, thereby meeting the demand for customized HBM solutions.
Ryu Seong-su believes that as customized products enjoy burgeoning growth, memory industry is approaching a critical point of paradigm shift, and SK hynix will continue to make advantage of the opportunities presented by these changes to advance its memory business.
Meanwhile, Samsung Electronics, as a leading IDM semiconductor company with capabilities in wafer foundry, memory, and packaging, is also actively promoting customized HBM AI solutions.
In July 2024, Choi Jang-seok, head of the new business planning group at Samsung Electronics’ memory division, stated at the “Samsung Foundry Forum” that the company intends to develop a variety of customized HBM memory products for the HBM4 generation and announced collaborations with major clients like AMD and Apple.
Choi Jang-seok pointed out that the HBM architecture is undergoing profound changes, with many customers shifting from traditional general-purpose HBM to customized products. Samsung Electronics believes that customized HBM will become a reality in the HBM4 generation.
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(Photo credit: Micron)
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Earlier in July, ASML CEO Christophe Fouquet noted that though China’s progress on cutting-edge chips is ten years behind the U.S., the world is in need of the legacy chips it manufactured. Now it seems that in order to become “the world’s factory,” China has to turn itself into “the world’s market” first.
And it has already been doing so. Over 40% of major semiconductor equipment manufacturers’ revenue in the second quarter of 2024, including that of Applied Materials, ASML and Tokyo Electron, came from China. In addition, another report by Maeli Business Newspaper highlights that Samsung Electronics and SK hynix also saw their sales in China double in the first half of this year.
Samsung’s Revenue from China Doubled in 1H24, Mainly Boosted by Semiconductors
Citing comments from Analysts, the report attributes China’s strong demand for Korean semiconductors to the country’s aggressive economic stimulus measures and the surge in AI, coinciding with the semiconductor upturn.
Citing Samsung’s semi-annual report on the 22nd, the report notes that its sales in China soared to KRW 32.3452 trillion (around USD 24.2 billion) in the first half of 2024, doubling from KRW 17.808 trillion in the first half of last year. According to Samsung’s website, China accounted for 17% of its revenue in the second quarter of 2024, rising from 11% in 2Q23.
The sales figures for China reported by Samsung encompass not only its flagship semiconductor products but also others like smartphones and home appliances. However, it is worth noting that unlike the situation in the U.S. and Europe, where the revenue structure is more diversified, semiconductors are believed to constitute the majority of sales in China, the report suggests.
HBM May Be a Major Contributor of South Korean Memory Giants’ Soaring Revenue in China
The soaring revenue in China echoes with the rumor that the U.S. is reportedly mulling new measures to limit China’s access to AI memory, an arena South Korean memory giants excel at. A previous report by Reuters noted that as the restrictions might be imposed as early as late August, Chinese tech giants like Huawei and Baidu, along with other startups, are said to be stockpiling high bandwidth memory (HBM) semiconductors from Samsung Electronics.
Citing a source from the semiconductor industry, Maeli states that the rapid growth of HBM is driving a significant shift in China’s DRAM market. The surging demand, derived from the need for server and enterprise PC upgrades as well as the launch of new AI-equipped PCs, appears to have boosted sales in China, benefiting South Korean memory giants.
The current HBM market leader, SK hynix, currently operates a DRAM plant in Wuxi, a packaging facility in Chongqing, and a NAND plant acquired from Intel in Dalian. Its sales in China in 1H24, according to the report, is estimated to amount to KRW 8.6061 trillion (around USD 6.4 billion), more than doubling its sales from the same period last year (KRW 3.8821 trillion).
The report, citing SK hynix’s semi-annual report, notes that the sales and net profit of SK hynix Semiconductor China in 1H24 were KRW 2.6624 trillion and KRW 119.4 billion, respectively. In the same period last year, it reported a loss of KRW 165.6 billion.
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(Photo credit: Samsung)
News
China’s GPU company Lisuan Technology, based in Shanghai, has averted the crisis of bankruptcy, as it secures around 328 million yuan (nearly USD 46 billion) in financing from domestic NAND/ DRAM manufacturer Dosilicon and others, according to a report by Chinese media outlet Sina.
On August 20th, Dosilicon made an announcement, stating that it plans to invest 200 million yuan of its own funds to increase the stake in Lisuan Tech. By subscribing to an additional 5 million yuan of Lisuan’s newly registered capital, the memory company will hold approximately 37.88% of Lisuan’s equity.
On the other hand, the report notes that other investors plan to inject a total of 128 million yuan to Lisuan, subscribing to a total of 3.2 million yuan in its newly added registered capital. In total, Lisuan Tech has received 328 million yuan in financing from Dosilicon and others.
Regarding the reasons behind the investment, the report indicates that there is a certain level of synergy between Dosilicon and its target company, Lisuan Tech. As Dosilicon has already established a portfolio of both standard and niche DRAM products, its R&D team can further engage in technical collaboration with the graphics rendering chip design team at Lisuan to enhance the design capabilities of both parties.
The report, citing public information, states that Lisuan Tech, with 20 years of experience in GPU development and design, is one of the few domestic companies in China capable of providing customized high-performance GPU solutions.
The firm’s first 6nm GPU, based on its self-developed ‘Pangu’ architecture, is ready for tape-out, the report suggests. The product even boasts to offer performance on par with NVIDIA’s high-end graphics cards.
However, due to delays in securing financing, the company has fallen into difficulties, with rumors circulating that it was facing bankruptcy.
According to the data cited by the report, in 2023, Lisuan had no revenue and a net loss of 145 million yuan. In the first half of 2024, it reported no revenue and a net loss of 97.9 million yuan. The bulk of the losses was said to stem from R&D investments.
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(Photo credit: Lisuan Tech)
Insights
According to TrendForce’s latest memory spot price trend report, regarding DRAM spot prices, though the top three DRAM suppliers have not lowered their official prices, spot prices could weaken further because buyers are more passive than before. On the other hand, the ample supply of reball DDR4 chips have also depressed the momentum for DDR4’s price hike. As for NAND flash, spot traders are depleting in anticipation on a revitalization of demand for 3Q24 having perceived the sluggishness from the contract market. Details are as follows:
DRAM Spot Price:
Continuing from last week, there has been no noticeable demand rebound in the spot market. Although the top three DRAM suppliers have not lowered their official prices, spot prices could weaken further because spot buyers are more passive than before, and the demand situation for consumer electronics has yet to experience a turnaround. It is worth noting that spot prices of DDR4 products have been rising by a smaller margin compared with spot prices of DDR5 products since the start of this year. Consequently, some module houses are showing willingness to restock DDR4 products. However, there is still ample supply of reball DDR4 chips, so spot prices of DDR4 products reveal no indication of hikes. The average spot price of the mainstream chips (i.e., DDR4 1Gx8 2666MT/s) dropped by 0.35% from US$1.985 last week to US$1.978 this week.
NAND Flash Spot Price:
Spot traders are depleting in anticipation on a revitalization of demand for 3Q24 having perceived the sluggishness from the contract market. Wafer prices have dropped compared to last week, which reflect how traders are hoping to minimize their losses from inventory by attempting to finalize transactions as soon as possible amidst pessimism. Spot prices of 512Gb TLC wafers have dropped by 1.15% this week, arriving at US$3.234.
News
After forming a new HBM development team within its Device Solutions (DS) Division around July, memory Giant Samsung is now said to have made progress on HBM4, targeting to tape-out the product by the end of this year, a report by TheElec notes. The move is also regarded to be laying the foundation stone for the mass production of its 12-layer HBM4 product by the end of 2025, according to the report.
The report suggests that as the time span between tape-out and finalizing test products might take three to fourth months, Samsung’s HBM4 test products are expected to be released next year at the earliest. Afterwards, Samsung would continue to make improvements until sending samples to key customers.
Samsung, however, declined to comment on its roadmap, according to TheElec.
The report by TheElec further notes that starting from HBM4, Samsung plans to mass-produce the logic die of HBM on its 4nm foundry process. Regarding the memory chip, Samsung is said to adopt the 10nm 6th-generation (1c) DRAM.
Samsung’s major HBM competitor, SK hynix, is reported to enter mass production for its 12-layer HBM4 in the second half of 2025, the report indicates. The company plans to mass-produce the logic die of HBM with TSMC’s 5nm and 12nm processes. As for the memory chip, it is still weighing between 1b DRAM and 1c DRAM.
As Samsung plans to use 1c DRAM in HBM4 core chips, related investments are expected to follow. TrendForce reports that Samsung’s P4L facility will be the key site for expanding memory capacity starting in 2025, starting with NAND production. Equipment installation for DRAM is expected to begin in mid-2025, with mass production of 1c nanometer DRAM slated to commence in 2026.
Samsung’s fifth generation HBM, HBM3e, is still striving on the certification process with NVIDIA. TrendForce notes that as the company is eager to gain higher HBM market share from SK hynix, its 1alpha(1α) capacity has reserved for HBM3e. TrendForce believes that Samsung is going to be a very important supplier on HBM category.
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(Photo credit: Samsung)