According to a report from South Korean media Maeil Business Newspaper, Samsung Electronics plans to raise prices for server DRAM and enterprise NAND flash by 15% to 20% in the third quarter due to surging demand for artificial intelligence (AI). This move is expected to improve the company’s performance in the second half of the year, while boosting momentum for some Taiwanese companies like Nanya Technology, ADATA, TeamGroup and Transcend in the coming quarters.

Industry sources cited by a report from Economic Daily News believe that with manufacturers defending prices, there is strong support for the market. Additionally, as the three major manufacturers focus on developing high-bandwidth memory (HBM), which limits the output of DDR4 and DDR3, it helps maintain a healthy state for the DRAM industry.

Per Maeil Business Newspaper, sources have revealed on June 26th that Samsung Electronics has recently notified major customers about the planned price increase. The Device Solutions (DS) division, responsible for Samsung’s semiconductor business, held a global strategy meeting at its Hwaseong plant in Gyeonggi-do on the same day, where this matter was discussed.

The report further stated that Samsung Electronics had already increased the prices of NAND flash supplied to enterprises by at least 20% in the second quarter, anticipating that the AI boom will drive higher server demand in the second half of the year.

According to data from DRAMeXchange, the global sales of enterprise NAND flash reached $3.758 billion in the first quarter of this year, marking a 62.9% increase from the previous quarter. With the rising demand, some products are experiencing shortages.

TrendForce also notes that with a slight improvement in server demand, Samsung has indicated it will adopt a more aggressive pricing strategy for server DRAM and enterprise SSDs for 3Q24 deals. TrendForce’s price projections posit that server DRAM prices are expected to increase by more than 10% QoQ, with enterprise SSDs enjoying a similar price range. However, due to sluggish smartphone demand, price increases in mobile categories are expected to be more modest.

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• [Insights] Memory Spot Price Update: DRAM Remains Weak Despite Samsung’s Capacity Shift to HBM
• [News] Memory Giants Samsung and Micron Rumored to Expand Production

(Photo credit: Samsung)

On June 26, American memory manufacturer Micron announced its financial results for the third quarter of the 2024 fiscal year (ending May 30, 2024) after the market closed: revenue increased by 82% year-over-year (17% quarter-over-quarter) to $6.811 billion; Non-GAAP diluted earnings per share (EPS) were reported at $0.62, better than the $0.42 of the second quarter of the 2024 fiscal year and the diluted loss per share of $1.43 in the third quarter of the 2023 fiscal year.

Micron further estimates that for the fourth quarter of the 2024 fiscal year, revenue and Non-GAAP diluted EPS will be $7.6 billion (plus or minus $200 million) and $1.08 (plus or minus $0.08), respectively.

Per a Bloomberg report on June 26th, some sources expect Micron’s fourth-quarter revenue to exceed USD 8 billion.

Micron CEO Sanjay Mehrotra stated in a press release that the improving market conditions and strong price and cost execution drove the financial outperformance. Reportedly, Micron’s total fiscal Q3 revenue was USD 6.8 billion, up 17% sequentially and up 82% year over year.

Mehrotra also noted that Micron’s market share for high-margin AI-related product categories such as HBM (high-bandwidth memory), high-capacity DIMMs and data center SSDs continue to rise. Meanwhile, Micron is also gaining share in data center SSD, reaching new revenue and market share records in this important product category.

Mehrotra stated during the earnings call that strong AI-driven demand for data center products has led to tight capacity for advanced processes. Therefore, despite steady recent demand for personal computers (PCs) and smartphones, Micron expects prices to continue rising throughout 2024 (January to December).

Micron CEO Sanjay Mehrotra further addressed, “In the data center, rapidly growing AI demand enabled us to grow our revenue by over 50% on a sequential basis.” He then pointed out, “…we can deliver a substantial revenue record in fiscal 2025, with significantly improved profitability underpinned by our ongoing portfolio shift to higher-margin products.”

Looking ahead to 2025, the growing demand for AI PCs, AI smartphones, and data center AI creates a favorable environment, giving Micron confidence in achieving substantial revenue records in the 2025 fiscal year. This is expected to significantly boost profitability as the product mix continues to shift towards higher-margin products.

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• [News] ASMPT Reportedly Provided Demo TC Bonder to Micron for HBM Production
• [News] Micron’s HBM Expansion at Full Throttle: Rumored to Expand in US, Malaysia Also an Option

(Photo credit: Micron)

AI applications is driving the memory market forward, with HBM (High Bandwidth Memory) undoubtedly being a sought-after product of the industry, attracting increased capital expenditure and production expansion from memory manufacturers. At the meantime, a new force in the memory market has quietly emerged: GDDR7 is expected to drive the memory market steadily forward as HBM amid the AI wave.

• The Differences between GDDR7 and HBM

GDDR7 and HBM both belong to the category of graphics DRAM with high bandwidth and high-speed data transmission capabilities, providing strong support for AI computing. However, GDDR7 and HBM differ slightly in terms of technology, application scenarios, and performance.

GDDR7 is the latest technology in the GDDR family primarily used to enhance the available bandwidth and memory capacity of GPU. In March 2024, JEDEC, the Solid State Technology Association, officially released the JESD239 GDDR7 standard, which significantly increases bandwidth, eventually reaching 192GB/s per equipment.

It can be calculated that the memory speed is 48Gbps, double that of GDDR6X, the number of independent channels double from 2 in GDDR6 to 4 in GDDR7, and it supports densities ranging from 16-32 Gbit, including support for 2-channel mode to double system capacity.

Additionally, JESD239 GDDR7 is the first JEDEC-standard DRAM to use a Pulse Amplitude Modulation (PAM) interface for high-frequency operation. Its PAM3 interface improves the signal-to-noise ratio (SNR) in high-frequency operations while improving energy efficiency.

GDDR7 is mainly applied in graphics processing, gaming, computing, networking, and AI, particularly in gaming, where its high bandwidth and high-speed data transmission capabilities can significantly improve frame smoothness and loading speed, enabling a better experience for game players. In the field of AI, GDDR7 boasts great potential, capable of supporting rapid data processing and computation for large AI models, thus speeding up model training and inference.

Michael Litt, chairman of the JEDEC GDDR Task Group, has stated that GDDR7 is the first to focus not only on bandwidth but also on integrating the latest data integrity features to meet the market demands for RAS (Reliability, Availability, and Serviceability). These features allow GDDR devices to better serve existing markets like cloud gaming and computing, and expand its presence to AI sector.

Based on memory stacking technology, HBM connects layers through Through-Silicon Via (TSV), and features high capacity, high bandwidth, low latency, and low power consumption. Its strength lies in breaking the memory bandwidth and power consumption bottleneck. Currently, HBM is mainly used in AI server and supercomputer applications.

Since the introduction of the first generation in 2013, HBM has developed the second generation (HBM2), third generation (HBM2E), fourth generation (HBM3), and fifth generation (HBM3E).

This year, HBM3e will be the mainstream in the market, with concentrated shipments expected in 2H24. Besides, the sixth generation HBM4 is anticipated to make its debut as early as 2025. Reportedly, HBM4 will bring revolutionary changes, adopting a 2048-bit memory interface, which theoretically can double the transmission speed again.

• Three Memory Giants Scramble for the Initiative in GDDR7 Market

Due to high technical barriers, HBM market share is firmly at the helm of the three major memory players: SK Hynix, Samsung, and Micron. With the ongoing influence of AI, their competition has been expanding from HBM to GDDR field.

Since the beginning of this year, the three manufacturers have successively announced the availability of GDDR7 memory samples. It’s expected that some of them will start mass production of GDDR7 between 4Q24 and 1Q25.

Photo credit: Samsung Electronics

In March, Samsung and SK Hynix announced their respective GDDR7 specifications. Samsung’s GDDR7 chip, using PAM3 signal for the first time, can achieve a speed of 32Gbps at a DRAM voltage of only 1.1V, exceeding the JEDEC GDDR7 specification of 1.2V.

SK Hynix’s latest GDDR7 product, compared to its predecessor GDDR6, offers a maximum bandwidth of 160GB/s, double that of the previous generation, with a 40% improvement in power efficiency and a 1.5 times increase in memory density.

In June, Micron announced it already begun sampling its new generation of GDDR7, achieving a speed of 32Gbps and a memory bandwidth of 1.5TB/sec, a 60% improvement over GDDR6, boasting the industry’s highest bit density. Micron’s GDDR7 utilizes 1β DRAM technology and an innovative architecture and has four independent channels to optimize workloads, offering faster response time, smoother gaming experience, and shorter processing time.

Additionally, Micron’s GDDR7 improves energy efficiency by 50% relative to GDDR6, which hence enhances thermal performance for portable devices (Like laptop) and extends battery lifespan. The new sleep mode can reduce standby power consumption by 70%. Micron claims its next-generation GDDR7 can deliver high performance, increasing throughput by 33% and reducing response time for generative AI workloads (Text and image creation included) by 20%.

Photo credit: Micron

Recently, rumor has it that NVIDIA RTX 50 series will fully adopt the latest GDDR7, with a maximum capacity of 16GB, including models GN22-X11 (16 GB GDDR7), GN22-X9 (16 GB GDDR7), GN22-X7 (12 GB GDDR7), GN22-X6 (8 GB GDDR7), GN22-X4 (8 GB GDDR7), and GN22-X2 (8 GB GDDR7). The industry believes that GDDR7 will become a new arena in the memory market following HBM, in which manufacturers will continue to battle for NVIDIA GPU orders.

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• [News] SK hynix to Kick off Mass Production for GDDR7 in Q4 2024
• [News] Micron Reportedly Targets 25% HBM Market Share by 2025

(Photo credit: Samsung Electronics)

According to TrendForce’s latest memory spot price trend report, the spot price of DRAM remains weak, as Samsung’s reallocation of its D1A process to the manufacturing of HBM products did little help. As for NAND flash, overall transactions are also sitting on the enervated end due to weakening market demand. Details are as follows:

DRAM Spot Price:

A fire-related incident occurred at Micron’s fab in Taichung on June 20th, but no actual losses (in bit terms) have been reported. In response to this event, module houses did temporarily suspend quoting, but they soon resumed trading activities. Overall, the event has had no positive effect on the spot price trend, which remains relatively weak. Similar to last week, spot trading has been fairly tepid, and prices of DDR4 products have fallen more significantly compared to DDR5 products. With Samsung reallocating its D1A process to the manufacturing of HBM products, spot prices of DDR5 products have actually experienced sporadic hikes for a while. Mainstream die DDR4 1Gx8 2666 MT/s saw a price increase of 1.36% this week (US$1.835 to US$1.860).

NAND Flash Spot Price:

Module houses have started adopting even more aggressive pricing strategies to effectively control their inventory, though overall transactions are sitting on the enervated end due to weakening market demand. TrendForce believes that inventory pressure would continue to bring down spot prices, which dropped to US$3.302 for 512Gb TLC wafers this week at a 0.21% reduction.

Driven by memory giants ramping up high-bandwidth memory (HBM) production, according to a report from Korean media outlet TheElec, ASMPT, a back-end equipment maker, has supplied a demo thermal compression (TC) bonder for Micron’s HBM production.

TC bonders play a pivotal role in HBM production by employing thermal compression to bond and stack chips on processed wafers, thereby significantly influencing HBM yield.

ASMPT is reportedly collaborating with the US memory giant to co-develop a TC bonder for use in HBM4 production. Notably, ASMPT has supplied TC bonders to SK Hynix as well and plans to deliver more units later in the year.

Micron is also procuring TC bonders from Shinkawa and Hanmi Semiconductor for the production of HBM3e. However, as per the same report citing sources, Shinkawa has its handful in supplying the bonders to its largest customer, so Micron added Hanmi Semiconductor as a secondary supplier.

In addition to Micron, Samsung Electronics and SK Hynix have developed distinct supply chains for TC bonders. Samsung sources its equipment from Japan’s Toray and Sinkawa, as well as its subsidiary SEMES. In contrast, SK Hynix relies on Singapore’s ASMPT, HANMI Semiconductor, and Hanhwa Precision Machinery.

According to industry sources cited by The Chosun Daily, TC bonder orders driven by memory giants have been strong, as Samsung Electronics’ subsidiary SEMES has delivered nearly 100 TC bonders over the past year. Meanwhile, SK Hynix has inked a approximately $107.98 million contract with HANMI Semiconductor, which commands a 65% share of the TC bonder market.

Regarding the latest developments in HBM, TrendForce indicates that HBM3e will become the market mainstream this year, with shipments concentrated in the second half of the year. Currently, SK hynix remains the primary supplier, along with Micron, both utilizing 1beta nm processes and already shipping to NVIDIA.

According to TrendForce predictions, the annual growth rate of HBM demand will approach 200% in 2024 and is expected to double in 2025.

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• [News] Rising HBM Production by Samsung and SK Hynix Energizes Korea’s TC Bonder Industry
• [News] Micron’s HBM Expansion at Full Throttle: Rumored to Expand in US, Malaysia Also an Option

(Photo credit: Micron)