In the latest financial report and guidance released on the 20th, U.S. memory chip giant Micron outperformed analysts’ expectations for both the last quarter and the current quarter. CEO Sanjay Mehrotra believes that product pricing will rebound next year, with the upward trend continuing until 2025, as Micron aims to return to a path of operational innovation and reach new record levels by 2025, according to The Economic Daily.

Mehrotra anticipates a price recovery in memory prices next year, and rise further in 2025. He reiterated in a statement that 2024 will be a year of recovery for the memory industry setting the stage for record results in 2025.

Micron expects the supply of PC, mobile devices, and other chips to approach normal levels in the first half of next year. Despite two consecutive years of declining PC shipments, Micron forecasts low to mid-single-digit percentage growth in 2024, with signs of a recovery in smartphone demand.

TrendForce also anticipates that the upward momentum in DRAM products is expected to continue until 2025.

The reason behind this is the continuous benefit to the DRAM market from the increasing penetration of premium products such as HBM, DDR5 and LPDDR5. This is expected to have a positive impact on the overall memory prices.

Simultaneously, TrendForce believes that 2025 will witness the emergence of more edge AI applications, such as AI on smartphones or PCs. This is expected to result in an increase in DRAM capacity, becoming the driving force for the next wave of growth in DRAM demand.

(Image: Micron)

Amid a gradual recovery in the memory market, South Korean memory giants Samsung and SK Hynix are reportedly set to expand their equipment investments significantly next year.

Samsung aims for a 25% increase in investment, while SK Hynix plans to more than double its investment compared to this year, concurrently increasing production capacity, sparking industry attention.

According to South Korean media outlet ETNEWS, both Samsung and SK Hynix are planning to boost semiconductor equipment investments in 2024. Samsung’s investment is estimated at around KRW 27 trillion (approximately USD 20.78 billion), representing a 25% growth, while SK Hynix plans an investment of around KRW 5.3 trillion (approximately USD 4.07 billion), signaling a 100% increase from this year’s investment.

As ETNEWS’ report revealed, in addition to increasing equipment investment, Samsung and SK Hynix have also raised their production capacity targets for 2024. Samsung plans to expand both DRAM and NAND Flash production by approximately 24%, while SK Hynix aims to elevate DRAM output to levels seen by the end of 2022.

Looking at market share, according to TrendForce’s released data, in terms of third-quarter revenue figures, Samsung holds approximately 38.9% market share in DRAM, while SK Hynix stands at 34.3%.

In the NAND segment, Samsung holds approximately 31.4% market share, while SK Hynix stands at 20.2%.

Market concerns arise as the memory industry, which has recently seen relief from the long-standing oversupply pressure due to major manufacturers reducing production, faces the possibility of disruption once again. Amid the rebound in prices, the significant investments planned by the two major South Korean companies are causing apprehension that the memory industry may face new challenges.

Memory industry sources believe that despite Samsung and SK Hynix’s plans to increase semiconductor equipment investment and boost production capacity in 2024, the tool-in still take time. Improving production capacity utilization is not an instantaneous process.

Furthermore, there is a general consensus in the industry that several AI-related applications in the future will require large-capacity memory support. For instance, the expected 3% growth in global smartphone shipments (based on TrendForce’s report) next year is anticipated to contribute to the expansion of demand in the high-value memory market.

TrendForce also pointed out that recent news about memory manufacturers expanding investment and increasing production capacity is primarily driven by the growing demand in the HBM market, rather than capacity expansion for all products.

Read more

• NAND Flash Industry Revenue Grows 2.9% in 3Q23, Expected to Surge Over 20% in Q4, Says TrendForce
• Contract Prices Bottom Out in Q3, Reigniting Buyer Momentum and Boosting DRAM Revenue by Nearly 20%, Says TrendForce

(Photo credit: Samsung)

Affected by the year-end and relatively sluggish demand, spot prices of DRAM and NAND Flash have shown a hovering trend this week. Details are as follows:

DRAM Spot Market:

With the year ending, some DRAM suppliers have released more their existing stocks into the spot market in order to lower their inventories further. As a result, spot prices of DRAM chips on the whole have fallen slightly. Currently, spot prices are still mostly hovering because buyers have yet to increase procurement quantities despite the rally of contract prices. The average spot price of the mainstream chips (i.e., DDR4 1Gx8 2666MT/s) rose by 0.11% from US$1.745 last week to US$1.747 this week.

NAND Flash Spot Market:

The spot market, bearing resemblances to that of DRAM, lacks drivers for a continuous increase in prices due to buyers’ stagnated purchase sentiment at the end of the year. Fortunately, the market is currently at a price correction phase as provision remains exceedingly restricted among suppliers due to their unchanged reluctance in sales. 512Gb TLC wafer spots have risen by 1.62% this week, arriving at US$3.075.

Market reports suggest Nvidia’s new product release cycle has shortened from two to a year, sparking intense competition among major memory companies in the realm of next-gen High Bandwidth Memory (HBM) technology. Samsung, SK Hynix, and Micron are fervently competing, with SK Hynix currently holding the dominant position in the HBM market. However, Micron and Samsung are strategically positioned, poised for a potential overtake, reported by TechNews.

Current Status of the HBM Industry

SK Hynix made a breakthrough in 2013 by successfully developing and mass-producing HBM using the Through Silicon Via (TSV) architecture. In 2019, they achieved success with HBM2E, maintaining the overwhelming advantage in the HBM market. According to the latest research from TrendForce, Nvidia plan to partner with more HBM suppliers. Samsung, as one of the suppliers, its HBM3 (24GB) is anticipated to complete verification with NVIDIA by December this year.

Regarding HBM3e progress, Micron, SK Hynix, and Samsung provided 8-layer (24GB) Nvidia samples in July, August, and October, respectively, with the fastest verification expected by year-end. All three major players anticipate completing verification in the first quarter of 2024.

As for HBM4, the earliest launch is expected in 2026, with a stack increase to 16 layers from the existing 12 layers. The memory stack will likely adopt a 2048-bit memory stack connection interface, driving demand for the new “Hybrid Bonding” stacking method. The 12-layer HBM4 product is set to launch in 2026, followed by the 16-layer product expected in 2027.

Navigating HBM4, the New Technologies and Roadmaps of Memory Industry Leaders

SK Hynix

According to reports from Business Korea, SK Hynix is preparing to adopt “2.5D Fan-Out” packaging for the next-generation HBM technology. This move aims to enhance performance and reduce packaging costs. This technology, not previously used in the memory industry but common in advanced semiconductor manufacturing, is seen as having the potential to “completely change the semiconductor and foundry industry.” SK Hynix plans to unveil research results using this packaging method as early as next year.

The 2.5D Fan-Out packaging technique involves arranging two DRAM horizontally and assembling them similar to regular chips. The absence of a substrate beneath the chips allows for thinner chips, significantly reducing the thickness when installed in IT equipment. Simultaneously, this technique bypasses the Through Silicon Via (TSV) process, providing more Input/Output (I/O) options and lowering costs. 

According to their previous plan, SK Hynix aims to mass-produce the sixth-generation HBM (HBM4) as early as 2026. The company is also actively researching “Hybrid Bonding” technology, likely to be applied to HBM4 products.

Currently, HBM stacks are placed on the interposer next to or GPUs and are connected to their interposer. While SK Hynix’s new goal is to eliminate the interposer completely, placing HBM4 directly on GPUs from companies like Nvidia and AMD, with TSMC as the preferred foundry.

Samsung

Samsung is researching the application of photonics in HBM technology’s interposer layer, aiming to address challenges related to heat and transistor density. Yan Li, Principal Engineer in Samsung’s advanced packaging team, shared insights at the OCP Global Summit in October 2023.

(Image: Samsung)

According to Samsung, The industry has made significant strides in integrating photonics with HBM through two main approaches. One involves placing a photonics interposer between the bottom packaging layer and the top layer containing GPU and HBM, acting as a communication layer. However, this method is costly, requiring an interposer and photon I/O for logic chips and HBM.

(Image: Samsung)

The alternative approach separates the HBM memory module from packaging, directly connecting it to the processor using photonics. Rather than dealing with the complexity of packaging, a more efficient approach is to separate the HBM memory module from the chip itself and connect it to the logic IC using photonics technology. This approach not only simplifies the manufacturing and packaging costs for HBM and logic ICs but also eliminates the need for internal digital-to-optical conversions in the circuitry. However, careful attention is required to address heat dissipation.

Micron

As reported by Tom’s Hardware, Micron’s 8-layer HBM3e (24GB) is expected to launch in early 2024, contributing to improved AI training and inference performance. The 12-layer HBM3e (36GB) chip is expected to debut in 2025.

Micron is working on HBM4 and HBM4e along with other companies. The required bandwidth is expected to exceed 1.5 TB/s. Micron anticipates launching 12-layer and 16-layer HBM4 with capacities of 36GB to 48GB between 2026 and 2027. After 2028, HBM4E will be introduced, pushing the maximum bandwidth beyond 2+ TB/s and increasing stack capacity to 48GB to 64GB.

Micron is taking a different approach from Samsung and SK Hynix by not integrating HBM and logic chips into a single die, suggested by Chinese media Semiconductor Industry Observation. This difference in strategy may lead to distinct technical paths, and Micron might advise Nvidia, Intel, AMD that relying solely on the same company’s chip carries greater risks.

(Image: Micron)

TSMC Aids Memory Stacking       

Currently, TSMC 3DFabric Alliance closely collaborates with major memory partners, including Micron, Samsung, and SK Hynix. This collaboration ensures the rapid growth of HBM3 and HBM3e, as well as the packaging of 12-layer HBM3/HBM3e, by providing more memory capacity to promote the development of generative AI.

(Image: TSMC)

(Image: SK Hynix)

Explore more

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• [News] SK Hynix Signs Prioritized Supply Agreement with NVIDIA for HBM3e, 2023 Q4 Revenue Expected to Surpass KRW 10 Trillion Again
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Compared to last week, there is no notable change in DRAM spot price. It is relatively stable in this week. On NAND Flash, there was a 20%+ growth in NAND Flash wafer contract prices last month, making buyers stock and sellers negotiate the price. It leads a surge in the NAND flash wafer spot price in this week.

DRAM Spot Market

The spot market has not changed noticeably from the previous week, and prices are starting to weaken as more used DDR4 chips are released into the market. Kingston has yet to adjust its module prices, so other module houses are hesitant to raise their prices as well. On the whole, the spot market remains fairly quiet in terms of trading activities, and the general price trend there is relatively flat. The average spot price of the mainstream chips (i.e., DDR4 1Gx8 2666MT/s) rose by 0.99% from US$1.712 last week to US$1.729 this week.

NAND Flash Spot Market

Overall retail sales of NAND Flash have yet to surpass performance of past years, though the growth of more than 20% in contract prices for Flash wafers during November that stimulated aggressive stocking activities among buyers had led to a more adamant approach in sellers’ negotiations, and had prompted 512Gb to surpass US$3 on a continual basis. 512Gb TLC wafer spots have risen by 5.35% this week, arriving at US$3.015.