SK hynix today reported the financial results for the third quarter ended September 30, 2023. The company recorded revenues of 9.066 trillion won, operating losses of 1.792 trillion won and net losses of 2.185 trillion won in the three-month period. The operating and net margins were a negative 20% and 24%, respectively.

After bottoming out in the first quarter, the business has been on a steady recovery track, helped by growing demand for products such as high-performance memory chips, the company said.

“Revenues grew 24%, while operating losses narrowed 38%, compared with the previous quarter, thanks to strong demand for high-performance mobile flagship products and HBM3, a key product for AI applications, and high-capacity DDR5,” the company said, adding that a turnaround of the DRAM business following two quarters of losses is particularly hopeful.

SK hynix attributed the growth in sales to increased shipments of both DRAM and NAND and a rise in the average selling price.

By products, shipments of DRAM increased 20% from the three months earlier, thanks to strong sales of high-performance products for server applications such as the AI with the average selling price also recording a 10% rise. Shipments of NAND also rose with high-capacity mobile products and solid state drive products taking the lead.

Following a turnaround, an improvement in the DRAM business is forecast to gain speed, backed by popularity of the generative AI technology, while there are looming signs of a steady recovery in the NAND space as well.

With the effect of the production reduction by global memory providers starting to be seen and customers, following efforts to reduce inventories, placing new orders now, semiconductor prices are starting to stabilize, the company said.

To meet new demands, SK hynix plans to increase investments in high-value flagship products such as HBM, DDR5, and LPDDR5. The company will increase the share of the products manufactured from the 1anm and 1bnm, the fourth and the fifth generations of the 10nm process, respectively, while increasing investments in HBM and TSV.

(Image: SK hynix)

DRAM Spot Market

The price trend in the spot market has diverged slightly compared with the price trend in the contract price. Spot prices of DRAM chips and modules rose successively over the previous several weeks. However, the upward momentum has lost steam in recent days due to a lack of channel demand. In the case of module house Kingston, it currently holds a high level of DRAM inventory, so its pricing strategy is more conservative compared with other module houses. Also, since Kingston is the leading module house, spot prices of modules on the whole are constrained from climbing further. For now, buyers and sellers in the spot market are taking a wait-and-see approach. The trajectory of spot prices is expected to become clearer following the finalization of prices for 4Q23 contracts. The average spot price of mainstream chips (i.e., DDR4 1Gx8 2666MT/s) rose by 0.71% from US$1.560 last week to US$1.571 this week.

NAND Flash Spot Market

Spot transactions have slightly shrunken recently under insufficient stocks on account of the drastically diminished level of wafer provision from suppliers. On the other hand, buyers who are suppressed in their sentiment of following up with prices, due to the accumulated increment that is already quite significant within the short term, have been relatively restricted in the increase of concluded prices, despite maintaining an upward trend. 512Gb TLC wafer spots have climbed 5.85% this week, arriving at US$2.044.

As the leading global supplier of NAND memory, Samsung is embarking on an ambitious journey to enhance its V-NAND technology, also known as 3D NAND. Early in this week, Samsung has officially declared its commitment to commence mass production of the 9th generation V-NAND memory, featuring an astonishing 300+ layers, by 2024. This achievement will establish a new industry record for the highest number of active layers, solidifying Samsung’s industry leadership.

In a blog post on Samsung Electronics, Jung-Bae Lee, President and Head of Samsung Electronics’ Memory Business, stated, “The ninth-generation V-NAND is well under way for mass production early next year with the industry’s highest layer count based on a double-stack structure.”

Samsung was diligently working on the 9th generation V-NAND back in August this year, preserving the double-stacked technology they first introduced in 2020. Not only is Samsung confirming the trajectory of their next-gen non-volatile memory technology, but it also surpasses competitors by boasting more active layers. It’s been disclosed that SK Hynix’s upcoming 3D NAND will have 321 active layers, Samsung is set to surpass this number.

Jung-Bae Lee further elaborated, “Samsung is also working on the next generation of value-creating technologies, including a new structure that maximizes V-NAND’s input/output (I/O) speed.”

While precise performance details of Samsung’s 9th generation V-NAND remain undisclosed, it will power their upcoming SSDs. In the near future, it is anticipated that Samsung will introduce retail SSDs with the PCIe Gen5 interface, in line with the Samsung 990 Pro series.

Regarding long-term technological advancement, Samsung is committed to minimizing interference between units, reducing device dimensions, and maximizing the count of vertical layers. These innovative strides are clearing the path for Samsung to achieve the industry’s most compact unit size. These endeavors will propel Samsung toward their ambitious goal of developing over 1,000 layers of 3D NAND and distinctive memory solutions, ensuring the continued relevance of their products for data centers, personal computers, and a wide range of applications.

(Image: Samsung)

Read more:

• Memory Spot Price Updates: DRAM and NAND Flash Prices Soaring at Relatively High Levels
• NAND Flash Spot Prices Surge, DRAM Demand Stalls, Spot Prices Remain Volatile in Late September

Is the merger between NAND flash memory chipmakers Kioxia and Western Digital (WD) , which was expected to be finalized this month, facing a twist? According to media reports, South Korean memory giant SK Hynix is opposing this merger and is considering a collaboration with Japan’s SoftBank to invest in Kioxia.

As reported by Yomiuri Shimbun on the 18th, insiders reveal that the merger negotiations between Kioxia and WD might be at an impasse. Although both sides aimed to reach a merger agreement this month, SK Hynix, which plans to indirectly invest in Kioxia, doesn’t concur with the merger. In anticipation of negotiations collapsing, SK Hynix considers partnering with SoftBank to invest in Kioxia.

Kioxia, a spin-off from Toshiba’s memory business, was sold in 2018 to a Bain-Capital-lead consortium, including SK Hynix, and Hoya. At that time, regulations stipulated that the largest shareholder, Bain, must secure the consent of contributors like SK Hynix to promote this merger. It’s reported that SK Hynix is apprehensive that WD’s dominance will increase in this merger.

Reports suggest that SoftBank is currently bolstering its AI-related ventures. Therefore, by investing and enhancing relationships, SoftBank may secure a stable memory supply from Kioxia and SK Hynix.

Throne Shift for memory business? Mergers May Reshape Rankings

Nikkei reported on the 17th that SK Hynix does not approve of the Kioxia and WD merger. At this stage, SoftBank is not directly involved in the merger talks between Kioxia and WD. Kioxia and WD aim to secure a financing agreement with financial institutions this week to facilitate the merger. However, the lack of consent from SK Hynix may impact negotiations with financial institutions.

The report points out that in the NAND flash market, SK Hynix is the world’s second-largest manufacturer, trailing only Samsung. If Kioxia, the world’s third-largest manufacturer, and WD, the fourth-largest, were to merge, they would nearly match Samsung’s scale. This would create a significant gap between SK Hynix, which holds the third position, and raise concerns for SK Hynix.

Toshiba, currently holding approximately 40% of Kioxia, will also become a shareholder in the holding company, with Kioxia’s President, Nobuo Hayasaka, assuming the role of President for the holding company. Additionally, Kioxia will have the majority of seats on the board, granting substantial operational authority

According to data from TrendForce, In Q2 2023, Samsung leads the NAND memory market with 31.1% market share, while Kioxia holds 19.6%, and Western Digital has 14.7%. After the Kioxia-WD merger, their combined market share could exceed 34.3%, establishing them as the dominant force in the NAND memory market.

Explore more

• [News] Updates: Kioxia and Western Digital’s NAND Flash Progress towards Merger
• Q2 NAND Flash Revenue Up 7.4%, Anticipated to Exceed 3% Growth in Q3, Says TrendForce

(Image: SK Hynix )

DRAM Spot Market:

Even though the National Day holiday period has ended in China, the situation in the spot market is similar to that in the contract market. Specifically, spot trading has slightly declined due to insufficient actual demand. However, spot prices remain relatively high despite the lack of procurement activities. This is because sellers have not been actively offering price concessions to stimulate sales. The average spot price of mainstream chips (i.e., DDR4 1Gx8 2666MT/s) rose by 1.96% from US$1.533 last week to US$1.563 this week.

NAND Flash Spot Market:

Spot buyers are carrying on with their enlarged replenishment of inventory as buyers are generally dedicated to dropping wafer provision. With that being said, spot price for 512Gb that has now risen to US$2 has somewhat slowed down the speed of price increment, which led to a price consolidation this week. 512Gb TLC wafer spots have dropped by 0.21% this week, arriving at US$1.931.