According to TrendForce’s latest memory spot price trend report, neither did the DRAM nor NAND spot prices sees much momentum. DDR5 products are relatively stable, while the spot prices of DDR4 products continue to fall gradually due to high inventory levels. As for NAND flash, the spot market saw no apparent changes from last week at a restricted level of transactions also due to sufficient inventory. Details are as follows:

DRAM Spot Price:

The market has not shown notable changes in terms of momentum, and spot prices of DDR5 products are relatively stable. As for DDR4 products, spot prices continue to fall gradually due to high inventory levels. Overall, spot trading is quite limited in terms of volume due to the constraint imposed by weak consumer demand. The average spot price of the mainstream chips (i.e., DDR4 1Gx8 2666MT/s) dropped by 0.10% from US$1.991 last week to US$1.989 this week.

NAND Flash Spot Price:

The spot market saw no apparent changes from last week at a restricted level of transactions also due to sufficient inventory. Spot prices of 512Gb TLC wafers have risen by 1.17% this week, arriving at US$3.291.

As the battle of HBM intensifies between memory giants, the competition of NAND is also heating up. According to a report by Korean media outlet etnews, SK hynix is developing 400-layer NAND flash memory, aiming to get the technology ready for mass production by the end of 2025.

Citing sources familiar with the matter, the report notes that SK hynix is currently working with supply chain partners to develop process technologies and equipment needed for 400-layer and above NANDs. As the company plans to apply hybrid bonding to achieve the breakthrough, many packaging materials and components suppliers are expected to enter the new supply chain.

According to the report, SK hynix is reviewing new materials for bonding and various technologies for connecting different wafers, including polishing, etching, deposition, and wiring. With the goal of getting the technology and infrastructure ready by the end of next year, full-scale production for the 400-layer NAND is anticipated to begin in the first half of 2026.

Currently, the Big Three in the memory sector are all trying to push the boundaries on the layers of NAND. Earlier in April, Samsung confirmed that it has begun mass production for its one-terabit (Tb) triple-level cell (TLC) 9th-generation vertical NAND (V-NAND), with the number of layers reaching 290. For now, the company aims to stack V-NAND to over 1000 layers by 2030.

Micron, on the other hand, has announced the 2650 client SSD, its first product built from 276-layer 3D NAND on July 30^th. Japanese memory chipmaker Kioxia, after successfully increasing the number of 3D NAND layers to 218 in 2023, even stated that achieving a 1,000-layer level by 2027 would be possible.

In August, 2023, SK hynix showcased its sample of the world’s first 321-layer NAND product. Now, as the limit is expected to be pushed up to 400 layers, the company plans to apply hybrid bonding to the manufacturing, which adopts a “wafer-to-wafer” (W2W) structure, etnews notes.

According to the report, until now, SK hynix has been stacking cells on top of the peripherals, the driving circuit area, using the method of “Peripheral Under Cell (PUC)” to manufacture NAND. The structure is similar to a mixed-use high-rise apartment where the peripheral (commercial space) is at the bottom and the cells (residential units) are stacked on top.

However, as the number of NAND layers increases, the peripheral is prone to be damaged during the cell stacking process due to the high heat and pressure generated during the cell process, the report explains.

Therefore, SK hynix plans to apply hybrid bonding to overcome the issues. By implementing cells and peripherals on separate wafers and then bonding the two wafers together, the method allows the peripheral wafer that drive the cells to be separately manufactured, thus enabling a stable increase in NAND layers.

Regarding the progress on the development of 400-layer NAND, SK hynix stated that it cannot confirm details about its technology development or mass production timeline, the report notes.

Read more

• [News] SK Hynix Plans to Manufacture 3D NAND over 400 Layers at -70°C with the Help of TEL
• [News] Outpacing Samsung or the End of Race? Kioxia Aims 1000-layer NAND by 2027

(Photo credit: SK hynix)

Japanese NAND flash giant Kioxia announced today (August 1st) that the building construction of Fab2 (K2) of its Kitakami Plant in Iwate Prefecture was completed in July. As demand is recovering, the company will gradually make capital investments while closely monitoring flash memory market trends. Kioxia plans to start operation at K2 in the fall of Calendar Year 2025, according to its press release.

A portion of investment for K2 will be subsidized by the Japanese government according to the plan approved in February 2024, according to Kioxia.

In addition, the company notes that some administration and engineering departments will move into a new administration building located adjacent to K2 beginning in November 2024 to oversee the operation of K2.

According to a report from Nikkei on July 31, Kioxia’s Kitakami Plant started production in 2020,with the construction of K2 began in 2022. Initially, K2 was scheduled to commence production in 2023.

However, due to a downturn in the memory market and weak demand for NAND Flash used in smartphones and PCs, Kioxia started to reduce production in October 2022, with the extent of production cuts exceeding 30%. As part of these production reduction measures, Kioxia postponed the production start of the K2 facility.

Nikkei’s report further indicates that with market conditions recovering, Kioxia ended its production cuts in June 2024, and the current production line utilization rate has returned to 100%.

To mass-produce advanced memory products, Kioxia, in collaboration with Western Digital (WD), plans to invest a total of 729 billion yen in the Yokkaichi and Kitakami plants, with the Japanese government providing up to 243 billion yen in subsidies.

The Kitakami plant will produce the most advanced “8th generation” memory, with a monthly production capacity of 25,000 wafers. These will be used in AI data centers, as well as in smartphones, PCs, and automotive applications.

On June 26, according to industry sources cited in a report from Reuters, Kioxia plans to submit an initial public offering (IPO) application to the Tokyo Stock Exchange in the near future, aiming to go public by the end of October. Sources indicate that Kioxia will submit its official IPO application by the end of August, with a target listing date at the end of October.

Read more

• [News] NAND Flash Giant Kioxia Reportedly Plans IPO by Late October amid Market Recovery
• [News] Kioxia Optimistic about NAND Market Sentiment; Price Hike Expected in Q2

(Photo credit: Kioxia)

According to TrendForce’s latest memory spot price trend report, neither did the DRAM nor NAND spot prices sees much momentum last week. Spot prices of DDR4 and DDR5 products didn’t show significant fluctuations as the market has not seen a demand uptick. As for NAND flash, the wave of stocking demand during July in response with the peak season in the third quarter of each year didn’t appear. Details are as follows:

DRAM Spot Price:

In the spot market, the overall trading volume has fallen further because the demand for consumer electronics has yet to rebound, and Taiwan’s spot trading was suspended for two days (from July 24th to 25th) due to a typhoon. The spot market as a whole has not seen a demand uptick compared to the previous week, and buyers are mostly waiting for further developments. Consequently, spot prices of DDR4 and DDR5 products have not shown significant fluctuations. The average spot price of the mainstream chips (i.e., DDR4 1Gx8 2666MT/s) dropped by 0.35% from US$2 last week to US$1.993 this week.

NAND Flash Spot Price:

The spot market would usually generate a wave of stocking demand during July in response with the peak season in the third quarter of each year, but has been rather sluggish this year due to the sufficient extent of inventory among end clients, as well as enervated market demand. A small number of spot traders were attempting to lower their quotations tentatively last week in the hope of revitalizing buyers’ demand, which was proven to be quite ineffective. Generally speaking, recent spot market prices have been somewhat lethargic alongside a continuous shrinkage of transactions. Spot price of 512Gb TLC wafers remains unchanged this week at US$3.253.

Samsung Electronics announced its financial results for the second quarter today (July 31st), posting KRW 74.07 trillion in consolidated revenue and operating profit of KRW 10.44 trillion (approximately USD 7.5 billion). The memory giant’s strong performance can be contributed to favorable memory market conditions, which drove higher average sales price (ASP), while robust sales of OLED panels also contributed to the results, according to its press release.

In early July, the company estimated a 15-fold increase YoY in second-quarter operating profit, which was expected to jump 1,452 per cent to KRW 10.4 trillion in preliminary numbers for the April-June quarter, the highest since the third quarter of 2022. The actual results are in line with its earlier projection.

Samsung’s DS Division posted KRW 28.56 trillion in consolidated revenue and KRW 6.45 trillion in operating profit for the second quarter, posting a 23.4% and 2377% QoQ growth, respectively.

Strong Demand for HBM, DDR5 and Server SSDs to Extend in Second Half on AI Applications

Regarding current market conditions, Samsung notes that driven by the strong demand for HBM as well as conventional DRAM and server SSDs, the memory market as a whole continued its recovery. This increased demand is a result of the continued AI investments by cloud service providers and growing demand for AI from businesses for their on-premise servers.

However, Samsung observes that PC demand was relatively weak, while demand for mobile products remained solid on the back of increased orders from Chinese original equipment manufacturer (OEM) customers. Demand from server applications continued to be robust.

Samsung projects that in the second half of 2024, AI servers are expected to take up a larger portion of the market as major cloud service providers and enterprises expand their AI investments. As AI servers equipped with HBM also feature high content-per-box with regards to conventional DRAM and SSDs, demand is expected to remain strong across the board from HBM and DDR5 to server SSDs.

In response to the heating market demand, Samsung plans to actively expand capacity to increase the portion of HBM3e sales. High-density products will be another major focus, such as server modules based on the 1b-nm 32Gb DDR5 in server DRAM.

Samsung has already taken a big leap on HBM as its HBM3 chips are said to have been cleared by NVIDIA last week, which will initially be used exclusively in the AI giant’s H20, a less advanced GPU tailored for the Chinese market.

For NAND, the company plans to increase sales by strengthening the supply of triple-level cell (TLC) SSDs, which are still a majority portion of AI demand, and will address customer demand for quad-level cell (QLC) products, which are optimized for all applications, including server PC and mobile.

The ramping of HBM and server DRAM production and sales is likely to further constrain conventional bit supply in both DRAM and NAND, Samsung notes.

Read more

• [News] Samsung Anticipates Q2 Profit to Soar on AI Demand with a 15-fold Increase
• [News] Samsung’s HBM3e Rumored to be Certified by NVIDIA, Boosting DDR5 Price Increases in Q3