STMicroelectronics, following its EUR 7.5 billion wafer fab project with GlobalFoundries in Crolles, France. is set to invest EUR 5 billion in building a new SiC super semiconductor wafer fab in Catania, Sicily, Italy. The fab in Italy will specialize in producing SiC chips, a pivotal technology for electric vehicles with substantial growth potential, according to French media L’Usine Nouvelle on November 26th,

STMicroelectronics competitively plans to transition to 8-inch wafers starting from 2024. The company will integrate Soitec’s SmartSiC technology to enhance efficiency and reduce carbon emissions. Simultaneously, STMicroelectronics aims to increase capacity, achieve internal manufacturing, and collaborate with Chinese firm Sanan Optoelectronics to raise SiC chip-related revenue from the expected USD 1.2 billion in 2023 to USD 5 billion by 2030.

On June 7th earlier this year, STMicroelectronics and Sanan Optoelectronics announced a joint venture to establish a new 8-inch SiC device fab in Chongqing, China, with an anticipated total investment of USD 3.2 billion.

To ensure the successful implementation of this extensive investment plan, Sanan Optoelectronics said to utilize its self-developed SiC substrate process to construct and operate a new 8-inch SiC substrate fab independently.

TrendForce: over 90% SiC market share by major global players        

According to TrendForce, the SiC industry is currently dominated by 6-inch substrates, holding up to 80% market share, while 8-inch substrates only account for 1%. Transitioning to larger 8-inch substrates is a key strategy for further reducing SiC device costs.

8-inch SiC substrates offer significant cost advantages than 6-inch substrates. The industry’s major players in China, including SEMISiC, Jingsheng Mechanical & Electrical Co., Ltd. (JSG), Summit Crystal, Synlight Semiconductor, KY Semiconductor, and IV-SemiteC, are advancing the development of 8-inch SiC substrates. This shift from the approximately 45% of total production costs associated with substrates is expected to facilitate the broader adoption of SiC devices and create a positive cycle for major companies.

Not only Chinese companies but also international semiconductor giants like Infineon Technologies and Onsemi are actively vying for a share of the market. Infineon has already prepared the first batch of 8-inch wafer samples in its fab and plans to convert them into electronic samples soon, with mass production applications scheduled before 2030. International device companies like Onsemi and ROHM have also outlined development plans for 8-inch SiC wafers.

Currently, major companies hold over 90% of the market share, intensifying competition. A slowdown in progress could provide opportunities for followers. According to TrendForce, the market share of the top 5 SiC power semiconductor players in 2022 was dominated by STMicroelectronics (36.5%), Infineon (17.9%), Wolfspeed (16.3%), Onsemi (11.6%), and ROHM (8.1%), leaving the remaining companies with only 9.6%.

(Image: STMicroelectronics)

Explore More

• [News] China Jingsheng Launches 2.1 Billion CNY SiC Substrate Project Marks Significant Investment
• [News] ROHM’s First SiC Substrate Production in Japan, 8-Inch Substrates Set for 2024
• [In-Depth Analyses] China Advances to 8-Inch SiC Substrates in 2023
• [News] GlobalWafers Plans 8-Inch SiC Production Next Year and Growth for 2025

According to the Economic Daily News’ report, industry sources indicate that Samsung, a major supplier of CIS, has issued a price increase notice to customers on November 29th, projecting an average price increase of up to 25% in the first quarter of next year.

The individual product lines may see an even higher increase, reaching levels of up to 30%, primarily in specifications with 32 million pixels and above. This suggests that the CIS market is poised for a new cycle of price increases.

Previously, the CIS market was impacted by subdued demand in the consumer market, leading to a decline in market prices and making CIS one of the first component to experience price declines. However, entering the latter half of this year, the demand for smart devices, particularly in the smartphone market, has started to recover comprehensively.

This is driven by strong procurement efforts from Chinese smartphone brands, significantly boosting inventory demand and becoming the catalyst for the rapid clearance of CIS inventory.

(Photo credit: Samsung)

Following the Singles’ Day Sale in China, demands are relatively cooled down. While for DRAM spot prices, market experiences fluctuations due to subdued demand and increased supply of used chips. In contrast, NAND spot price remains relatively strong under the ongoing reduction in supply.

DRAM Spot Market

Following the Singles’ Day promotional events in China, demand has cooled down compared with the previous few weeks. Looking at DRAM spot prices, prices for chips from suppliers have remained steady, but there has been an influx of used chips stripped from decommissioned modules. Spot prices of used DDR4 chips have now fallen to US$1.05, significantly lower than the spot price of around US$1.75 for new chips from suppliers. Spot prices of DDR5 chips, on the other hand, have remained relatively stable. However, Kingston has not raised module prices, making it difficult to sustain the upward momentum. The average spot price of mainstream chips (DDR4 1Gx8 2666MT/s) rose by 1.54% from US$1.683 last week to US$1.709 this week.

NAND Flash Spot Market

Demand from the spot market has become even more enervated after China’s Double 11 shopping festival when compared to that of several weeks ago. In terms of spot prices, the mainstream 512Gb wafer is supported by suppliers’ ongoing diminishment of wafer provision, and continues to march towards US$2.7-US$2.9 at a relatively robust tendency in comparison with DRAM spots, despite poor demand. 512Gb TLC wafer spots have risen by 11.54% this week, arriving at US$2.862.

On November 28, CXMT revealed its latest DRAM product, LPDDR5. As the first Chinese brand to independently develop and manufacture LPDDR5 products, CXMT marks a breakthrough in the Chinese market and broadens its product reach in the mobile terminal market, reported by MooreNews.

CXMT’s LPDDR5, the fifth generation of low-power double data rate synchronous dynamic random access memory, boasts a 50% increase in single-die density and speed compared to LPDDR4X, respectively reaching 12Gb and 6400Mbps. Notably, power consumption is reduced by 30%. Featuring robust RAS features, including on-die error correction code (ECC) for real-time error correction, LPDDR5 enable data security and system stability. The 12GB LPDDR5 chip from CXMT is the first product adopting Package on Package (PoP) stacking for the company.

The launch of LPDDR5 by CXMT enhances the quality and reduces costs for personal and business applications, further expanding its footprint in the mobile market. As the first company in launching independently developed and manufactured LPDDR5 products in China, CXMT accelerates the industrialization of the DRAM industry, spearheading the Chinese DRAM industry into the LPDDR5 era.

LPDDR5 chips bring faster speeds and lower power consumption to mobile electronic devices, significantly improving overall product performance. According to CXMT’s website, LPDDR5 products have already received validation from major Chinese smartphone brands such as Xiaomi and Transsion, with plans to expedite overall market commercialization.

In its product lineup, CXMT specializes in DRAM design, with DDR4, LPDDR4X, and DDR4 modules catering to diverse storage needs in terms of performance, capacity, and usage. Collaborating through joint research and development with leading customer companies, CXMT delivers highly customized integrated solutions, effectively meeting the varied demands of the market. The introduction of LPDDR5 further solidifies CXMT’s position in the mobile market.
(Image: CXMT)

Loongson Technology Corp Ltd, unveiled its latest domestic CPU, Loongson 3A6000, on November 28th in Beijing, China. Notably, this CPU is entirely based on Chinese in-house design, free from reliance on any foreign licensed technology. During the product launch, Weiwu Hu, the chairman of Loongson, announced that next phase will utilize mature processes to achieve performance comparable to Intel’s advanced process, reported by CTEE.

Loongson 3A6000 adopts a China domestic instruction set architecture(ISA), showcasing China’s capability to self-develop a new generation CPU, as reported by CCTV News. This CPU can run various cross-platform applications, catering to the needs of diverse large and complex desktop scenarios.

The release of the Loongson 3A6000 signifies a pivotal milestone, highlighting China’s achievement in self sufficiency and product performance, bringing it on par with international mainstream products.

According to Mydrivers.com, test results indicate that the overall performance of the Loongson 3A6000 processor is comparable to Intel’s 10^th Gen Core quad-core processor launched in 2020. Notably, the Loongson 3A6000 is built on the self-developed ISA “LoongArch,” showcasing complete independence from foreign licensing, from top-level structure to ISA and application binary interface (ABI) standards.

In terms of core performance, the Loongson 3A6000 boasts a main frequency of 2.5GHz, supports 128-bit vector extension (Loongson SIMD eXtension, LSX), and 256-bit advanced vector extension (Loongson Advanced SIMD eXtension, LASX). It also supports simultaneous multi-threading technology (SMT2), featuring a total of 8 logical cores on the entire chip.

Hu highlighted that the 3A6000 has charted a path based on mature processes, optimizing performance through design. This achievement marks comparable performance with Intel and AMD under relatively weaker process conditions. The next step involves continuing to use mature processes to achieve performance levels on par with Intel’s advanced technology.

Regarding the upcoming Loongson 3B6000, Hu mentioned during the third-quarter earnings briefing that Loongson is strategically focused on enhancing efficiency, aiming to reach or approach the performance level of Apple’s CPU for each GHz.
(Image: Jiwei)