On October 30th, major memory manufacturer Western Digital unveiled its financial results for the first quarter of 2024. During this quarter, the company achieved revenue of $2.75 billion, marking a 3% increase compared to the previous quarter but a 26% decrease compared to the same period last year.

The Potential for Sustained Growth in the Cloud Market

Taking a closer look at end-market dynamics in this quarter, flash memory prices continued to decline, but a surge in product shipments drove quarterly growth in specific business segments.

Western Digital’s cloud business revenue was $872 million, accounting for 32% of total revenue, with a 12% quarterly decrease and a significant 52% annual drop. On client revenue, revenue reached $1.147 billion, comprising 42% of total revenue, showing an 11% quarterly growth but a 7% annual decrease. Consumer revenue stood at $731 million, constituting 26% of total revenue, with a 14% quarterly increase and an 8% annual increase.

Looking forward, Western Digital expects its Q2F24 to range from $2.85 billion to $3.05 billion.

Western Digital’s CEO, David Goeckeler, credited the Q1F24 to the team’s dedication. He said, “Our ability to develop differentiated and innovative products across a broad range of end markets has resulted in sequential margin improvement across both flash and HDD businesses.”

Goeckeler also noted that consumer and client markets continue to perform well, and the cloud market is expected to sustain growth. As market conditions improve, Western Digital’s refined cost structure empowers the company to leverage enhanced profitability.

Data from TrendForce, as of September 12th, places Western Digital fourth in the global NAND Flash market for Q2 2023, with a market share of 14.7%. This positions the company closely behind industry giants like Samsung Electronics, Kioxia, and SK Group.

Regarding the merger with Kioxia, media reports suggest that Western Digital, following stalled negotiations, plans to divest its flash memory business, accompanied by a new round of financing to address part of its debt. This strategic separation allows the company to maintain its traditional hard drive business and create two distinct publicly traded entities.

Goeckeler also explained, “However, given current constraints, it has become clearer to the board in recent weeks that delivering a stand-alone separation is the right next step in the evolution of Western Digital.”

Is the Storage Industry Poised for a Revival?

The storage industry has been facing a period of stagnation due to economic challenges and sluggish demand in the consumer electronics sector. Major players in the storage market, including Western Digital, Micron, Samsung, and Kioxia, have been compelled to reduce production and investments to address the issue of oversupply.

However, recent reports indicate that memory chip prices are set to experience a significant upturn in the fourth quarter of the challenging year 2023. Experts suggest that the industry is gradually moving towards a phase of growth.

In terms of pricing, TrendForce forecasts a general price increase in both DRAM and NAND Flash products, starting in the Q4. For DRAM, a seasonal price increase of approximately 3-8% is expected. The sustainability of this upward trend will depend on suppliers’ commitment to production reduction strategies and the extent of demand recovery, particularly in the general server domain.

As for NAND Flash, TrendForce anticipates a comprehensive price increase of around 8-13% in the fourth quarter. Looking forward to 2024, the continuation of this upward trend for NAND Flash may face challenges unless original manufacturers maintain production reduction strategies and demand for Enterprise SSDs in the server domain experiences a revival.
(Image: Western Digital)

Explore more:

• NAND Flash and DRAM Spot Prices Upward in Late September, DRAM Price Stabilizes until Year-End
• Q2 NAND Flash Revenue Up 7.4%, Anticipated to Exceed 3% Growth in Q3, Says TrendForce
• NAND Flash Prices Expected to Stabilize and Rebound in Q4, Projected to Remain Steady or Increase 0-5%, Says TrendForce

Powerchip Semiconductor Manufacturing (PSMC), SBI Holdings, Inc., Japan’s Miyagi Prefecture and JSMC signed the Memorandum of Understanding on the 31st, confirming that JSMC’s first fab will be selected in Japan. The Second Northern Sendai Central Industrial Park in Ohira Village, Kurokawa District, Miyagi Prefecture (Second Northern Sendai Central Industrial Park) is the planned site.

It is understood that in August this year, PSMC and SBI jointly established JSMC and began preparations for setting up a wafer fab in Japan. After extensive discussions with the municipal government of the candidate locations and multiple on-site inspections, a number of factors were taken into consideration, including: the robustness of infrastructure such as water supply, drainage, high-voltage power supply, and logistics capabilities, as well as the park’s ability to withstand natural disasters, and surrounding life.

PSMC states that the quality of the environment and the potential for future industry-university cooperation ultimately led to the selection of the Second Northern Sendai Central Industrial Park as the site.

PSMC said that SBI is committed to working closely with the Japanese government, Miyagi Prefecture, partners and relevant financial institutions to discuss various details of investment in Japan. More information will be announced after the details are finalized.

(Image: PSMC)

According to CTEE, NVIDIA’s forthcoming AI server, the GB200 (B100), slated for a 2024 release, has entered the certification phase in the supply chain. Recent market rumors suggest that Foxconn, originally intended to secure orders for the B100 board, faced certification challenges. As a result, Wistron has maintained its initial order share.

Additionally, it is worth noting that Ingrasys, a subsidiary of Foxconn, is actively manufacturing the H100 product and is a strong contender to secure orders.

Unofficial sources indicate that NVIDIA initially considered making Foxconn the second supplier for AI-GPU server baseboard in the upcoming B100 series. However, due to yield concerns and other factors, Wistron is still expected to receive 100% of the orders. Wistron has also capitalized on the opportunity to secure orders for the front-end AI-GPU module, which appears to be a successful move.

The rapid evolution of AI has intensified competition among assembly plants. Wistron and Foxconn play crucial roles as suppliers for NVIDIA’s current mainstream H100 series GPU modules and baseboards.

Wistron, as the exclusive supplier for H100 baseboards in the NVIDIA DGX and HGX architectures, also holds the exclusive role of providing mainboards and assembling AI servers for DGX. As shipments of the H100 series AI servers, built on the NVIDIA DGX and HGX frameworks, steadily increase in the latter half of the year, Wistron’s AI server-related product business shows consistent growth.

It’s worth noting that Ingrasys is responsible for manufacturing the H100. NVIDIA’s founder, Jensen Huang, and Foxconn’s Chairman, Young Liu, jointly attended a technology event, highlighted the close collaboration in between, underscoring Foxconn’s determination to secure B100 orders.

(Image: Wistron)

According to Economic Daily News, industry insiders said that Vanguard International Semiconductor (VIS) is in talks to acquire land and facilities from AUO’s Singapore plant for its first 12-inch fab. The estimated investment for this project is a substantial US$2 billion. VIS is making a strategic move to specialize in producing advanced chips for the automotive industry.

AUO is scheduled to hold a conference on October 31st, and VIS will follow suit on November 7th. Both companies are currently in a pre-conference quite period and haven’t made any official comments on the recent rumors.

Per reports, AUO has been gradually relocating its equipment from its Singapore plant back to Taiwan. Following a model where AUO sold its L3B fab and related facilities in Hsinchu Science Park, Taiwan, they plan to sell this Singapore plant to VIS. Notably, this Singapore plant is conveniently located just an eight-minute drive away from TSMC’s Singapore plant (SSMC), and the transaction is estimated to be worth over a billion dollars.

The Singapore plant in question was acquired by AUO in 2010, and it specializes in the production of 4.5th generation low-temperature polycrystalline silicon (LTPS) display panels and also has some capacity for AMOLED displays. However, the land use contract for this plant expired during the pandemic. AUO then redirected the plant’s focus towards supporting display production. However, with a decrease in post-pandemic notebook demand, AUO’s strategy in Singapore shifted from manufacturing to establishing itself as a regional service center.

Recent developments show that AUO has begun a significant production line adjustment.  They’re transforming the Longtan Aspire Park in Northern Taiwan into a hub for mass-producing Micro LED technology and integrated automotive display modules. Insiders suggest that AUO’s LTPS production line in the Singapore plant has already started moving to Longtan Aspire Park, where they’re gearing up for Micro LED technology development and eventual mass production.

Regarding AUO’s Singapore plant, the company recently stated that they are conducting a thorough evaluation of the operational efficiency of their various plants worldwide. The production schedule for the Singapore plant extends until early 2024, and they’ll subsequently assess the equipment and assets. The company is in the process of discussing and evaluating the related strategies, and they haven’t made any final decisions yet. AUO’s Singapore plant employs approximately 500 people, and they are committed to following local regulations to safeguard their employees’ rights.

In an earning calls last year, Chairman of VIS, Leuh Fang, revealed that the company already operates five 8-inch fabs. Fab 5 still has the potential for increased wafer production, but due to the challenges of acquiring new 8-inch equipment, establishing a brand-new 12-inch fab in Singapore makes more sense if customer demand necessitates capacity expansion.

This development isn’t entirely surprising, as there’s a precedent for fab transactions between AUO and VIS. In late April 2021, AUO sold its L3B plant in the Hsinchu Science Park, along with its related equipment, to VIS for NT$905 million (pre-tax).
(Image: AUO)

Escalating demand in sectors like electric vehicles, 5G communications, photovoltaics, and memory storage is currently fueling the rapid growth of the silicon carbide (SiC) industry. Key players in China are intensifying their research and development efforts to overcome technological challenges and secure a substantial market share.

The arrival of 8-inch SiC substrates is crucial and marks a technological significant milestone that everyone desires, opening up new possibilities.

The Turning Point: 8-Inch SiC Substrates

As a third-generation semiconductor material, SiC boasts advantages like a wider bandgap, higher breakdown electric field, and exceptional thermal conductivity. Its stellar performance in high-temperature, high-pressure, and high-frequency applications positions it as a cornerstone in the realm of semiconductor materials.

Fueled by growing demand downstream, the SiC industry is in the midst of a high-speed expansion phase. TrendForce’s analysis forecasts the SiC power device market to reach US$2.28 billion in 2023, with an impressive annual growth rate of 41.4%. By 2026, this market is expected to expand further, reaching US$5.33 billion.

From an industry perspective, SiC devices’ cost structure encompasses substrates, epitaxy, tape out, and packaging processes, with substrates accounting for a substantial 45% of total production costs. To reduce per-device costs, the strategy revolves around enlarging SiC substrates and increasing the number of die per substrate. Notably, 8-inch SiC substrates offer distinct cost advantages over their 6-inch counterparts.

Data from Wolfspeed reveals that the transition from 6-inch to 8-inch substrates results in a modest increase in processing costs but yields an impressive 80-90% increase in the production of qualified chips. The greater thickness of 8-inch substrates helps maintain the shape during processing, reduces edge curvature, and minimizes defect density. Consequently, adopting 8-inch substrates can lead to a substantial 50% reduction in unit production costs.

According to TrendForce’s analysis, the SiC industry currently centers around 6-inch substrates, holding an impressive 80% market share, while 8-inch substrates account for only 1%. The transition to larger 8-inch wafers represents a crucial strategy to further reduce SiC device costs. As 8-inch wafers mature, their pricing is expected to be about 1.5 times that of 6-inch wafers, while producing approximately 1.8 times dies compare with 6-inch SiC wafers, greatly improving wafer utilization.

The industry is steadfastly progressing from 6-inch to 8-inch substrates, offering Chinese manufacturers a unique opportunity to surge ahead. TrendForce’s data suggests that the current market share of 8-inch products stands at less than 2%, with a projected growth to approximately 15% by 2026.

Seizing the Moment: Advancing 8-Inch SiC Substrates

Industry experts highlight the dual challenges of growing 8-inch SiC crystals: (1) the development of 8-inch seed crystals and (2) temperature field uniformity, gas-phase material distribution, transportation efficiency, and increased stress leading to crystal cracking.

As per industry insiders, 2023 is poised to become the “Year of 8-Inch SiC.” Throughout the year, global power semiconductor giants like Wolfspeed and STMicroelectronics have accelerated their efforts to develop 8-inch SiC. In China, significant breakthroughs have been achieved in SiC equipment, substrates, and epitaxy segments, with numerous industry leaders forming alliances with international power semiconductor giants.

TrendForce’s data from the Compound Semiconductor Market reveal that 10 enterprises and institutions in China are currently advancing the development of 8-inch silicon carbide (SiC) substrates. These include Semisic, JSG, SICC, Summit Crystal, Synlight, Institute of Physics Chinese Academy of Sciences, Shandong University, TankeBlue, KY Semiconductor, and IV-Semitec.

Here are the list of Chinese companies in the 8-inch SiC substrate field this year:

KY Semiconductor:

• April 2023: Successfully completed the 8-inch SiC pilot line.
• June 2023: Achieved an average crystal growth yield of over 50% in the 8-inch SiC pilot line with crystal thickness exceeding 15mm.
• September 2023: Successfully launched the 8-inch SiC substrate processing workshop.

IV-Semitec:

• May 2023: Grew 8-inch n-type silicon carbide ingots with a thickness of 27 millimeters.
• September 2023: Signed a strategic cooperation agreement with Spectrum Semiconductor and Gietsic for the joint development of SiC-related products.
• October 2023: Commenced the construction of the pilot line for SiC substrates, with an annual production capacity of 600,000 pieces of 6-8 inch SiC substrates.

Summit Crystal:

• June 2023: Opened the Jinan’s Base with a planned production capacity of 500,000 pieces. It aims to reach full production by 2025, with an expected output value exceeding 5 billion RMB.
• August 2023: Cooperated with Shangdong University, successfully manufactured 8-inch SiC wafers the threading screw dislocation (TSD) density was 0.55 cm^-2, and the basal plane dislocation (BPD) density was 202 cm^-2.

Hoshine Silicon:

• May 2023: Successfully achieved the development and mass production of 8-inch silicon carbide substrates.
• October 2023: 20,000 SiC substrates passed acceptance inspection, demonstrating the capability for mass production.

Synlight:

• September 2021: Launched the single crystal silicon carbide growth project with plans to achieve an annual production capacity of 100,000 pieces upon reaching full production.
• April 2023: Successfully developed 8-inch silicon carbide crystal samples and plans to start small-scale production by the end of the year.

TankeBlue:

• January 2023: Successfully prepared 4H-SiC single crystals with a diameter of 209 mm using the physical vapor transport (PVT) method and produced standard 8-inch SiC single crystal substrates.
• May 2023: Signed a supply agreement with Infineon and started supplying silicon carbide materials.
• August 2023: Began construction of the second-phase expansion project, planning to increase capacity by 160,000 pieces.

JSG:

• June 2023: Successfully developed 8-inch single-wafer silicon carbide epitaxial growth equipment compatible with 6 and 8 inch silicon carbide epitaxial production.
• October 2023: Achieved independent development and commissioning of 8-inch single-wafer silicon carbide epitaxial growth equipment with thickness uniformity within 1.5% and dopant uniformity within 4%.

SanAn Optoelectronics:

• Established a joint venture with STMicroelectronics to build an 8-inch silicon carbide device manufacturing plant, which is expected to start production in the fourth quarter of 2025.
• September 2023: Announced the 8-inch silicon carbide substrate with a production capacity of 12,000 pieces per month, and silicon-based gallium nitride capacity of 2,000 pieces per month.
• October 2023: Started small-scale production and sampling of 8-inch silicon carbide substrates using low-cost technology with low defect density.

SICC:

• May 2023: Signed a new substrate and ingot supply agreement with Infineon, planning to transition to 8-inch silicon carbide wafers.
• June 2023: Successfully prepared low-defect 8-inch silicon carbide crystals with a thickness exceeding 60mm.