Samsung’s next-generation flagship phone, the Galaxy S25 series, is set to debut in three months. According to current market rumors, the lineup will still include the S25, S25+, and S25 Ultra models. In addition, Samsung is expected to release a “lite flagship” version, the Galaxy S25 FE. As reported by SamMobile, the S25 FE will be powered by MediaTek’s Dimensity chipset and is slated for release by the end of next year.

Prior to this report, there had been widespread speculation that MediaTek’s Dimensity 9400 would be used in the Galaxy S25 series launching early next year.

However, a recent update from SamMobile, citing @Jukanlosreve on platform X, revealed that the negotiations between Samsung and MediaTek, which initially aimed to include the Dimensity chip in the Galaxy S25, have shifted to placing the Dimensity chip in the S25 FE instead.

The latest information suggests that only the S25 FE will feature the MediaTek Dimensity chipset, while the rest of the S25 series will exclusively run on Qualcomm’s Snapdragon processors.

@Jukanlosreve did not specify the exact model of the chipset for the S25 FE, but SamMobile speculates that it will be the Dimensity 9400, MediaTek’s latest fourth-generation flagship mobile chipset, built on TSMC’s 3nm process, designed to compete with Qualcomm’s new Snapdragon 8 Elite.

(Photo credit: MediaTek)

China has taken steps to assert state ownership over its rare-earth materials necessary for semiconductor production by enacting a regulation that came into effect on October 1st. In response to China’s export restrictions, the U.S. Department of Defense agency DARPA (Defense Advanced Research Projects Agency) has asked Raytheon to develop new types of semiconductors that do not rely on materials controlled by China, according to Tom’s Hardware.

Wide-bandgap semiconductor materials such as gallium nitride (GaN) are used in the production of advanced power chips and radio frequency amplifiers, and China controls a significant portion of the global gallium supply. According to a report from Tom’s Hardware, China’s recent export restrictions on gallium pose potential risks to American national security. To counter this challenge, the U.S. DARPA has asked Raytheon to develop synthetic diamond and aluminum nitride (AIN) semiconductors.

According to Tom’s Hardware, while GaN is a leading material for high-power and high-frequency semiconductors with a bandgap of 3.4 eV, synthetic diamond has the potential to surpass GaN’s capabilities with its bandgap of around 5.5 eV. However, synthetic diamond is still an emerging semiconductor material, and there are many challenges to overcome for mass production. Aluminum nitride features an even wider bandgap of about 6.2 eV.

As per the report from Tom’s Hardware, Raytheon aims to develop diamond and aluminum nitride semiconductors for both current and next-generation radar and communication systems, including radio frequency switches, limiters, and amplifiers that can be integrated into high-speed weapon systems. However, Raytheon has not yet developed suitable semiconductors.

According to the press release from Raytheon, during phase one of the contract, the Raytheon Advanced Technology team will develop diamond and aluminum nitride semiconductor films and their integration onto electronic devices. Phase two will focus on optimizing and maturing the diamond and aluminum nitride technology onto larger diameter wafers for sensor applications.

Quoting from the press release, Colin Whelan, president of Advanced Technology at Raytheon, states that “this is a significant step forward that will once again revolutionize semiconductor technology.” He emphasizes that “Raytheon has extensive proven experience in developing similar materials, such as gallium arsenide and gallium nitride, for Department of Defense systems. By leveraging that pioneering history and our expertise in advanced microelectronics, we will work to advance these materials for future applications.”

(Photo credit: iStock)

Read more

• [News] China’s Gallium and Germanium Export Restrictions Risk Chip Production Shortages
• [News] Chip War Escalates: China to Enforce State Ownership of All Rare Earth Materials in October

A major collaboration between Taiwan and Japan on semiconductors has been halted, as PSMC suddenly informed SBI Holdings in late September that it was unable to proceed with the plan of constructing a fab in Japan as it had promised a year ago. With various speculations circulating concerning the reason behind, SBI Holding Chairman and CEO Yoshitaka Kitao has made his stance.

By harshly criticizing PSMC on his personal Facebook account, he accused the company of dishonesty, according to a report by TechNews.

Kitao referred to the breakup as “a blessing in disguise,” for the partnership has been terminated before any damage has been done, the report notes. He even quoted the saying of Confucius, a well-known Chinese philosopher, to express his disappointment in PSMC. ‘Without trust, one cannot stand,” he said.

According to Kitao, this is the first time SBI Holdings has had to dissolve a partnership almost unilaterally, even after making significant concessions.

According to TechNews, Kitao elaborated on his Facebook by saying that he and Frank Huang, Chairman of PSMC, had met with key government officials together, as well as providing a detailed explanation to the other party regarding the conditions for receiving subsidies from the Japanese government.

However, it is “unbelievable” that the Taiwan-based foundry company went back on their previous commitments and acted with extreme dishonesty, he accused.

According to a previous report by Nikkei, PSMC informed SBI Holdings in September that it was not willing to assume the risks linked to the project. As a result, the two companies will dissolve their partnership aimed at constructing the facility in Miyagi Prefecture in northeastern Japan, which was originally expected to begin mass production by 2027.

Nikkei also notes that PSMC has been struggling with mature nodes due to the oversupply from Chinese firms, resulting in operating losses for five consecutive quarters since Q2 2023.

According to TechNews, PSMC claimed that its collaboration with SBI would follow the Fab IP model, in which the former would provide consulting for the factory establishment, personnel training, and technology transfer, charging service fees and royalties to its Japanese partner, and it has no plans to invest in or lead the operations of the new factory.

Moreover, PSMC reportedly claimed that the subsidy policy of Japan’s Ministry of Economy, Trade and Industry (METI), stipulates that recipients must guarantee continuous production at the new facility for at least 10 years.

Given SBI’s background in finance and that it is without experience in the semiconductor industry, METI required PSMC to share responsibility for this guarantee, as PSMC claimed that being a publicly listed company in Taiwan, guaranteeing the operations of a Japanese factory without holding a controlling stake would violate Taiwan’s Securities and Exchange Act, TechNews notes.

Read more

• [News] PSMC’s Frank Huang Explores Global Expansion through Fab IP, Diverging from TSMC’s Path
• [News] Taiwan’s PSMC Denies Rumors that Financial Troubles Caused the End of Partnership with Japan’s SBI

(Photo credit: PSMC)

At TSMC’s upcoming earnings call on Thursday (October 17th), capital expenditure has become one of the key points of interest for the market. According to a report from Economic Daily News, institutional investors believe that TSMC’s capital expenditure range this year will remain unchanged. While next year’s capital expenditure plan will be announced at the next earnings call in January, it is suggested that capital expenditures for 2025 will increase compared to this year.

TSMC is currently in the quiet period before earnings call. According to the report from Economic Daily News, institutional investors point out that TSMC’s focus on 2nm-related mass production plan could significantly boost subsequent capital expenditures.

It is estimated that in 2025, TSMC’s capital expenditure will reach USD 32 billion to USD 36 billion, making it the second highest in history, with an annual growth rate of approximately 20%. TSMC’s increase in capital expenditure will significantly benefit ASML, Applied Materials, and related suppliers in Taiwan, the report noted.

In the earnings call in July, TSMC mentions that, to meet the customer demand, this year’s expected capital expenditure range will be narrowed. The original forecast in April was between USD 28 billion and USD 32 billion, which was adjusted to a range of USD 30 billion to USD 32 billion in July.

As for TSMC’s capital expenditures in the past, the historical high occurred in 2022, when it reached a record of USD 36.29 billion. In contrast, TSMC’s actual capital expenditure for 2023 is USD 30.45 billion, falling below the lower bound of the expected USD 32 billion set by the company during the October 2023 earnings call. This shortfall has sparked discussions in the market at that time.

Previously, sources indicated that TSMC has invested heavily in research and development related to advanced 2nm processes. The demand for 2nm technology is stronger than anticipated, and there are indications that production capacity planning will also include expansions in the Southern Taiwan Science Park, as suggested by the report from Economic Daily News.

According to the report, TSMC’s 2nm capacity expansion is expected to encompass four phases in Hsinchu Science Park and Baoshan, along with Phase 2 in Kaohsiung. If the plans for the Southern Taiwan Science Park come to fruition, TSMC’s 2nm technology could achieve a total of at least eight phases and eight fabs of production capacity.

Read more

• [News] Preview for TSMC’s Key 3nm Clients ahead of Earnings Call: Order Surge Expected in 2025
• [News] TSMC’s Newly Acquired AP8 Facility in Southern Taiwan Rumored to Start Production in 2H25
• [News] TSMC Took Another Step in Advanced Process Expansion

(Photo credit: TSMC)

Intel, grappling with financial difficulties, is set to enter a peak phase of layoffs this week after announcing plans to cut around 15,000 jobs. According to a report by CTECH, following the departure of employees who opted for early retirement at the end of September, Intel is moving forward with its workforce reduction plan, aiming to complete the layoffs by the end of the year.

CTECH reported that managers across Intel’s divisions have already submitted lists of employees recommended for layoffs to their superiors. These employees will soon be notified, with many expected to receive notices as early as this week. Intel’s CEO, Pat Gelsinger, stated last month that most layoff notices will be issued around mid-October.

CTECH quoted Gelsinger in a message to employees, stating that Intel has already passed the halfway mark in its goal of reducing the workforce by approximately 15,000 employees by the end of the year, largely through voluntary early retirements and separation packages. However, he acknowledged that more difficult decisions lie ahead, with the next round of notifications expected in mid-October.

Intel announced in early August that it would cut approximately 15% of its workforce and suspend dividend payments starting in the fourth quarter. This layoff plan is part of Intel’s broader effort to implement a $10 billion cost restructuring

Then, on September 16th, Intel announced plans to transform its foundry business into a wholly-owned subsidiary with its own board of directors.

(Photo credit: Intel)