According to industry sources cited in a report from TechNews, a temporary power outage occurred in certain areas in northern Taiwan (Linkou, Taishan, Xinzhuang) at 1:35 PM on August 13.

Addressing the matter, DRAM manufacturer Nanya Technology is currently assessing the damage, while Micron, on the other hand, has experienced voltage sag and reports no issues at this time. Still, some rumors have suggested that parts of Micron’s dry etching and wet process equipment has been affected.

Industry sources cited by TechNews mentioned that Nanya Technology’s plant experienced a power outage lasting about 20 minutes but activated its Uninterruptible Power Supply (UPS) system. The photolithography and etching areas are expected to be minimally affected, but the non-UPS sites are still under assessment.

Currently, Nanya Technology is still confirming the extent of the damage.

According to an industry assessment cited by TechNews, the impact of this power outage on Nanya Technology is limited, with existing inventory, the production lines can continue to supply products.

Read more

• [News] HBM Supply Shortage Prompts Micron’s Expansion, Expected Schedule in Japan and Taiwan Revealed
• [News] Nanya Technology Chairman Names 10nm 1B Process as Key Expansion Focus for the Year

(Photo credit: Micron)

In August 2022, U.S. President Joe Biden signed the “Inflation Reduction Act” and the “CHIPS and Science Act,” providing over USD 400 billion in tax incentives, loans, and grants. However, according to a report from Financial Times, about 40% of the investment projects under these acts have been delayed or put on hold.

In the first year after these laws were implemented, companies announced investment projects totaling USD 220 billion. However, among these projects, around USD 84 billion of investment has now been delayed by anywhere from two months to several years, with some even being indefinitely postponed.

Notably, TSMC has delayed the mass production schedule for its second plant in Arizona by two years. The foundry giant’s local suppliers, such as Chang Chun Group, have also postponed a USD 300 million factory investment project by two years, while KPCT Advanced Chemicals has put its USD 200 million project on hold as well.

Other major investment projects that have been put on hold include LG Energy Solution’s USD 2.3 billion battery storage facility in Arizona, Italy’s Enel’s USD 1 billion solar panel plant in Oklahoma, and Albemarle’s USD 1.3 billion lithium refining plant in South Carolina.

Industry sources cited by the report reveal that the uncertainty of policies during the election year, coupled with deteriorating market conditions and slowing demand, has led the companies to alter their plans.

Specifically, the slow approval process for CHIPS Act funding and unclear rules for the Inflation Reduction Act have also hinted at delays in some investment projects.

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• [News] GlobalWafers Receives USD 400 Million Subsidy from CHIPS Act to Establish New Plant in the US
• [News] TSMC Rumored to Appoint Higher-Level Executive to Accelerate Progress at U.S. Fab
  

(Photo credit: TSMC)

According to a report on the official website of the Shanghai Qingpu District’s Government on August 11th, the exterior construction and interior decoration of Huawei’s Xicen apartment project in Shanghai have been completed, and the project has entered its final stages.

The apartments are expected to be finished by the end of September this year. Once completed, the project will provide over 6,000 housing units for the influx of Huawei research talent moving to Qingpu (Shanghai). This further hints that Huawei’s largest global R&D center is getting closer to being fully operational.

The project, which started construction in December 2023, will provide ample accommodation for employees serving in the eight parks at Huawei’s Lianqiu Lake R&D Center. Once completed, it will house over 15,000 people.

Reportedly, the Huawei Lianqiu Lake R&D Center in Shanghai’s Qingpu District, was completed on July 9. It covers an area of 2,400 acres, with a total building area of 2.06 million square meters and an investment exceeding CNY 10 billion.

The center is mainly used for research, office space, and supporting facilities, including R&D offices, laboratories, conference halls, cafeterias, and data centers.

This research center, per a previous report from EE Times China, is designed with 40,000 offices and is expected to gradually attract about 35,000 Huawei R&D talents.

The focus will be on R&D, product design, and sales in areas such as 5G chips, wireless, and the Internet of Things (IoT). By the end of this year, it is anticipated that 10,000 personnel will have joined the new R&D center, primarily consisting of employees from other Huawei R&D centers and newly hired research and development talent.

Regarding Huawei’s substantial investment in building this research center, tech media outlet “Tom’s Hardware” highlighted on July 14th that amid the US-China semiconductor rivalry and various US sanctions against Huawei, the company must bolster its research and development efforts. Consolidating multiple research centers allows Huawei to streamline operations and facilitate easier collaboration among different departments.

The report states that this flagship project showcases Huawei’s investment commitment in future technologies. The new R&D Center is even said to be larger in scale than the combined size of Apple Park and Microsoft’s Redmond Campus headquarters in Seattle.

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• [News] Huawei’s Largest Global R&D Center in Shanghai Unveiled, Invests Over USD 1.4 Billion
• [News] Patent War Begins – Huawei and MediaTek Go after Each Other for Patent Infringement

(Photo credit: Huawei)

In early August, Taiwanese IC design giant MediaTek revealed its plan to unveil the Dimensity 9400 flagship series in October, designed to support most large language models on the market. Now more details regarding MediaTek’s ambition in AI have surfaced, as reports from Wccftech and Chinese media MyDrivers note that the company teams up with NVIDIA, targeting to launch their AI PC chip in the first half of 2025.

The reports indicate that the chip is currently in the design phase, with verification and sampling anticipated next quarter.

TrendForce projects that the Arm chip co-developed by MediaTek and NVIDIA, with adoption of Wi-Fi 7 and 5G, is slated to occupy a spot in the AI NB market since 2Q25, and initiate a new wave of technical innovation after 2025.

According to Wccftech, rumors about a custom chip from MediaTek for the AI PC market have been circulating for a while, and the excitement of the market skyrocketed when NVIDIA is reportedly joining the development.

The AI PC SoC is said to confront Qualcomm’s Snapdragon X Elite series. Wccftech suggests that the chip will be manufactured using TSMC’s 3nm node, based on ARM architecture.

With AI giant NVIDIA involved, the SoC is also likely to achieve breakthroughs in the integrated graphics arena, the report says. In addition, the report also notes that given MediaTek’s expertise in creating power-efficient mobile chips like the Dimensity 9400, the company may be well-equipped to develop a chip for the AI PC segment that delivers both strong performance and impressive efficiency.

MediaTek and NVIDIA are also collaborating on automotive chips, with plans to launch their first chip in early 2025. MediaTek CEO Rick Tsai mentioned earlier that though details are yet to be disclosed, significant advancements in the automotive sector are expected between 2027 and 2028.

Read more

• [News] MediaTek Ventures into AI Accelerators, Aiming to Release Dimensity 9400 in October
• Penetration Rate of AI NBs to Arrive at 20% by 2025 as AI Applications Steadily Refine and Actuate Consumer Demand, Says TrendForce 

(Photo credit: MediaTek)

Facing increased market demand and the ongoing recovery of the memory industry, a report from Korean media outlet ETNews has reported that Samsung has confirmed its investment plan for the 6th-Generation DRAM production line at the Pyeongtaek P4 plant, with the goal of starting mass production in June 2025.

Reportedly, the 6th-generation DRAM, known as ‘1c ,’ is a next-generation DRAM utilizing 10nm-class technology. Despite it is said to be a product that has not yet been commercialized in the global semiconductor industry, both Samsung Electronics and SK hynix are already preparing for mass production.

Samsung’s Pyeongtaek P4 is a comprehensive semiconductor production center, divided into four phases.

As per ETNews, Samsung plans to initiate 1c DRAM production by the end of this year. The company is said to be considering launching HBM4 using 1c DRAM in the second half of 2025.

Given that HBM consumes significantly more DRAM than traditional memory, it is speculated by the report that Samsung’s construction of the 1c DRAM production line at the Pyeongtaek P4 plant may also be in preparation for HBM4.

As per TrendForce’s latest report on the memory industry, it’s revealed that DRAM and NAND Flash revenues are expected to see significant increases of 75% and 77%, respectively, in 2024, driven by increased bit demand, an improved supply-demand structure, and the rise of high-value products like HBM.

Furthermore, TrendForce also reports that Samsung’s P4L facility will be the key site for expanding memory capacity starting in 2025, starting with NAND production. Equipment installation for DRAM is expected to begin in mid-2025, with mass production of 1c nanometer DRAM slated to commence in 2026.

Read more

• [News] Samsung Develops Custom HBM with Tech Giants, with Commercialization Expected in HBM4
• [News] Overview of Expansion Plans by HBM Giants

(Photo credit: Samsung)