In a last-ditch effort before the upcoming board meeting this week, Intel is said to be seeking assistance from the U.S. government. The latest report by CNBC notes that Intel CEO, Pat Gelsinger, turned to Commerce Secretary Gina Raimondo recently, expressing his disappointment with the heavy dependence of U.S. companies on TSMC, the Taiwanese foundry heavyweight.

According to CNBC, after meeting with Intel, Raimondo followed up by meeting with several public market investors to emphasize the significance of U.S. chip manufacturing amid the rising geopolitical risks surrounding Taiwan. Her aim was to encourage shareholders in companies like NVIDIA and Apple to understand the economic advantages of having a U.S.-based foundry capable of producing AI chips, the sources cited by the report said.

Interesting enough, Jensen Huang, CEO of NVIDIA, mentioned yesterday that the U.S. chip giant heavily relies on TSMC for producing its most important chips, saying TSMC’s agility and ability to respond to demand are incredible. Thus, shifting orders to other suppliers could reportedly lead to a decline in chip quality.

Intel has introduced its Lunar Lake processors in early September, with the target to shake up the AI PC market. However, the chips are outsourced to TSMC, manufactured with the foundry giant’s 3nm node.

Getting stuck in its current situation, Intel is said to be pushing U.S. officials to expedite the release of funding, another report by Bloomberg notes. Earlier in April, Intel and Biden administration announced up to USD 8.5 billion in direct funding under the CHIPS Act.

The company is slated to receive USD 8.5 billion in grants and USD 11 billion in loans under the 2022 Chips and Science Act, but this funding is contingent on meeting key milestones and undergoing extensive due diligence, according to Bloomberg. Therefore, like other potential beneficiaries, Intel has not yet received any money.

An official cited by CNBC said that disbursements are anticipated by the end of the year.

Both the U.S. Commerce Department and an Intel spokesperson declined to comment, according to CNBC.

Regarding the latest development of Intel’s plan to shedding more than 15% of its workforce, a report by CTech notes that Intel may lay off over 1,000 employees in Israel as global cuts begin.

CTech states that Intel has been mindful of geopolitical factors and the timing of local holidays in Israel. Therefore, it would be rather unexpected for the company to initiate layoffs in the country before or during the holiday season, which begins in early October and extends through most of the month.

Citing Gelsinger’s remarks, the report notes that the restructuring process will continue until the end of the year, allowing Intel’s Israeli branch a window of time to start the layoffs after the holidays.

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• [News] CEO Jensen Huang Highlights Strong Demand, Stating that Everyone is Counting on NVIDIA
• [News] Intel Reportedly Outsources All Sub-3nm Process Production to TSMC

(Photo credit: Intel)

In recent years, data center has been one of the key areas for GaN (Gallium Nitride) manufacturers to tap power electronics market, and GaN applications in the data center power supply market have taken a big step forward. Notably, the rise of AI technology has further fueled this market at present.

In the AI ecosystem, data centers have enormous demands for high-speed computing and power. According to a TrendForce report, NVIDIA’s Blackwell platform will be officially launched in 2025, replacing the existing Hopper platform, and will become NVIDIA’s primary solution for high-end GPU, accounting for nearly 83% of all high-end products.

For high-performance AI servers like the B200 and GB200, a single GPU can consume more than 1,000W of power.

Facing soaring power demands, the power specifications for each data center rack will increase from 30-40kW to 100kW, posing significant challenges for data center power systems. The combination of GaN and liquid cooling technologies will be critical to improving energy efficiency in AI data centers.

The hike in chip power consumption requires servers to achieve higher power density and efficiency.

GaN, which reduces energy losses and increases power density, is now seen as one of the key technologies for optimizing energy efficiency in AI data centers, which has attracted many players, including Infineon, Texas Instruments (TI), Navitas, Innoscience, Transphorm, CorEnergy, Danxi Tech, and GaNext, to join the race.

Among them, both Navitas and Infineon have unveiled their AI data center power roadmaps.

Infineon’s AI Data Center Power Roadmap (Source: Infineon)

Combining the unique advantages of Si (Silicon), SiC (Silicon Carbide), and GaN (Gallium Nitride), Infineon has launched a 3 kW PSU and a 3.3 kW PSU, with an 8 kW PSU expected to be available in the first quarter of 2025.

The new 8 kW PSU will support AI racks with outputs of up to 300 kW or more. Compared to the 32 W/in³ density of the 3 kW PSU, its efficiency and power density will increase to 100 W/in³, further reducing system size and lowering operator costs.

In terms of GaN technology, Infineon’s CoolGaN™ solution can provide over 99% system efficiency in PFC topologies. Moreover, GaN Systems, acquired by Infineon, already released a 3.2kW AI server power supply as early as 2022 and unveiled its fourth-generation GaN platform in 2023.

The new platform achieves efficiency exceeding the Titanium level, with power density increased from 100W/in³ to 120W/in³. Thereby, the industry highly expects the synergistic effect created by the combination of these two companies.

Navitas introduced its GaNSafe™ and Gen-3 Fast SiC technology last year, along with a 4.5kW CRPS design, achieving more than double the power density of traditional silicon solutions. In July this year, Navitas unveiled its CRPS185 4.5kW AI data center server power solution, with a power density of 137W/in³ and over 97% efficiency.

Navitas AI Data Center Power Roadmap (Source: Navitas)

Navitas revealed that over 60 customer projects involving 3.2kW and 4.5kW power solutions for data centers are currently under development.

These projects are expected to bring millions of dollars in revenue growth for Navitas’ GaN and SiC business between 2024 and 2025. It aims to begin small-scale production of AI data center power solutions in 2024.

Aside from Infineon and Navitas, other manufacturers like TI, EPC, CorEnergy, GaNext, and Innoscience also set sights on this market.

TI reached an agreement with Delta, the world’s largest server power supply provider (with nearly 50% market share), as early as 2021. Based on GaN technology and TI’s C2000™ MCU real-time control solution, they are developing high-efficiency, high-power server PSU for data centers.

Thus, their joint efforts and future fruit in the AI server power market are highly anticipated.

Beyond AI data center server, humanoid robot industry that enjoys burgeoning growth this year, also injects new vitality into the GaN market.

Humanoid robot is assembled by sensing, control, motor, and battery systems, in which GaN can has its place in LiDAR system, motor drive, DC-DC converter, and battery BMS, among which motor drive plays a critical role.

According to TrendForce, the demand for motor driver in humanoid robot has skyrocketed due to the mounting demands for degrees of freedom.

To achieve higher power output, high-power-density, high-efficiency, and fast-response motor driver are in demand, and GaN is a perfect fit for it, which also has the ability to strengthen overall robot performance in terms of heat management, compact design, and overall system design.

It is reported that Siemens, Yaskawa Electric, and Elmo have already integrated GaN technology into their robotic motors, and the GaN industry chain is gearing up for seizing more opportunities.

Currently, companies such as TI, EPC, Transphorm, Innoscience, Navitas, and CorEnergy are actively promoting GaN adoption in motor drive market. Among them, Transphorm has supplied GaN FET products for Yaskawa Electric’s new servo motor.

TrendForce points out that future robots will exceed our imagination, with precise, fast, and powerful movement capabilities as the key parts, which will inevitably push the motors required to drive these movements advance forward, and this is regarded as a boon for GaN technology.

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• [News] Global GaN Power Device Market Size Expected to Reach USD 4.376 Billion in 2030, CAGR of 49%
• [News] Foundry Giant GlobalFoundries Acquired GaN-Related IP

(Photo credit: Infineon)

At its 2024 semi-annual results briefing, Loongson Zhongke Technology announced that the 3B6600 processor is expected to begin sampling in the first half of next year and be officially released in the second half.

Per a report from IThome, Chairman and General Manager Hu Weiwu emphasized that this iteration involves significant structural changes, with anticipated single-core performance ranking among the “world-leading” levels.

Hu previously revealed that the 3B6600, an eight-core desktop CPU currently in development, utilizes a mature process and is expected to achieve mid-to-high-end performance levels comparable to Intel’s 12th to 13th generation Core-i CPUs.

Regarding product cycles, he mentioned that Loongson aims to release at least one server or PC chip each year.

Per Loongson’s previous roadmap, the next-generation 3B6600 processor will feature eight LA864 cores with a clock frequency of 3.0 GHz and include the LG200 integrated graphics card.

Additionally, a faster 3B7000 variant, currently in development, is expected to reach a frequency of up to 3.5 GHz and offer a comprehensive range of I/O interfaces, including PCIe4, SATA3, USB3, GMAC, and HDMI.

Last year, Loongson introduced the desktop CPU Loongson 3A6000, which officially matched the performance of Intel’s 10th-generation Core i4 processor released in 2020.

This year, Loongson successfully developed the 16-core and 32-core versions of the Loongson 3C6000 and 3D6000 server CPUs, which are officially claimed to perform at levels comparable to Intel’s Xeon 4314 and 6338.

As per another report from the global media outlet tom’s Hardware, the rumored new 7nm process may have achieved faster clock frequencies, increased core counts, and other improvements. However, it is still awaiting the release of the latest products.

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• [News] Rising Chinese GPU Contender Emerges? Achieving Local GPU Production in Three Years, Claims “Outperforming AMD”

(Photo credit: Loongson Zhongke Technology)

ACM Research, Inc., a provider of wafer processing solutions for semiconductor and advanced wafer-level packaging applications in China, announced on September 3rd the release of its Ultra C bev-p panel bevel etching tool for fan-out panel-level packaging (FOPLP) applications.

This new tool is designed for bevel etching and cleaning in copper-related processes, offering dual-side bevel etching for both the front and back of panels within a single system, further boosting process efficiency and enhances product reliability.

Moreover, a day after the announcement, the company further revealed that it had received purchase orders for four wafer-level packaging tools, including two from a U.S.-based customer and two from a U.S.-based research and development (R&D) center.

Dr. David Wang, ACM’s president and chief executive officer, believes that FOPLP will grow in importance as it addresses the evolving needs of modern electronic applications, offering benefits in integration density, cost efficiency, and design flexibility.

Reportedly, the new Ultra C bev-p tool is designed to deliver advanced performance, utilizing ACM’s expertise in wet processing. It is one of the first tools to incorporate double-sided bevel etching for horizontal panel applications.

Together with the Ultra ECP ap-p for electrochemical plating and the Ultra C vac-p flux cleaning tools, the Ultra C bev-p is expected to support the FOPLP market by enabling advanced packaging on large panels with high-precision features.

ACM emphasizes that the Ultra C bev-p tool is a critical enabler for FOPLP processes, employing a wet etching technique tailored for bevel etching and copper residue removal.

This process plays a vital role in preventing electrical shorts, reducing contamination risks, and preserving the integrity of subsequent processing steps, ensuring long-term device reliability. The tool’s effectiveness is driven by ACM’s patented technology, designed to tackle the specific challenges of square panel substrates.

Different from traditional round wafers, ACM’s design is said to ensure precise bevel removal process that stays confined to the bevel region, even on warped panels. This is essential for maintaining the integrity of the etching process while ensuring the high performance and reliability needed for advanced semiconductor technologies.

Currently, major players in the FOPLP advanced packaging field include Powertech Technology, ASE Group, SPIL, TSMC, Innolux, JSnepes, and Samsung Electro-Mechanics.

TrendForce points out that FOPLP technology presents advantages and disadvantages. Its main strengths are lower unit cost and larger package size, but as its technology and equipment systems are still developing, the commercialization process is highly uncertain.

It is estimated that the mass production timeline for FOPLP in consumer IC and AI GPU may fall between the second half of 2024 to 2026, and 2027-2028, respectively.

Read more

• [News] ACM Research Steps into FOPLP Advanced Packaging Field
• [News] TSMC Reportedly Forms a Team on FOPLP Development, with Mini Line on the Road 

(Photo credit: ACMR)

While Samsung Electronics is said to be delivering an oversea workforce cut up to 30%, a report from Korean media outlet Business Korea on September 11th has added that persistent issues with its 2nm yield rate have led Samsung to decide to withdraw personnel from its Taylor, Texas plant, signaling another setback for its advanced wafer foundry business.

Originally envisioned as a mass production hub for advanced processes below 4nm, the Taylor facility’s strategic location near major tech companies was intended to attract U.S. clients. However, despite rapid development, Samsung continues to face 2nm yield issues, resulting in performance and production capacity falling short of its main competitor, TSMC.

Reportedly, Samsung’s wafer foundry yield is below 50%, particularly in processes below 3nm, while TSMC’s advanced process yield is around 60-70%. This gap has widened the market share difference between the two companies.

As per a report from TrendForce, TSMC held a 62.3% share of the global wafer foundry market in the second quarter, while Samsung’s market share was only 11.5%.

Industry sources cited by Business Korea further added that Samsung’s Gate-All-Around (GAA) yield is around 10-20%, which is insufficient for handling orders and mass production. Such yields have forced Samsung to reconsider its strategy and withdraw personnel from the Taylor plant, leaving only a minimal number of staff.

Samsung Electronics had signed a preliminary agreement to receive up to KRW 9 trillion in subsidies from the U.S. Chips Act. However, a key condition for receiving the funding is that the plant must operate smoothly, and Samsung’s current difficulties put this agreement at risk.

Reportedly, Samsung Chairman Lee Jae-Yong personally visited major equipment suppliers like ASML and Zeiss, hoping to achieve breakthroughs in process and yield improvements. However, there have been no significant results so far, and it remains uncertain when personnel might be reassigned back to the Taylor plant.

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• [News] Samsung Reportedly Buckling Under Pressure, with Plans to Cut Overseas Workforce by Up to 30%
• [News] Samsung Signals Will to Collaborate with Other Foundries on Basedie

(Photo credit: Samsung)