The US government’s CHIPS and Science Act is reportedly injecting funds into chip manufacturing at an unprecedented rate. According to a recent report by the U.S. Census Bureau, the growth rate of construction funding for computer and electrical manufacturing is remarkably high. The amount of money the government is pouring into this industry in 2024 alone is equivalent to the total of the previous 27 years combined.

Due to the substantial funding provided by the U.S. CHIPS Act, the construction industry in the United States is experiencing explosive growth. Companies such as TSMC, Intel, Samsung, and Micron have received billions of dollars to build new plants in the U.S.

Research by the Semiconductor Industry Association indicates that the U.S. will triple its domestic semiconductor manufacturing capacity by 2032. It is also projected that by the same year, the U.S. will produce 28% of the world’s advanced logic (below 10nm) manufacturing, surpassing the goal of producing 20% of the world’s advanced chips announced by U.S. Commerce Secretary Gina Raimondo. 

Currently, new plant constructions are underway. Despite the enormous expenditures, there have been delays in construction across the United States, affecting plants of Samsung, TSMC, and Intel.

Notably, a previous report from South Korean media BusinessKorea revealed Samsung has postponed the mass production timeline of the fab in Taylor, Texas, US from late 2024 to 2026. Similarly, a report from TechNews, which cited a research report from the Center for Security and Emerging Technology (CSET), noted the postponement of the production of two plants in Arizona, US. Additionally, Intel, as per a previous report from the Wall Street Journal (WSJ), was also said to be delaying the construction timetable for its chip-manufacturing project in Ohio.

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(Photo credit: TSMC)

After naming its new head for the semiconductor business in May, claiming to strengthen the company’s competitiveness in cutting-edge chips, Samsung has now disclosed its latest developments regarding AI chips. According to information from Reuters and Samsung’s press release, the company plans to provide one-stop solution for clients to expedite their production of AI chips, while its updated 2nm node with backside power delivery is expected to enter the market in 2027.

According to a report from Reuters, the semiconductor giant plans to provide a turn-key solution by integrating its leading services in memory chips, foundry, and chip packaging to capitalize on the AI surge. The production time needed for AI chips usually takes weeks, while under this scheme, it could potentially be reduced by approximately 20%.

Driven by the strong demand from AI chips, Samsung expects the revenue of global chip industry to grow to USD 778 billion by 2028, according to Siyoung Choi, President and General Manager of the Foundry Business in Samsung, the report noted.

On the other hand, the tech heavyweight has introduced on 13^th June its latest developments on 2nm and GAA technologies, as tools to empower its AI solutions.

According to Samsung’s press release, its latest 2nm process, SF2Z, has incorporated optimized backside power delivery network (BSPDN) technology, which places power rails on the backside of the wafer to eliminate bottlenecks between the power and signal lines, and thus does better in PPA (power, performance and area), IR drop and performance of HPC designs compared to SF2, its first-generation 2nm node.

Samsung targets mass production for SF2Z in 2027, while SF4U, a high-value 4nm variant, is slated for mass production in 2025. It also confirms that preparations for SF1.4 (1.4nm) are progressing well, with performance and yield targets on track for mass production in 2027, the press release noted.

Regarding the progress on backside power delivery solution, TSMC’s Super PowerRail, which is expected to be used in A16 process, targets mass production in 2025. Intel’s PowerVia on its 20A process, on the other hand, is set for production in 2024.

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(Photo credit: Samsung)

Earlier, a report from a Japanese media outlet The Daily Industrial News indicated that memory giant Micron planned to build a new DRAM plant in Hiroshima, with construction scheduled to begin in early 2026 and aiming for completion of plant buildings and first tool-in by the end of 2027.

According to industry sources cited by TechNews, Micron is expected to invest between JPY 600 to 800 billion in the new facility, located adjacent to the existing Fab15 facility. Initially, the new plant will focus on DRAM production, excluding backend packaging and testing, with a capacity emphasis on HBM products.

Micron’s new Hiroshima plant will be the first to adopt Extreme Ultraviolet (EUV) lithography equipment, producing new advanced 1-Gamma process DRAM developed in collaboration between Taiwan and Japan. Subsequently, it will also transition to the 1-Delta process, leading to a significant increase in EUV tool-ins and heightened cleanroom facilities.

As for Fab 15 in Hiroshima, it serves as a mass production site for HBM, handling front-end wafer production and Through-Silicon Via (TSV) processes, while back-end stacking and testing processes are managed by the Taichung back-end plant in Taiwan. Market reports cited by TechNews also suggest that due to expanding demand for HBM, Micron’s facilities in Taiwan will commence HBM production and TSV processes starting next year.

TrendForce points out that due to robust growth in the HBM market, lower production yields, larger chip sizes, and other factors, producing the same bit output in HBM requires approximately three times the wafer input compared to DDR5, potentially squeezing traditional DRAM capacity.

Given Micron’s need to accelerate its penetration into the HBM market, and with its 2025 production capacity already fully booked by customers, the construction of a new plant becomes imperative. Micron also plans to maintain its HBM product line market share at 20% to 25% by 2025, eyeing on increasing it to match traditional DRAM levels.

The new Hiroshima plant has also received subsidies from the Japanese government. In October last year, Japan’s Ministry of Economy, Trade and Industry announced subsidies totaling JPY 192 billion for Micron’s construction and equipment expenses. Additionally, subsidies of up to JPY 8.87 billion for production costs and JPY 25 billion for research and development costs were provided.

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(Photo credit: Micron)

With the United States expected to further restrict China from acquiring advanced GAA (Gate-All-Around) chip architecture capabilities, coupled with reports of poor yield rates in Samsung’s 3nm GAA generation, the semiconductor industry sources cited in a report from Commercial Times state that TSMC’s 3nm FinFET process is enjoying dominance. Reportedly, due to the high demand and limited supply capacity, upstream IC design companies are beginning to report price hikes.

Seven global tech giants, including NVIDIA, AMD, Intel, Qualcomm, MediaTek, Apple, and Google, are set to gradually adopt TSMC’s 3nm process. As per the sources cited in the report from Commercial Times, Qualcomm’s Snapdragon 8 Gen 4, built using TSMC’s N3E process, has seen a price increase of 25% compared to the previous generation, potentially triggering a subsequent trend of price hikes.

Samsung was the first to commence mass production of 3nm chips using the GAA process in June 2022. However, the first-generation N3 node, SF3E, did not achieve significant success and was initially limited to cryptocurrency applications. Subsequently, the yield rate for its own Exynos 2500 chip also fell short of expectations.

Additionally, Google’s Tensor processors, which are manufactured by Samsung, still use Samsung’s 4nm process in their fourth generation. However, it is said in the report that the fifth generation will switch to TSMC’s 3nm process.

In the second half of the year, numerous AI products will be launched in the consumer market. Among the three major players in the mobile chip market, Qualcomm’s Snapdragon 8 Gen 4, MediaTek’s Dimensity 9400, and Apple’s A18 and M4 series will all be built using TSMC’s N3 family. Moreover, Google’s Tensor G5 will also compete in the market.

It is rumored that Qualcomm’s Snapdragon 8 Gen 4 has already initiated the first wave of price increases. The industry sources cited in the report claim that the procurement cost of mobile chips was already high, with last year’s flagship 8 Gen 3 costing around USD 200. This year’s flagship chip might exceed USD 250. Whether competitors will follow suit remains to be seen.

However, industry sources cited by the report also point out that the price increase is within a reasonable range. Compared to the 5nm process, the cost per wafer for the 3nm process is about 25% higher. This increase does not yet take into account overall wafer quantities and design architecture factors.

TSMC President C.C. Wei has also revealed that TSMC products are highly power-efficient and have better yield rates. When considering the cost per chip, TSMC is the most cost-effective.

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(Photo credit: TSMC)

SK hynix, as the market leader in HBM, targets to begin mass production of its GDDR7 chips in the fourth quarter of 2024, the company said on 13th June.

In the meantime, Micron also announced the launch of its GDDR7 graphics memory at Computex, which is currently being sampled. According to AnandTech, Micron not only plans to start mass production for GDDR7 this year, but also aims to do so early enough for some customers to ship finished products by year-end, with major applications range from AI and gaming to high-performance computing.

Samsung, on the other hand, is the first among the Big Three to present its GDDR7 products. According to its press release, Samsung has completed development of the industry’s first GDDR7 DRAM in July, 2023, a 16-gigabit  product, after its development of the industry’s first 24Gbps GDDR6 DRAM in 2022. According to AnandTech, Samsung is already sampling GDDR7 memory with the aim of launching it in 2024.

According to a report from AnandTech, SK hynix already has sample chips available for partners to test. Currently, the company plans to produce both 16Gbit and 24Gbit chips, with data transfer rates of up to 40 GT/s. As Samsung and Micron both expect to begin with 16Gbit chips running at 32 GT/s for their GDDR7 products, whether SK hynix could win customers’ favor by its faster speed attracts attention, AnandTech noted.

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(Photo credit: SK hynix)