On May 21st, Samsung Electronics announced that Young Hyun Jun will take over as the head of the Device Solutions (DS) division, replacing the current leader, Kyung Kye-Hyun, who will now lead the Samsung Advanced Institute of Technology (SAIT) and the Future Business Division, overseeing the company’s global operations of the Memory, System LSI and Foundry business units.

Young Hyun Jun initially joined Samsung Electronics in 2000, focusing on the development and strategic marketing of DRAM and flash memory. He has been in charge of the memory business since 2014, served as CEO of Samsung SDI, the battery division, in 2017, and led the Future Business Division starting in 2024.

In the press release, Samsung expressed confidence that Young Hyun Jun will strengthen its competitiveness amid an uncertain global business environment.

Upon approval by the board of directors and shareholders, Young Hyun Jun will also be appointed as CEO of Samsung. Samsung employs a dual CEO system, with one CEO responsible for the semiconductor division and the other for the device experience division, which includes the mobile and visual display business groups.

At the time of this personnel announcement, Samsung is striving to catch up with its competitor SK Hynix in the AI memory sector. SK Hynix currently leads the market for high bandwidth memory (HBM), a crucial component for AI computing. SK Hynix previously stated that its HBM production capacity for this year and next year is already sold out.

TrendForce has analyzed that the current HBM3 supply for NVIDIA’s H100 solution is primarily met by SK hynix, leading to a supply shortfall in meeting burgeoning AI market demands. Samsung’s entry into NVIDIA’s supply chain with its 1Znm HBM3 products in late 2023, though initially minor, signifies its breakthrough in this segment.

Whether Samsung, led by Young Hyun Jun with his extensive memory experience, can regain ground in its competition with SK Hynix is under close observation.

Per a report from Reuters, a source has noted that since Samsung’s personnel changes typically occur at the beginning of the year, it is unusual to replace a high-ranking executive like this in the middle of the year.

Read more

• [News] HBM Boom May Lead to DRAM Shortages in the Second Half of the Year
• [News] Samsung Reportedly to Challenge Apple/TSMC with 3nm Exynos W1000

(Photo credit: Samsung)

Memory giants Samsung, SK Hynix, and Micron are all actively investing in high-bandwidth memory (HBM) production. Industry sources cited in a report from Commercial Times indicate that due to capacity crowding effects, DRAM products may face shortages in the second half of the year.

According to TrendForce, the three largest DRAM suppliers are increasing wafer input for advanced processes. Following a rise in memory contract prices, companies have boosted their capital investments, with capacity expansion focusing on the second half of this year. It is expected that wafer input for 1alpha nm and above processes will account for approximately 40% of total DRAM wafer input by the end of the year.

HBM production will be prioritized due to its profitability and increasing demand. Regarding the latest developments in HBM, TrendForce indicates that HBM3e will become the market mainstream this year, with shipments concentrated in the second half of the year.

Currently, SK Hynix remains the primary supplier, along with Micron, both utilizing 1beta nm processes and already shipping to NVIDIA. Samsung, using a 1alpha nm process, is expected to complete qualification in the second quarter and begin deliveries mid-year.

The growing content per unit in PCs, servers, and smartphones is driving up the consumption of advanced process capacity each quarter. Servers, in particular, are seeing the highest capacity increase—primarily driven by AI servers with content of 1.75 TB per unit. With the mass production of new platforms like Intel’s Sapphire Rapids and AMD’s Genoa, which require DDR5 memory, DDR5 penetration is expected to exceed 50% by the end of the year.

As HBM3e shipments are expected to be concentrated in the second half of the year—coinciding with the peak season for memory demand—market demand for DDR5 and LPDDR5(X) is also expected to increase. With a higher proportion of wafer input allocated to HBM production, the output of advanced processes will be limited. Consequently, capacity allocation in the second half of the year will be crucial in determining whether supply can meet demand.

Samsung expects existing facilities to be fully utilized by the end of 2024. The new P4L plant is slated for completion in 2025, and the Line 15 facility will undergo a process transition from 1Y nm to 1beta nm and above.

The capacity of SK Hynix’s M16 plant is expected to expand next year, while the M15X plant is also planned for completion in 2025, with mass production starting at the end of next year.

Micron’s facility in Taiwan will return to full capacity next year, with future expansions focused on the US. The Boise facility is expected to be completed in 2025, with equipment installations following and mass production planned for 2026.

With the expected volume production of NVIDIA’s GB200 in 2025, featuring HBM3e with 192/384GB specifications, HBM output is anticipated to nearly double. Each major manufacturer will invest in HBM4 development, prioritizing HBM in their capacity planning. Consequently, due to capacity crowding effects, there may be shortages in DRAM supply.

Read more

• HBM3e Production Surge Expected to Make Up 35% of Advanced Process Wafer Input by End of 2024, Says TrendForce
• [News] DRAM Price Surge Halts, Could HBM Demand Drive Price Increases?

(Photo credit: Samsung)

According to reports from Korean news outlet FN News and Wccftech, aiming to win back NVDIA as a major customer, Samsung has made it a priority to secure chip order from the GPU heavyweight this year. To achieve this, Samsung is reportedly doing everything possible to ensure the company’s 3nm process node, which uses GAA (Gate-All-Around) architecture, meets NVIDIA’s requirements.

Sources quoted by the reports indicated that Samsung has implemented an internal strategy called “Nemo,” specifically targeting NVIDIA. Its foundry now plans to commence mass production of the 3nm GAA process in the first half of 2024. The GAA technology is expected to overcome significant bottlenecks associated with the previous FinFET processes, but it is still uncertain if this will be sufficient to persuade NVIDIA.

NVIDIA has been cooperating with TSMC in advanced process nodes for developing its GPUs for quite a while, both in consumer and data center markets. The tech giant’s latest GPU families, including Ada Lovelace, Hopper, and Blackwell, are all manufactured using TSMC’s 5nm (4N) processes, according to the aforementioned reports.

It’s important to note that NVIDIA last used Samsung’s 8nm process for its GeForce RTX 30 “Ampere” GPUs, designed for the gaming segment. However, the successor to Ampere, the Ada Lovelace “GeForce RTX 40,” switched to TSMC’s 5nm process.

Considering the high demand for NVIDIA’s GPUs, the chipmaker is expected to procure chips from multiple semiconductor fabs, which is simliar to its previous strategy of dual-sourcing HBM and packaging materials, according to Wccftech.

(Photo credit: Samsung)

Astera Labs, a leading provider of AI server connectivity solutions, has announced that it will gather Taiwanese manufacturers to establish its first Cloud-Scale Interop Lab outside of Silicon Valley in Taiwan. According to a report from Commercial Times, the company will closely collaborate with major Taiwanese ODM clients, while key manufacturers such as Quanta, Inventec, Wistron, Wiwynn, and Foxconn are expected to benefit from this initiative.

The emerging AI company Astera Labs has surpassed a market value of USD 10 billion and is renowned for providing high-speed transmission interface solutions for AI servers. Founded in 2017, the company celebrated its new public listing on NASDAQ this March.

Per a report from Business Today, the company, headquartered in California, USA, specializes in Retimer chips used for transmission in cloud data centers. These chips mitigate electronic signal attenuation issues, making them widely adopted in the market following PCIe Gen 5.

In response to the rapid expansion of the AI server market, Astera Labs is following in NVIDIA’s footsteps by establishing an R&D center, the Cloud-Scale Interop Lab, in Taiwan.

• • [COMPUTEX 2024] The Rise of Generative AI Sparks Innovation across Industries, with Taiwan-based Companies Leading as Essential Partners in the Global Supply Chain

(Photo credit: Astera Labs)

As AI-related semiconductors has been driving the demand of High Bandwidth Memory (HBM), the NAND flash market now also feels the vibe. According to industry sources cited by Business Korea, the NAND Flash market competition is intensifying, while memory giants Samsung and SK Hynix are ramping up their efforts to improve the performance and capacity of NAND products.

In April, Samsung confirmed that it has begun mass production for its one-terabit (Tb) triple-level cell (TLC) 9th-generation vertical NAND (V-NAND), boasted to improve the bit density by about 50% compared to the 8th-generation V-NAND, with the number of layers reaching 290, according an earlier report by The Korea Economic Daily.

Based on the report on May 20 by Business Korea, Samsung intends to dominate the AI SSD market with its 9th Generation V-NAND, targeting the development and sampling of ultra-high capacity 64 terabyte (TB) SSDs in the second quarter.

In mid-May, Samsung even revealed the target to release advanced NAND Flash with over 1000 layers by 2030. According to an earlier report by Wccftech, the South Korean memory giant plans to apply new ferroelectric materials on the manufacturing of NAND.

On the other hand, the current HBM3 supply for NVIDIA’s H100 solution is primarily met by SK Hynix, leading to a supply shortfall in meeting burgeoning AI market demands. After establishing its leadership in HBM, it is reported that SK Hynix now aims to dominate the AI memory market in NAND as well, according to Business Korea.

It is worth noting that SK Hynix recently achieved a breakthrough with the development of “Zoned UFS 4.0” (ZUFS 4.0), an on-device AI mobile NAND solution tailored for AI-capable smartphones, which is scheduled to start mass production in the third quarter, according to TheElec.

(Photo credit: Samsung)