According to TrendForce’s latest memory spot price trend report, neither DRAM nor NAND spot prices show much momentum. Regarding DRAM, spot prices are still falling as Samsung is increasing the amount of reball DDR5 (D1Y) chips that come from decommissioned modules. As for NAND flash, the spot market persists in sluggishness this week, where spot traders are continuously lowering their quotations. Details are as follows:

DRAM Spot Price:

In the spot market, prices are still falling as Samsung is increasing the amount of reball DDR5 (D1Y) chips that come from decommissioned modules. Since these reball chips are second-hand and low-cost products, Samsung can achieve profitability. However, this is leading to a continuous decline in spot prices, thereby affecting confidence across the entire DRAM market and buyers’ sentiment. Most buyers are now cautious and unwilling to actively stock up. The average spot price of the mainstream chips (i.e., DDR4 1Gx8 2666MT/s) decreased by 0.10% from US$1.972 last week to US$1.970 this week.

NAND Flash Spot Price:

The spot market for NAND Flash persists in sluggishness this week, where spot traders are continuously lowering their quotations to alleviate their pressure from inventory, though overall transaction dynamics are maintained at a lackluster level without apparent signs of recovery under unimproved end demand. Spot price of 512Gb TLC wafers dropped by 3.45% this week, arriving at US$3.075.

China’s exports rebounded in August, marking the highest increase in 17 months, as reported by the General Administration of Customs of China on September 10. The total export value, measured in USD, reached approximately $309 billion, representing an 8.7% year-on-year growth, surpassing both the previous month’s growth of 7% and the market’s expectations of 6.5%. Meanwhile, total imports amounted to around $200.9 billion, with a modest year-on-year growth of just 0.5%, significantly lower than the previous month’s 7.2% and the market’s forecast of 2%.

China’s economy currently shows a divergence between weak domestic demand and strong external momentum. However, as more countries, including the U.S., Canada, and the EU, increase trade barriers with China, combined with a global slowdown in consumer demand, future export growth may face greater challenges. At the same time, the continued weakness in import growth reflects sluggish domestic consumption, exacerbating deflationary risks. If China is to achieve its full-year GDP growth target of 5%, it may need to introduce stimulus policies aimed at boosting domestic consumption soon.

Read more at Datatrack

Less than 12 hours after Apple’s fall product launch, Huawei held its own event on the other side of the Pacific. As expected, they unveiled the world’s first tri-fold phone, the Mate XT. Its release date is also set to coincide with Apple’s, launching on September 20. As per a report from CNBC, after the launch event, the number of Mate XT pre-orders has already exceeded 4 million.

According to a report from Economic Daily News citing Richard Yu, Chairman of Huawei Consumer Business Group, the biggest breakthrough in Huawei’s tri-fold phone is its solution to screen and hinge technology, which enables both inward and outward folding simultaneously. This design enhances the screen’s resistance impact.

The phone’s thickness is only 0.36 cm, and the battery, at 0.19 cm, is considered the thinnest in the world. Meanwhile, the new model is said to support multiple AI applications, and offers satellite communication.

Huawei revealed that the price of the Mate XT ranges from CNY 19,999 to CNY 23,999, aligning with market expectations. Sources cited by Economic Daily News are optimistic about the potential of Huawei’s tri-fold phone, and Taiwanese company Fositek will benefit as the exclusive supplier of hinges, one of the most critical bearing components, for the Mate XT.

Yu emphasized that the production cost of this tri-fold device is extremely high, though it may decrease as manufacturing yield rates improve. He highlighted three key breakthroughs with this new phone: the tri-fold design, cutting-edge technology, and its alignment with future trends.

The timing of Huawei’s product launch coincided with Apple’s fall event, and the announcement of the tri-fold device drew attention once again as its release date, like Apple’s iPhone 16 series, is set for September 20. Huawei also chose the specific time of 10:08 AM to start sales.

Richard Yu introduced the Mate XT as the world’s first mass-produced tri-fold smartphone, featuring a 10.2-inch screen. The product took the R&D team five years to develop and is described as bringing sci-fi into reality.

Reportedly, it supports multiple uses, allowing users to switch between single, double, and triple fold for large-screen viewing. Along with the phone, Huawei also launched a foldable touch keyboard, embodying the concept of putting both a computer and a keyboard in your pocket.

Read more

• [News] Apple Officially Debuts iPhone 16 with AI Features, but Yet to Announce an AI partner in China
• [News] Huawei Expected to Unveil Mate70 and Foldable Device Following Apple’s iPhone 16 Release

(Photo credit: Huawei)

With the advent of the AI era, customer demand for high-performance NAND solutions such as SSDs for data centers, as well as ultra-fast DRAM chips including high bandwidth memory (HBM), is growing. In line with this trend, SK hynix has introduced a new product, PEB110 E1.S (PEB110), with improved data processing speed and power efficiency by applying the fifth-generation (Gen5) PCIe1 specifications.

It is worth noting that the new product builds on the company’s best-in-class 238-high 4D NAND, boasting the most competitive standards in the industry in terms of cost, performance and quality, according to Ahn Hyun, Head of the N-S Committee at SK hynix.

According to its press release, SK hynix is currently in the qualification process with a global data center customer, aiming to start mass production of the product in the second quarter of next year.

In its roadmap, the memory giant expects to meet diverse customer needs with a more robust SSD portfolio. Following the successful mass production of PS10102, it now introduces PEB110 E1.S (PEB110), a high-performance solid-state drive (SSD) for data centers.

According to SK hynix, PCle Gen5, which is applied to the new product, provides twice the bandwidth of the fourth generation (Gen4), enabling PEB110 to achieve data transfer rates of up to 32 gigatransfers per second (GT/s). This enables PEB110 to double the performance of the previous generation and improve power efficiency by more than 30%.

SK hynix has also applied the security protocol and data model technology, or SPDM, to PEB110, for the first time for its data-center SSDs to significantly enhance information security features.

SK hynix notes that the product will be released in three capacity versions—2 terabyte (TB), 4 TB, and 8 TB—and supports the OCP3 version 2.5 specifications for greater compatibility across global data centers.

Read more

• [News] SK hynix to Begin 12-Stack HBM3e Mass Production, Marking Key Moment in HBM Battlefield
• [News] SK Hynix President to Join Semicon Taiwan, Bolstering HBM Partnership with TSMC and NVIDIA

(Photo credit: SK hynix)

Recently, China has set two records in semiconductor chip sector: first, it mass-produced the world’s first 28nm embedded RRAM image quality adjustment chip; second, it developed the world’s first 16-bit quantum bit semiconductor microprocessor chip.

• Mass Production of the World’s First 28nm Embedded RRAM Image Quality Adjustment Chip

As per the official account of “Beijing Yizhuang,” the world’s first 28nm embedded RRAM (Resistive Random Access Memory) image quality adjustment chip, developed by Chinese semiconductor company Xianxin Technology in collaboration with domestic research institutes, has achieved mass production in Beijing and has been successfully applied in the high-end series of Mini LED televisions of leading brands in China.

It is reported that this 28nm display chip adopts the “digital chip + embedded RRAM” technology solution. Compared with the mainstream counterpart in the industry, which uses the “TCON + external FLASH memory,”  this chip effectively addresses issues like the high cost of external memory devices and the slow read speed of compensation parameters.

Furthermore, the chip integrates RRAM IP directly on the 28nm process node, enabling lower cost, smaller size, and higher efficiency.

Data shows that this mass-produced 28nm embedded RRAM image quality adjustment chip is not only the first domestically developed 28nm display chip in China but also the world’s first advanced commercial image quality adjustment chip to use 28nm embedded RRAM IP.

It possesses fully independent intellectual property rights. Its built-in RRAM memory module and core RRAM IP technology are derived from the transformation of research institute results, and the image quality adjustment algorithm is independently developed by Xianxin Technology.

• HKPU Develops a 16-bit Quantum Bit Semiconductor Microprocessor Chip

Recently, a research team from Hong Kong Polytechnic University (HKPU) successfully developed the world’s first 16-bit quantum bit semiconductor microprocessor chip, providing a novel solution for simulating large and complex molecular spectra.

HKPU explained that the team used a linear photonic network and compressed vacuum quantum light source to simulate molecular vibration spectra. This 16-bit quantum microprocessor chip is manufactured and integrated on a single chip.

In addition, the research team also developed a complete system, including optoelectronic thermal packaging for the quantum photonic microprocessor chip and control module, driver software and user interface, as well as programmable underlying quantum algorithms. The developed quantum computing system can be applied to different computational models.

The quantum microprocessor can be used to handle complex tasks, such as faster and more accurate simulations of large protein structures or optimizing molecular reactions.

Dr. Zhu Huihui, a postdoctoral researcher and the first author of the research paper, stated that this method can break through traditional limitations, enabling early practical molecular simulations and potentially achieving quantum acceleration in related quantum chemistry applications.

It is reported that, in addition to HKPU, other collaborative institutions include Nanyang Technological University, City University of Hong Kong, Beijing Institute of Technology, Southern University of Science and Technology, Institute of Microelectronics (IME), and Chalmers University of Technology in Sweden.

Read more

• [News] China’s Core AI Industry Achieved a Market Size of Nearly CNY 600 Billion
• [News] Nanjing, China Achieved Breakthrough in Manufacturing Key SiC Chip for the First Time

(Photo credit: Xianxin Technology)