On July 30, 2024, SK hynix announced the launch of next-generation memory product, GDDR7, with the world’s highest performance.

SK hynix explained that GDDR is characterized by the performance specifically designed for graphic processing and high-speed property, which has gaining an increasingly more traction from global AI application customers. In response to this trend, the company completed the development of the latest GDDR7 specifications in March this year, which was now officially launched and will achieve mass production in the third quarter of this year.

SK hynix’s GDDR7 features an operating speed of up to 32Gbps (32 gigabytes per second), which represents an increase of more than 60% compared to the previous generation, and can stand at 40Gbps depending on the usage environment. Built on the latest graphics card, it can support data processing speed of over 1.5TB per second, equivalent to processing 300 FHD (5GB) movies in one second.

In addition to providing faster speeds, GDDR7 boasts an energy efficiency 50% higher than the previous generation. To address chip heating issue caused by ultra-high-speed data processing, SK hynix adopted new packaging technology in the development of this product.

SK hynix’s technical team maintained the product size while increasing the heat-dissipating layers in the packaging substrate from four to six and used highly thermally conductive epoxy molding compound (EMC) in the packaging materials. As a result, the technical team successfully reduced the thermal resistance of the product by 74% compared to the previous generation.

Lee Sang-kwon, Vice President of SK hynix DRAM PP&E, said that SK hynix’s GDDR7 has achieved the highest performance of existing memory chips with excellent speed and energy efficiency, and its applications will expand from high-performance 3D graphics to AI, HPC, and autonomous driving.

Through this product, the company will further strengthen its high-end memory product line while developing into the most trustworthy AI memory solution company for customers.

Read more

• [News] GDDR7 Emerging as a New Driver for Memory Industry
• [News] SK hynix to Kick off Mass Production for GDDR7 in Q4 2024

(Photo credit: SK hynix)

As AI applications become more widespread, there is an urgent need to improve energy efficiency. Traditional AI processes are known as power-hungry due to the constant data transferring between logic and memory. However, according to the reports by Tom’s Hardware and Innovation News Network, researchers in the U.S. may have come up with a solution: computational random-access memory (CRAM), which is said to reduce energy consumption by AI by 1,000 times or more.

According to the reports, researchers at the University of Minnesota, after over 20 years of research, have developed a new generation of phase-change memory that can significantly reduce energy consumption in AI applications.

Citing the research, Tom’s Hardware explains that in current AI computing, data is frequently transferred between processing components (logic) and storage (memory). This constant back-and-forth movement of information can consume up to 200 times more energy than the actual computation.

However, with the so-called CRAM, data can be processed entirely within the memory array without having to leave the grid where it is stored. Computations can be performed directly within memory cells, eliminating the slow and energy-intensive data transfers common in traditional architectures.

According to Innovation News Network, machine learning inference accelerators based on CRAM could achieve energy savings of up to 1,000 times, with some applications realizing reductions of 2,500 and 1,700 times compared to conventional methods.

The reports note further that the patented technology is related to Magnetic Tunnel Junctions (MTJs), which are nanostructured devices used in hard drives, sensors, and various microelectronic systems, including Magnetic Random Access Memory (MRAM).

It is worth noting that among Taiwanese companies, NOR flash memory company Macronix may be the one with the most progress. According to a report by the Economic Daily, Macronix has been collaborating with IBM to develop the phase-change memory technology for over a decade, with AI applications as their main focus. Currently, Macronix is IBM’s sole partner for phase-change memory.

The report notes that the joint development program between Macronix and IBM is organized in three-year phases. At the end of each phase, the two companies decide whether to sign a new agreement based on the situation.

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• [News] MRDIMM/MCRDIMM to be the New Sought-Afters in Memory Field

(Photo credit: npj Unconventional Computing)

As the Bank of Japan (BoJ) will hold its monetary policy meeting on Wednesday, July 31, the market is primarily focused on whether BoJ will raise interest rates again after its last hike in March. The hawkish expectation stems from the continuous depreciation of the yen, which has led to a decline in Japanese purchasing power and weak consumer spending. Under such pressure, the BoJ might be compelled to raise rates. …

The iPhone SE series is Apple’s budget-friendly option, traditionally sourcing screens exclusively from the Chinese manufacturer BOE. However, a report from Korean media outlet The Elec indicated that Apple is expected to use LG Display (LGD) as the second supplier for the OLED screens of next year’s iPhone SE 4, while BOE remains the primary supplier for the iPhone SE 4 screens.

The iPhone SE series typically uses parts from older models but is unique in pairing them with the latest processors, ensuring superior performance compared to competitors in the same price range. Notably, Apple releases the iPhone SE series in emerging markets like India.

Per the same report from The Elec, the iPhone SE 4 is expected to use the OLED display from the iPhone 13, making it easier for display manufacturers to produce.

Apple has historically supported BOE as an iPhone OLED screen supplier to reduce the influence of South Korean companies like Samsung Display and LGD. However, BOE is said to have faced difficulties in securing large iPhone orders due to challenges in meeting Apple’s perforated screen technology requirements, as seen with the iPhone 15.

Moreover, BOE is reportedly encountering challenges in producing OLED screens for the iPhone 16 as well, resulting in lower output compared to its Korean competitors.

Earlier in May this year, both LG Display and Samsung Display secured orders for OLED panels for Apple’s iPhone 16 Pro, according to a previous report from “The Elec.” Subsequently, LG Display also has acquired orders for iPhone 16 Pro Max panels, which could be the first time ever for LG Display to be ahead of Samsung display.

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• [News] Novatek’s Supply Advantage Fades, as Korean Competitor Reportedly Secures iPhone 16 Order
• [News] Taiwanese IC Design Company Novatek Reportedly Secured a Spot in iPhone 16 via Collaboration with LGD

(Photo credit: Apple)

According to a report from Commercial Times, after suffering a multi-billion-dollar loss in its foundry business, Intel has recruited Naga Chandrasekaran, a veteran responsible for process technology development at Micron, as its Chief Operating Officer.

Intel is reportedly facing setbacks in developing chip manufacturing. After experiencing a staggering USD 7 billion loss in its foundry business in 2023, the company incurred an additional USD 2.5 billion loss in the first quarter of this year.

Thus,to drive the growth of its foundry business, Intel has recruited Naga Chandrasekaran from Micron, who will oversee all of Intel’s manufacturing operations and report directly to CEO Pat Gelsinger.

Chandrasekaran’s appointment will take effect on August 12. He will oversee Intel Foundry’s global manufacturing operations and strategic planning, including assembly and test manufacturing, wafer fabrication, and supply chain management. Essentially, Chandrasekaran will be responsible for all of Intel’s manufacturing activities.

In the announcement of the employment, Intel CEO Pat Gelsinger noted, “Naga is a highly accomplished executive whose deep semiconductor manufacturing and technology development expertise will be a tremendous addition to our team.”

“As we continue to build a globally resilient semiconductor supply chain and create the world’s first systems foundry for the AI era, Naga’s leadership will help us to accelerate our progress and capitalize on the significant long-term growth opportunities ahead,”  Gelsinger said.

As per a report from tom’s hardware, Chandrasekaran has spent over 20 years at Micron, holding various management positions. Most recently, he led global technology development and engineering focused on scaling memory devices, advanced packaging, and emerging technology solutions. His extensive background encompasses process and equipment development, device technology, and mask technology.

He will replace Keyvan Esfarjani, who is set to retire at the end of the year. Esfarjani, who has served at Intel for nearly 30 years, will remain with the company to assist with the transition. He has made significant contributions to Intel’s global supply chain resilience and manufacturing operations.

On the other hand, in an attempt to narrow down the gap with TSMC, Intel is also said to be recruiting the foundry giant’s senior engineers for its foundry division, according to a report by Commercial Times.

Read more

• [News] TSMC and Intel Boost Their 2025 Capital Spending to Lead in the AI Era
• [News] New Battleground for TSMC, Samsung & Intel in Panel-Level Packaging

(Photo credit: Intel)