After forming a new HBM development team within its Device Solutions (DS) Division around July, memory Giant Samsung is now said to have made progress on HBM4, targeting to tape-out the product by the end of this year, a report by TheElec notes. The move is also regarded to be laying the foundation stone for the mass production of its 12-layer HBM4 product by the end of 2025, according to the report.

The report suggests that as the time span between tape-out and finalizing test products might take three to fourth months, Samsung’s HBM4 test products are expected to be released next year at the earliest. Afterwards, Samsung would continue to make improvements until sending samples to key customers.

Samsung, however, declined to comment on its roadmap, according to TheElec.

The report by TheElec further notes that starting from HBM4, Samsung plans to mass-produce the logic die of HBM on its 4nm foundry process. Regarding the memory chip, Samsung is said to adopt the 10nm 6th-generation (1c) DRAM.

Samsung’s major HBM competitor, SK hynix, is reported to enter mass production for its 12-layer HBM4 in the second half of 2025, the report indicates. The company plans to mass-produce the logic die of HBM with TSMC’s 5nm and 12nm processes. As for the memory chip, it is still weighing between 1b DRAM and 1c DRAM.

As Samsung plans to use 1c DRAM in HBM4 core chips, related investments are expected to follow. TrendForce reports that Samsung’s P4L facility will be the key site for expanding memory capacity starting in 2025, starting with NAND production. Equipment installation for DRAM is expected to begin in mid-2025, with mass production of 1c nanometer DRAM slated to commence in 2026.

Samsung’s fifth generation HBM, HBM3e, is still striving on the certification process with NVIDIA. TrendForce notes that as the company is eager to gain higher HBM market share from SK hynix, its 1alpha(1α) capacity has reserved for HBM3e. TrendForce believes that Samsung is going to be a very important supplier on HBM category.

Read more

• [News] Samsung Reportedly to Bring in High-NA EUV Machine as soon as Year-End, as SK hynix Targets 2026
• [News] Samsung Likely Emerges as the Pacemaker for the AI Market if It Secures HBM3e Supply to NVIDIA

(Photo credit: Samsung)

According to a report from Nikkei, Samsung Electronics, currently lagging behind SK hynix in the HBM market, is said to be betting on the next-generation CXL memory, with shipments expected to begin in the second half of this year, while anticipating the CXL memory to become the next rising star in AI.

CXL is a cache-coherent interconnect for memory expansion, which may maintain memory coherency between the CPU memory space and memory on attached devices, which allows resource sharing for higher performance.

The CXL module stacks DRAM layers and connects different semiconductor devices like GPUs and CPUs, expanding server memory capacity up to tenfold.

Choi Jang-seok, head of Samsung Electronics’ memory division, explained that CXL technology is comparable to merging wide roads, enabling the efficient transfer of large volumes of data.

As tech companies rush to develop AI models, existing data centers are gradually becoming unable to handle the enormous data processing demands.

As a result, companies are beginning to build larger-scale data centers, but this also significantly increases power consumption. On average, the energy required for a general AI to answer user queries is about ten times that of a traditional Google search.

Choi further highlighted that incorporating CXL technology allows for server expansion without the need for physical growth.

In 2021, Samsung became one of the first companies in the world to invest in the development of CXL. This June, Samsung announced that its CXL infrastructure had received certification from Red Hat.

Additionally, Samsung is a member of the CXL Consortium, which is composed of 15 tech companies, with Samsung being the only memory manufacturer among them. This positions Samsung to potentially gain an advantage in the CXL market.

While HBM remains the mainstream memory used in AI chipsets today, Choi Jang-seok anticipates that the CXL market will take off starting in 2027.

Since the surge in demand for NVIDIA’s AI chips, the HBM market has rapidly expanded. SK hynix, which was the first to develop HBM in 2013, has since secured the majority of NVIDIA’s orders, while Samsung has lagged in HBM technology.

Seeing Samsung’s bet on CXL, SK Group Chairman Chey Tae-won remarked that SK Hynix should not settle for the status quo and immediately start seriously considering the next generation of profit models.

Read more

• News] TSMC Reportedly Invests over USD 12.3 Billion in EUV, Advancing in 2nm Production
• [News] Intel Secures First Batch of High-NA EUV Equipment from ASML, Ahead of Samsung and SK Hynix

(Photo credit: Samsung)

The University of Michigan released its Consumer Sentiment Index on August 16th, showing a preliminary reading of 67.8 for August, up slightly by 1.4 points from 66.4 in the previous month. The report indicates that with Kamala Harris replacing Joe Biden as the Democratic presidential nominee, confidence among Democratic supporters rose by 6%, while confidence among Republican supporters fell by 5%.

Regarding future economic developments, 41% of consumers believe that Harris would better support economic growth, while 38% favor Trump. Before Biden’s withdrawal, Trump had a 5-point lead over Biden in terms of economic development.

Overall, the dynamics of the presidential election seem to have a certain impact on consumers’ future expectations, as their outlook for personal finances and the economy over the next five years has reached its highest level in nearly four months.

Despite the increasing focus on the U.S. election, inflation remains the most important issue for consumers. One-year inflation expectations remain at 2.9%, unchanged from the previous month, and within the pre-pandemic range of 2.3% to 3.0%. Long-term inflation expectations have also remained steady at 3.0% for the past five months, slightly above the pre-pandemic range of 2.2% to 2.6%.

On August 13, Google officially released the Pixel 9 series of smartphones, featuring Google’s latest self-developed Tensor G4 processor and advanced AI function supported by Gemini AI.

Google Pixel 9 series includes three full-screen smartphones: Pixel 9, Pixel 9 Pro, and Pixel 9 Pro XL, as well as a foldable smartphone, the Pixel 9 Pro Fold.

Both Pixel 9 and Pixel 9 Pro are equipped with 6.3-inch screens, with the Pixel 9 Pro using a better LTPO screen; Pixel 9 Pro XL is fitted with a 6.8-inch screen; Pixel 9 Pro Fold’s internal screen size increased from 7.6 inches to 8 inches, and the external display screen size from 5.8 inches to 6.3 inches.

The base memory capacity of the new phones is up to 12GB, with the two Pro models and the Pixel 9 Pro Fold offering 16GB of memory.

It is learned that the Tensor G4 adopted in Google’s new phones is based on Samsung’s 4nm process (4LPP+), boasting a 3.1GHz Arm Cortex-X4 super core, three 2.6GHz Arm Cortex-A720 large cores, and four 1.92GHz Arm Cortex-A520 small cores.

Moreover, Tensor G4 is equipped with the new Samsung Exynos Modem 5400 baseband chip (Outside the processor), supporting 4G/5G, WiFi-7, Bluetooth 5.x, and satellite connectivity. The memory used is LPDDR5X, and media decoding supports formats such as H.264, H.265, VP9, and AV1.

Read more

• [News] Google’s Tensor G5 Reportedly Manufactured with TSMC’s 3nm and InFO-POP Packaging
• [News] Google Reportedly Shifts Orders from Samsung to TSMC for Its Upcoming Tensor G5 in the Pixel 10 Series

(Photo credit: Google)

As semiconductor giants, starting with Intel and TSMC, have been bringing in ASML’s High-NA EUV (high-numerical aperture extreme ultraviolet) equipment to accelerate the development in advanced nodes, the elite group has now reportedly been added two new members: Samsung and SK hynix.

According to the reports by Korean media outlet Sedaily and ZDNet, Samsung Electronics’ semiconductor (DS) division is said to bring in High-NA EUV equipment as early as the end of 2024. SK hynix’s High-NA equipment, which is expected to be applied to the mass production of advanced DRAM, will reportedly be introduced in 2026.

Samsung to Introduce First High-NA EUV Machine as soon as Year-End, Eyeing Full Commercialization by 2027

Sedaily, citing industry sources on August 13^th, notes that Samsung is expected to begin bringing in its first High-NA EUV equipment, ASML’s EXE:5000, between the end of this year and the first quarter of next year. It is worth noting that Samsung’s first High-NA EUV equipment is likely to be used for foundry operations, the report reveals.

Among the semiconductor heavyweights which have been advancing in the foundry business, Intel is the first to order new High-NA EUV machines from ASML. In May, Intel was said to have secured its first batch of the new High-NA EUV lithography equipment from ASML, which the company will allegedly use on its 18A (1.8nm) and 14A (1.4nm) nodes.

TSMC, on the other hand, is more concerned on the new machine’s expensiveness, as it might be priced at as much as EUR 350 million (roughly USD 380 million) per unit, according to a previous report by Bloomberg. However, the report, citing ASML’s spokesperson, confirmed that the Dutch chip equipment giant will ship High-NA EUV equipment to TSMC by the end of this year.

Now, following its two major rivals in the foundry sector, Samsung, by introducing High-NA EUV equipment as soon as year-end, aims to boost its competitive edge in the advanced nodes.

As the installation process is quite time-consuming, Samsung aims for the full commercialization of High-NA by 2027, supported by its efforts to build the related ecosystem, the report says.

According to the report, Samsung is working with electronic design automation (EDA) companies to design new types of masks, including curved (curvilinear) circuits for High-NA EUV that improve the sharpness of the printed circuits on wafers. This collaboration includes companies like Synopsys, a global leader in semiconductor EDA tools.

SK hynix’s High-NA EUV Reportedly to be Applied to 0a DRAM Production

According to the report by Sedaily, ASML has produced eight EXE:5000 High-NA EUV units currently, as Intel has the lion’s share by securing multiple units. Samsung is said to be the last customer to place the order for ASML’s first batch of units.

On the other hand, SK hynix, Samsung’s major rival in the memory sector, is reported to bring in ASML’s next generation of High-NA EUV machine, the EXE:5200, in 2026, ZDNet suggests.

Citing industry sources on August 16th, ZDNet notes that the HBM giant has been expanding the personnel dedicated to High-NA EUV development within the company.

Although specific plans, such as the fab where the equipment will be installed or the direction of additional investment, have not been disclosed, it is expected that the technology could be applied to mass production in 0a (single-digit nanometer) DRAM as early as possible, the report indicates.

Read more

• News] TSMC Reportedly Invests over USD 12.3 Billion in EUV, Advancing in 2nm Production
• [News] Intel Secures First Batch of High-NA EUV Equipment from ASML, Ahead of Samsung and SK Hynix

(Photo credit: ASML)