According to a Reuters report on June 26th citing sources, with semiconductor market conditions rebounding and financial performance rapidly improving, NAND flash leader Kioxia is reportedly gearing up to file a preliminary application soon and aims to debut on the Tokyo Stock Exchange (TSE) through an initial public offering (IPO) by late October.

As per the same report citing sources, Kioxia plans to formally submit its IPO application by the end of August, aiming for a listing by late October. In order to meet the deadline, preparations are proceeding at a faster pace than usual for an IPO, although the timing may be subject to progress and could potentially be delayed until December. The sources further indicated that Bain Capital, a major shareholder of Kioxia, plans to sell part of its stake through the IPO to raise funds.

Kioxia previously obtained approval for listing on the Tokyo Stock Exchange in 2020 but postponed its IPO plans due to the US-China trade tensions and adverse market conditions. The source cited in the report mentioned that the funds raised through this IPO might be lower than its initial valuation in 2020.

Toshiba spun off its semiconductor business, which focused on NAND flash, in April 2017. The company is previously named “Toshiba Memory,” which was later renamed to “Kioxia” on October 1, 2019. Toshiba currently holds approximately 40% of Kioxia’s shares.

Previously on May 15th, the improved market environment is also reflected in Kioxia’s financial report for January to March 2024, where the company achieved a net profit of JPY 10.3 billion, ending six consecutive quarters of losses.

This turnaround was driven by improved pricing due to production cuts across various NAND Flash manufacturers, which balanced supply and demand. The consolidated operating profit improved from a loss of JPY 171.4 billion in the same period last year to a profit of JPY 43.9 billion, marking the first quarterly profit in six quarters. Notably, the demand for smartphone and personal computer chips has bottomed out and is starting to recover, while orders related to data centers have increased.

Looking ahead to market trends and future prospects, Kioxia pointed out the normalization of customer inventory levels, which is expected to drive recovery in demand for PC and smartphone applications. They anticipate future growth driven by the introduction of On-Device AI, increasing memory capacities, and potential upgrades in PC operating systems stimulating replacement demand.

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(Photo credit: Kioxia)

According to a report from South Korean media Maeil Business Newspaper, Samsung Electronics plans to raise prices for server DRAM and enterprise NAND flash by 15% to 20% in the third quarter due to surging demand for artificial intelligence (AI). This move is expected to improve the company’s performance in the second half of the year, while boosting momentum for some Taiwanese companies like Nanya Technology, ADATA, TeamGroup and Transcend in the coming quarters.

Industry sources cited by a report from Economic Daily News believe that with manufacturers defending prices, there is strong support for the market. Additionally, as the three major manufacturers focus on developing high-bandwidth memory (HBM), which limits the output of DDR4 and DDR3, it helps maintain a healthy state for the DRAM industry.

Per Maeil Business Newspaper, sources have revealed on June 26th that Samsung Electronics has recently notified major customers about the planned price increase. The Device Solutions (DS) division, responsible for Samsung’s semiconductor business, held a global strategy meeting at its Hwaseong plant in Gyeonggi-do on the same day, where this matter was discussed.

The report further stated that Samsung Electronics had already increased the prices of NAND flash supplied to enterprises by at least 20% in the second quarter, anticipating that the AI boom will drive higher server demand in the second half of the year.

According to data from DRAMeXchange, the global sales of enterprise NAND flash reached $3.758 billion in the first quarter of this year, marking a 62.9% increase from the previous quarter. With the rising demand, some products are experiencing shortages.

TrendForce also notes that with a slight improvement in server demand, Samsung has indicated it will adopt a more aggressive pricing strategy for server DRAM and enterprise SSDs for 3Q24 deals. TrendForce’s price projections posit that server DRAM prices are expected to increase by more than 10% QoQ, with enterprise SSDs enjoying a similar price range. However, due to sluggish smartphone demand, price increases in mobile categories are expected to be more modest.

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(Photo credit: Samsung)

Rumors have been circulating regarding Samsung’s 3nm yield recently. The latest market speculation on June 25^th alleged that Samsung’s foundry plant encountered a defect impacting 2,500 lots in the 3nm second-generation process, reportedly leading to a loss of 1 trillion won (USD 720 million), according to the latest report by the Chosun Daily.

On June 26^th, the semiconductor giant denied the rumors of a major defect in the production of semiconductor wafers at its foundry division in South Korea. Market speculations emerged earlier, suggesting that all the affected wafers, which equal to 2,500 lots, had to be discarded, the report noted. The volume corresponds to roughly 65,000 12-inch equivalent wafers per month.

According to the Chosun Daily, Samsung claimed that the rumor of “discarding them (the affected wafers) all” circulating in the stock market are unfounded. The current status of the products from the affected production line is still under evaluation, the report said.

Citing industry insiders familiar with the matter, the Chosun Daily noted that the reported figures might be exaggerated, pointing out that Samsung’s 3nm production capacity is less than 60,000 wafers per month. Furthermore, there are numerous inspection processes in place throughout the production line, indicating that such a large-scale defect may be improbable.

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• [News] Samsung’s 3nm Yield Reportedly Below 20%, Struggling for Mass Production

(Photo credit: Samsung)

On June 26, American memory manufacturer Micron announced its financial results for the third quarter of the 2024 fiscal year (ending May 30, 2024) after the market closed: revenue increased by 82% year-over-year (17% quarter-over-quarter) to $6.811 billion; Non-GAAP diluted earnings per share (EPS) were reported at $0.62, better than the $0.42 of the second quarter of the 2024 fiscal year and the diluted loss per share of $1.43 in the third quarter of the 2023 fiscal year.

Micron further estimates that for the fourth quarter of the 2024 fiscal year, revenue and Non-GAAP diluted EPS will be $7.6 billion (plus or minus $200 million) and $1.08 (plus or minus $0.08), respectively.

Per a Bloomberg report on June 26th, some sources expect Micron’s fourth-quarter revenue to exceed USD 8 billion.

Micron CEO Sanjay Mehrotra stated in a press release that the improving market conditions and strong price and cost execution drove the financial outperformance. Reportedly, Micron’s total fiscal Q3 revenue was USD 6.8 billion, up 17% sequentially and up 82% year over year.

Mehrotra also noted that Micron’s market share for high-margin AI-related product categories such as HBM (high-bandwidth memory), high-capacity DIMMs and data center SSDs continue to rise. Meanwhile, Micron is also gaining share in data center SSD, reaching new revenue and market share records in this important product category.

Mehrotra stated during the earnings call that strong AI-driven demand for data center products has led to tight capacity for advanced processes. Therefore, despite steady recent demand for personal computers (PCs) and smartphones, Micron expects prices to continue rising throughout 2024 (January to December).

Micron CEO Sanjay Mehrotra further addressed, “In the data center, rapidly growing AI demand enabled us to grow our revenue by over 50% on a sequential basis.” He then pointed out, “…we can deliver a substantial revenue record in fiscal 2025, with significantly improved profitability underpinned by our ongoing portfolio shift to higher-margin products.”

Looking ahead to 2025, the growing demand for AI PCs, AI smartphones, and data center AI creates a favorable environment, giving Micron confidence in achieving substantial revenue records in the 2025 fiscal year. This is expected to significantly boost profitability as the product mix continues to shift towards higher-margin products.

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(Photo credit: Micron)

After ending production cuts amidst a recovery in the memory industry, Kioxia disclosed its plans on the 3D NAND roadmap last week. According to reports from PC Watch and Blocks & Files, Kioxia stated that achieving a 1,000-layer level by 2027 would be possible.

According to the reports, the number of 3D NAND layers has generally increased from 24 in 2014 to 238 in 2022, representing a tenfold rise over eight years. Kioxia stated that achieving a 1,000-layer level by 2027 would be possible at a rate of increase of 1.33 times per year.

The Japanese memory chipmaker seems to be more ambitious than Samsung regarding the battle of layers. In May, Samsung revealed its target to release advanced NAND chips with over 1000 layers by 2030. According to Wccftech, the South Korean memory giant plans to apply new ferroelectric materials on the manufacturing of NAND to achieve this goal.

According to the latest analysis from TrendForce, Kioxia has benefited from the recovery of the memory industry, recently receiving subsidies from the Japanese government and additional financing from a consortium of banks. Furthermore, the company plans to launch an IPO by the end of the year. These measures have provided Kioxia with ample financial resources to pursue technological advancements and cost optimization.

TrendForce further notes that Kioxia has ambitious plans to achieve 1000-layer technology by 2027, which is the highest number of layers announced by any manufacturer so far. However, to reach the milestone, it will be necessary to transition from TLC (3 bits per cell) to QLC (4 bits per cell), and possibly even to PLC (5 bits per cell). The technical challenges involved are significant, and whether Kioxia can achieve this market milestone by 2027 remains to be seen.

The Battle of Layers between Memory Giants

Kioxia and its partner Western Digital showcased their 218-layer technology in 2023 following the 162-layer milestone. Its current announcement to achieve the 1000-layer technology by 2027 would be a huge leap from that.

The battle of layers between memory giants has been intensifying as other memory heavyweights had already surpassed the 200-layer milestone. Earlier in April, Samsung confirmed that it has begun mass production for its one-terabit (Tb) triple-level cell (TLC) 9th-generation vertical NAND (V-NAND), with the number of layers reaching 290, according an earlier report by The Korea Economic Daily. For now, the company aims to stack V-NAND to over 1000 layers by 2030.

SK Hynix unveiled the world’s highest-layer 321-layer NAND flash memory samples in August 2023, claiming to have become the industry’s first company developing NAND flash memory with over 300 layers, with plans for mass production by 2025. Micron has also started to mass produce its 232-layer QLC NANDs in 2024.

Uncertainties behind Kioxia’s Optimism

However, to Kioxia, there are more challenges to overcome, as technological obstacles and Western Digital’s stance add uncertainties to its ambition. According to the report from Blocks & Files, increasing density in a 3D NAND die involves more than just adding layers, as each layer’s edge must be exposed for memory cell electrical connectivity. This results in a staircase-like profile, and as the number of layers grows, the die area needed for the staircase expands as well.

Therefore, to increase density, it is necessary to shrink the cell size both vertically and laterally, and to raise the bit level as well. All these scaling factors, including layer counts, vertical cell size reduction, lateral cell size reduction, and cell bit level increases, present their own technological challenges.

Moreover, according to Blocks & Files, WD has concerns regarding the manufacturing capital costs and the return on investment from selling chips and SSDs made with the fabricated NAND dies.

Citing Western Digital EVP Robert Soderbery in June, the report noted that in the 3D era, NAND manufacturing requires higher capital intensity but offers a lower cost reduction as bit density increases. The company even described the situation as the “end of the layers race,” indicating that there would be a slowdown in the rate of NAND layer count increases to optimize capital deployment.

How long would the battle of layers continue, and how far would it go? Technological breakthroughs as well as the willingness to endure higher capital intensity while the cost reduction being relatively limited may be key.

Read more

• [News] NAND Flash Market Competition Intensifies, as SK Hynix, Samsung Strive to Meet AI Demand
• [News] With Memory Market Recovering, Kioxia Has Reportedly Ceased Production Cuts and Secured Bank Lending

(Photo credit: Kioxia)