Earlier, a report from a Japanese media outlet The Daily Industrial News indicated that memory giant Micron planned to build a new DRAM plant in Hiroshima, with construction scheduled to begin in early 2026 and aiming for completion of plant buildings and first tool-in by the end of 2027.

According to industry sources cited by TechNews, Micron is expected to invest between JPY 600 to 800 billion in the new facility, located adjacent to the existing Fab15 facility. Initially, the new plant will focus on DRAM production, excluding backend packaging and testing, with a capacity emphasis on HBM products.

Micron’s new Hiroshima plant will be the first to adopt Extreme Ultraviolet (EUV) lithography equipment, producing new advanced 1-Gamma process DRAM developed in collaboration between Taiwan and Japan. Subsequently, it will also transition to the 1-Delta process, leading to a significant increase in EUV tool-ins and heightened cleanroom facilities.

As for Fab 15 in Hiroshima, it serves as a mass production site for HBM, handling front-end wafer production and Through-Silicon Via (TSV) processes, while back-end stacking and testing processes are managed by the Taichung back-end plant in Taiwan. Market reports cited by TechNews also suggest that due to expanding demand for HBM, Micron’s facilities in Taiwan will commence HBM production and TSV processes starting next year.

TrendForce points out that due to robust growth in the HBM market, lower production yields, larger chip sizes, and other factors, producing the same bit output in HBM requires approximately three times the wafer input compared to DDR5, potentially squeezing traditional DRAM capacity.

Given Micron’s need to accelerate its penetration into the HBM market, and with its 2025 production capacity already fully booked by customers, the construction of a new plant becomes imperative. Micron also plans to maintain its HBM product line market share at 20% to 25% by 2025, eyeing on increasing it to match traditional DRAM levels.

The new Hiroshima plant has also received subsidies from the Japanese government. In October last year, Japan’s Ministry of Economy, Trade and Industry announced subsidies totaling JPY 192 billion for Micron’s construction and equipment expenses. Additionally, subsidies of up to JPY 8.87 billion for production costs and JPY 25 billion for research and development costs were provided.

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(Photo credit: Micron)

According to TrendForce’s latest memory spot price trend report, China’s 618 shopping festival has limited effects on demand, slowing down the digestion of existing inventory, causing DRAM and NAND Flash spot prices to slide further. However, DDR5 has been performing relatively better than older products such as DDR3 and DDR4 in sales. Details are as follows:

DRAM Spot Price:

Spot prices continue to decline. China’s 618 shopping festival is generating a more significant extent of purchase sentiment regarding smartphones due to huge price slashes, while other end products, having yet to exhibit any signs of recovery in demand, have slowed down the digestion of existing inventory. Generally speaking, DDR5 has been performing slightly better in sales, while older products, such as DDR3/4, are sustaining a larger decrement due to transitions of platforms. Mainstream packaged DDR4 1Gx8 2666MT/s saw a price drop of 0.84% (from US$1.904 to US$1.888) this week.

NAND Flash Spot Price:

Spot prices for NAND Flash are maintaining a slow depletion. The recent 618 e-commerce promotions have proven to be confined in efficacy towards overall market demand, where the enervation seen from transactions of consumer products continues to aggravate the inversion between contract and spot prices. 512Gb TLC wafer spots have dropped by 1.74% this week, arriving at US$3.328.

Recently, Samsung Electronics announced that the development of its 8nm eMRAM has almost been completed and process upgrades is underway as planned.

According to a report from WeChat account DRAMeXchange, as a new type of non-volatile memory technology based on magnetic principles, eMRAM falls under the category of embedded MRAM (Magnetoresistive random-access memory). Compared to traditional DRAM, eMRAM offers faster access speeds and higher durability. Unlike DRAM, it does not require data refreshing, and its write rate is 1000 times that of NAND.

Due to these characteristics, the industry holds a positive outlook on the potential of eMRAM, especially in scenarios that demand high performance, energy efficiency, and durability.

Samsung Electronics is one of the main producers of eMRAM and is dedicated to promoting its adoption in the automotive sector. In 2019, Samsung developed and mass-produced the industry’s first eMRAM based on 28nm FD-SOI. After achieving the production capability of 28nm eMRAM, Samsung reportedly plans to mass-produce 14nm eMRAM in 2024, 8nm in 2026, and 5nm in 2027.

Samsung is confident about the application of eMRAM in future automotive uses, stating that its product’s temperature tolerance has reached 150-160°C, which can fully meet the stringent requirements of the automotive industry for semiconductors.

In recent years, the proliferation of big data and artificial intelligence applications has generated massive memory demands and placed higher requirements for memory technologies. Against this backdrop, new memory technologies have continuously emerged, among which SCM (Storage Class Memory) is a representative, which combines high-speed read and write performance of DRAM with the persistent storage capability of NAND flash, potentially addressing issues of small capacity, volatility, and high cost associated with DRAM. Key SCM products include phase-change memory (PCM), resistive RAM (ReRAM), magnetoresistive RAM (MRAM), and nanotube RAM (NRAM).

Aside from Samsung, companies like Kioxia and ByteDance have also acted vigorously in the new memory field this year. In April, Kioxia’s CTO Hidefumi Miyajima stated that compared to competitors developing both NAND and DRAM, Kioxia is at a competitive disadvantage in terms of business diversity, making the cultivation of new memory product business like SCM a necessity. With this goal in mind, Kioxia reorganized its “Memory Technology Research Laboratory” into the “Advanced Technology Research Laboratory.”

In March, it was reported by South China Morning Post that ByteDance invested in a Chinese memory company Innostar, becoming its third-largest shareholder. Innostar focuses on the R&D of new memory technologies like ReRAM and related chip products covering three categories: high-performance industrial control/automotive-grade SoC/ASIC chip, computing-in-memory (CIM) IP, chip and system-on-memory (SoM) chip.

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(Photo credit: Samsung)

According to a report from a Japanese media outlet The Daily Industrial News, it reported that Micron Technology plans to build a new plant in Hiroshima Prefecture, Japan, for the production of DRAM chips, aiming to begin operations as early as the end of 2027.

The report estimates the total investment to be between JPY 600 billion and 800 billion (roughly USD 5.1 billion). Construction of the new plant is scheduled to begin in early 2026, with the installation of extreme ultraviolet (EUV) lithography equipment.

The Japanese government has approved subsidies of up to JPY 192 billion (roughly USD 1.3 billion) to support Micron’s production of next-generation chips at its Hiroshima plant. The Ministry of Economy, Trade and Industry stated last year that this funding would help Micron incorporate ASML’s EUV equipment, with these chips being crucial for powering generative AI, data centers, and autonomous driving technology.

Micron initially planned to have the new plant operational by 2024, but this schedule has evidently been adjusted due to unfavorable market conditions. Micron, which acquired Japanese DRAM giant Elpida in 2013, employs over 4,000 engineers and technicians in Japan.

Beyond 2025, Japan is set to witness the emergence of several new plants, including Micron Technology’s new 1-gamma (1γ) DRAM production facility in Hiroshima Prefecture.

JSMC, a foundry subsidiary of Powerchip Semiconductor Manufacturing Corporation (PSMC), is collaborating with Japan’s financial group SBI to complete construction by 2027 and begin chip production thereafter.

Additionally, Japanese semiconductor startup Rapidus plans to commence production of 2-nanometer chips in Hokkaido by 2027.

Japan’s resurgence in the semiconductor arena is palpable, with the Ministry of Economy, Trade, and Industry fostering multi-faceted collaborations with the private sector. With a favorable exchange rate policy aiding factory construction and investments, the future looks bright for exports.

However, the looming shortage of semiconductor talent in Japan is a concern. In response, there are generous subsidy programs for talent development.

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(Photo credit: Micron)

Memory giants Samsung, SK Hynix, and Micron are all actively investing in high-bandwidth memory (HBM) production. Industry sources cited in a report from Commercial Times indicate that due to capacity crowding effects, DRAM products may face shortages in the second half of the year.

According to TrendForce, the three largest DRAM suppliers are increasing wafer input for advanced processes. Following a rise in memory contract prices, companies have boosted their capital investments, with capacity expansion focusing on the second half of this year. It is expected that wafer input for 1alpha nm and above processes will account for approximately 40% of total DRAM wafer input by the end of the year.

HBM production will be prioritized due to its profitability and increasing demand. Regarding the latest developments in HBM, TrendForce indicates that HBM3e will become the market mainstream this year, with shipments concentrated in the second half of the year.

Currently, SK Hynix remains the primary supplier, along with Micron, both utilizing 1beta nm processes and already shipping to NVIDIA. Samsung, using a 1alpha nm process, is expected to complete qualification in the second quarter and begin deliveries mid-year.

The growing content per unit in PCs, servers, and smartphones is driving up the consumption of advanced process capacity each quarter. Servers, in particular, are seeing the highest capacity increase—primarily driven by AI servers with content of 1.75 TB per unit. With the mass production of new platforms like Intel’s Sapphire Rapids and AMD’s Genoa, which require DDR5 memory, DDR5 penetration is expected to exceed 50% by the end of the year.

As HBM3e shipments are expected to be concentrated in the second half of the year—coinciding with the peak season for memory demand—market demand for DDR5 and LPDDR5(X) is also expected to increase. With a higher proportion of wafer input allocated to HBM production, the output of advanced processes will be limited. Consequently, capacity allocation in the second half of the year will be crucial in determining whether supply can meet demand.

Samsung expects existing facilities to be fully utilized by the end of 2024. The new P4L plant is slated for completion in 2025, and the Line 15 facility will undergo a process transition from 1Y nm to 1beta nm and above.

The capacity of SK Hynix’s M16 plant is expected to expand next year, while the M15X plant is also planned for completion in 2025, with mass production starting at the end of next year.

Micron’s facility in Taiwan will return to full capacity next year, with future expansions focused on the US. The Boise facility is expected to be completed in 2025, with equipment installations following and mass production planned for 2026.

With the expected volume production of NVIDIA’s GB200 in 2025, featuring HBM3e with 192/384GB specifications, HBM output is anticipated to nearly double. Each major manufacturer will invest in HBM4 development, prioritizing HBM in their capacity planning. Consequently, due to capacity crowding effects, there may be shortages in DRAM supply.

Read more

• HBM3e Production Surge Expected to Make Up 35% of Advanced Process Wafer Input by End of 2024, Says TrendForce
• [News] DRAM Price Surge Halts, Could HBM Demand Drive Price Increases?

(Photo credit: Samsung)