As Samsung plans to unveil its next-gen flagship smartphone, Galaxy S25 series, in early 2025, more details regarding the product have surfaced. Months ahead of the launch, Samsung is said to abandon the dual-processor strategy and equip the entire series with Qualcomm’s new Snapdragon 8 Gen 4 processor. The latest rumor, however, may be related to the yield issue in its 1b DRAM intended to be used in the Galaxy S25 series.

According to a report by Korean media outlet ZDNet, the tech giant might be facing difficulties in its cutting-edge mobile DRAM, the 1b DRAM (5^th-generation 10nm-class DRAM). Last month, Samsung Electronics’ Mobile eXperience (MX) Division reportedly raised concerns with the Device Solutions (DS) Division about delays in the delivery of 1b-based LPDDR (low-power DRAM) samples.

Samsung has been developing 1b DRAM for a period of time, as the company is said to begin mass production of the 16Gb 1b DDR5 DRAM in May last year, ZDNet notes. Afterwards, Samsung started to develop the 32Gb 1b DRAM in September, targeting the high-performance computing (HPC) market, the report states.

Meanwhile, it has been working on developing 1b LPDDR products for mobile devices, primarily targeting the Galaxy S25 series.

However, recent issues seem to have disrupted these plans, the report suggests. It notes that while the DS Division was expected to deliver 1b LPDDR samples in various capacities, including 12Gb and 16Gb, to the MX Division by last month, they were unable to provide the necessary quantities due to yield problems.

Industry experts cited by the report indicate that semiconductors generally require a yield rate above 80% to support stable and cost-effective mass production and supply. While the exact yield rate of Samsung’s mobile 1b DRAM hasn’t been revealed, it is likely to fall well below the target, which prompts Samsung’s MX Division to reevaluate the schedule and the DRAM adoption plan, the report suggests.

According to a previous report by TheElec, though concerns have been raised regarding its 1b DRAM manufacturing, being ambitious on its HBM development, Samsung targets to tape out HBM4 by the end of this year, while it intends to adopt the 10nm 6th-generation (1c) DRAM to manufacture the memory chip.

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(Photo credit: Samsung)

According to TrendForce’s latest memory spot price trend report, regarding DRAM spot prices, since inventory levels are not excessively high, the selling pressure remains manageable. DDR4 products, though, have been suffering from the downward pressure more than DDR5. As for NAND flash, the spot market continues to sustain repercussions of sluggishness among consumer products. A number of brands are now pessimistic regarding how this wave of market enervation would persist until 1H25. Details are as follows:

DRAM Spot Price:

Due to an underwhelming peak season, spot sellers are under pressure to offload inventory, leading to a slight sell-off. However, since inventory levels are not excessively high, the selling pressure remains manageable. Meanwhile, Samsung has recently begun releasing reball DDR5 chips stripped from decommissioned modules at low prices. For instance, 2Gx8 (16Gb) chips are being sold for around US$3, contributing to the overall decline in spot prices. For DDR4 products, the plentiful supply of reball chips is exerting even more downward pressure compared with DDR5 products. Consequently, there is no sign of stabilization in spot prices. The average spot price of the mainstream chips (i.e., DDR4 1Gx8 2666MT/s) slightly decreased by 0.05% from US$1.973 last week to US$1.972 this week.

NAND Flash Spot Price:

The spot market continues to sustain repercussions of sluggishness among consumer products, where lackluster transactions are seen from client SSD, embedded products (eMMC & UFS), and memory cards. A number of brands are now pessimistic regarding how this wave of market enervation would persist until 1H25. Spot prices, compared to last week, have been continuously dropping at a small margin. Spot prices for 512Gb TLC wafers have dropped by 0.81% this week, arriving at US$3.185.

As per its official release, SK hynix has announced that it has developed the industry’s first 16Gb DDR5 built using its 1c node, the sixth generation of the 10nm process. Reportedly, it will be ready for mass production of the 1c DDR5 within the year to start volume shipment next year.

To reduce potential errors stemming from the procedure of advancing the process and transfer the advantage of the 1b, the company claims in the release that it extended the platform of the 1b DRAM for development of 1c.

As per the press release, the operating speed of the 1c DDR5, expected to be adopted for high-performance data centers, is improved by 11% from the previous generation, to 8Gbps.

With power efficiency also improved by more than 9%, SK hynix expects adoption of 1c DRAM to help data centers reduce the electricity cost by as much as 30% at a time when advancement of AI era is leading to an increase in power consumption.

Per a report from Businesskorea, the difficulty of advancing the shrinking process for 10nm-range DRAM technology has increased with each generation.

However, with the official release this time, SK hynix has become the first in the industry to overcome these technological limitations by achieving a higher level of design completion.

Per another report from Korea JooAng Daily, this marks a win for SK hynix, as its rival Samsung Electronics had previously outpaced it in the development of the 1b DRAM, which corresponds to nodes in the 12-nanometer range.

According to TrendForce’s latest memory spot price trend report, regarding DRAM spot prices, improvements are unlikely in the near term as reballed chip supply remains plentiful and DDR5 price pressure emerges. As for NAND flash, several suppliers have also lowered their official prices amidst ongoing sluggishness of demand. Details are as follows:

DRAM Spot Price:

The spot market has shown no signs of improvement this week and prices continue to fall. In addition to weak channel demand, the supply of reballed chips also remains plentiful. Moreover, a South Korean supplier has recently slightly increased its supply of DDR5 products to the spot market, generating more downward price pressure. Hence, improvements in current spot price trends are unlikely in the near term. The average spot price of the mainstream chips (i.e., DDR4 1Gx8 2666MT/s) dropped by 0.25% from US$1.978 last week to US$1.973 this week.

NAND Flash Spot Price:

Several suppliers have lowered their official prices amidst ongoing sluggishness of demand, and spot prices could continue to weaken if demand for consumer products remains lackluster. Spot prices for 512Gb TLC wafers have dropped by 0.71% this week, arriving at US$3.211.

Following TSMC’s recent acquisition of Innolux’s Tainan plant for NTD 17 billion, another Taiwanese panel maker, AUO, announced on August 27 that it will sell three idled manufacturing facilities in Tainan, Southern Taiwan as well, as memory giant Micron emerged as the buyer.

Part of buildings and facilities located in Taichung, central Taiwan, would also be sold to Micron. According to a report from Economic Daily News, the total transaction amount is NTD 8.1 billion, with an estimated profit of NTD 4.718 billion, as the deal is expected to be completed by the end of this year.

The same report indicates that after Micron’s failed attempt to acquire Innolux’s 4th Plant in Tainan (5.5-generation LCD panel plant), it turned to AUO for a plant purchase.

To focus on its operational strategy, revitalize assets, and optimize its financial structure, AUO’s board of directors has approved the sale, the report suggests. By acquiring the facilities, Micron plans to further expand its DRAM business in Taiwan, with expectations to develop high-bandwidth memory (HBM) for AI applications.

Industry sources cited by the report have further interpreted the recent plant sales by Taiwan’s leading panel manufacturers as a sign of the rising influence of Chinese LCD companies like BOE and CSOT.

With the Chinese companies dominating the LCD industry, Taiwanese panel manufacturers are moving away from volume-based competition and are gradually selling off plants to mitigate risks associated with price fluctuations in the panel market. Micron’s active investments in Taiwan further strengthen the country’s semiconductor cluster advantage.

Reportedly, AUO pointed out that it originally had three color filter plants in Tainan: the Gen-4 C4A, the Gen-5 C5D, and the Gen-6 C6C.

Among them, the C5D and C6C plants were closed last August, leaving only the C4A plant in production. All three plants are being sold to Micron, with the C4A plant continuing operations under a sale-and-leaseback arrangement.

Micron stated that its operations in Taiwan are designed to meet the growing product demands of the AI era and to reinforce Micron’s market leadership. Through this acquisition, Micron plans to leverage this site to focus on front-end wafer testing,  to supporting the ongoing expansion of DRAM production at Micron’s Taichung and Taoyuan facilities.

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• [News] Micron Advances in Acquiring Innolux’s Southern Taiwan Facility After TSMC Outbids It for the G5.5 Plant
• [News] TSMC Acquires Innolux’s Plant in Southern Taiwan to Expand Advanced Packaging Capacity

(Photo credit: Micron)