On July 31, IQE plc, the global supplier of compound semiconductor wafer products and advanced material solutions, announced the planned initial public offering (IPO) of the Group’s Taiwanese operating subsidiary (IQE Taiwan) on the Taiwan Stock Exchange (TWSE).

The Group intends to list IQE Taiwan on the TWSE and to sell a minority shareholding through a public offering, but it plans to retain control of IQE Taiwan and will continue to leverage its strategic value, with the proceeds of the public offering intended to be utilized across the Group to fund the growth strategy.

Currently, the IPO process is at an early stage, and IQE has engaged Taishin Securities Co. Ltd as its financial advisor to assist in preparing IQE Taiwan for the IPO. IQE explained that the IPO will be proceeded in two stages.

For the initial phase, IQE Taiwan is expected to be listed on the Emerging Market Board in 1H25, subject to usual regulatory procedures and requirements. Further transaction details and information regarding the process will be disclosed as appropriate.

As IQE is capitalizing on the market opportunities ahead, including in GaN Power, the company considers the listing of its Taiwan subsidiary as an exciting opportunity for the entire group, which will accelerate IQE’s investment in its strategy for growth.

Once the subsidiary is successfully listed, IQE is expected to maximize asset value and ensure supply reliability and flexibility for its global customers.

It’s worth noting that aside from IQE, GaN IDM Innoscience is promoting its IPO process on the Hong Kong Stock Exchange while TASC has spun off its subsidiary responsible for 8-inch GaN business and promoted its listing on TWSE, which all reflect the fact that GaN power semiconductor technologies are gaining traction, particularly with the development of AI server and low-altitude economy sectors.

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• [News] Hong Kong Kicked-off Construction of the First GaN Epi-Wafer Pilot Line
• [News] SK keyfoundry Advances in GaN Power Semiconductors, Reportedly Producing for Tesla Soon

(Photo credit: IQE)

To jointly promote the development of Hong Kong’s microelectronics industry, Hong Kong Science and Technology Parks Corporation and MassPhoton (Hong Kong) held a launch ceremony for Hong Kong’s first ultra-high vacuum “Third-Generation Semiconductor Gallium Nitride Epitaxial Wafer Pilot Line” on July 30.

Reportedly, MassPhoton will move into the newly established Microelectronics Center (MEC) to build Hong Kong’s first 8-inch gallium nitride (GaN) epi-wafer pilot line.

According to reports from media like China News Service, MassPhoton plans to invest at least HKD 200 million in Hong Kong to establish the region’s first global R&D center for third-generation semiconductor GaN epitaxial processes in the Hong Kong Science Park. The center will develop an advanced 8-inch GaN epi-wafer process and equipment platform for the production of GaN optoelectronic and power devices.

In addition, MassPhoton will set up Hong Kong’s first ultra-high vacuum production GaN epi-wafer pilot line in the Innovation Park for small-scale production.

The pilot line is expected to be completed, followed by the construction of a GaN epi-wafer mass production line in Hong Kong, creating over 250 microelectronics-related jobs, including epi-wafer and equipment design, production process development, and more, thereby generating substantial economic value.

Currently, the global semiconductor industry is developing rapidly, simultaneously boosting the GaN market size. According to a previous TrendForce’s report, the global GaN power device market is expected to grow from USD 180 million in 2022 to USD 1.33 billion in 2026, with a compound annual growth rate (CAGR) of up to 65%.

Against this backdrop, Hong Kong has prioritized the development of third-generation semiconductor as a key technology field in recent years. For instance, in May 2024, the Finance Committee of the Hong Kong Legislative Council approved a significant investment of HKD 2.83 billion to establish the “Hong Kong Microelectronics R&D Center,” focusing on third-generation semiconductor technologies.

This plan includes setting up a pilot production line equipped with a broad range of critical tools such as I-line lithography equipment, photoresist development tools, high-temperature ion implanters, high-temperature annealing furnaces, and thin-film tools.

Sun Dong, Secretary for Innovation, Technology and Industry of the Hong Kong Special Administrative Region Government, introduced that the government is actively promoting the development of microelectronics industry, and the Hong Kong Microelectronics R&D Institute will be established within the year, accompanying the construction of a SiC pilot line and a GaN pilot line.

The goal is to assist startups and SMEs in trial production, testing, and certification, fostering collaboration across industry, academia, and research in core technologies of third-generation semiconductor industry.

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• [News] Foundry Giant GlobalFoundries Acquired GaN-Related IP
• [News] Over 350 China’s Semiconductor Industry Projects Thriving in 2023

(Photo credit: Hong Kong Science and Technology Parks Corporation)

On July 1, GlobalFoundries (GF), a major foundry player, announced that it has acquired Tagore Technology’s production-verified proprietary GaN (Gallium nitride) power IP portfolio, which refers to a high-power density solution designed to enable higher efficiency and better performance of automobile, IoT, and AI data center applications where power supply is widely used.

Founded in January 2011, Tagore Technology focuses on developing GaN-on-Si (Gallium nitride on silicon) semiconductor technology for RF and power management applications.

As part of the acquisition, a team of veteran engineers from Tagore, dedicated to developing GaN technology, will join GF. “With this acquisition, GF takes another step toward accelerating the availability of GaN and empowering our customers to build the next generation of power management solutions that will reshape the future of mobility, connectivity and intelligence,” said Niels Anderskouv, chief business officer at GF.

It is worth mentioning that in February 2024, GF received a direct subsidy of USD 1.5 billion under the US CHIPS and Science Act, with part of the funds allocated to the mass production of critical technologies, including GaN.

By combining this manufacturing capability with the technical expertise of the Tagore team, GF is well positioned to transform the efficiency of AI systems and enable lower power consumption particularly pivotal for edge or IoT devices.

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• [News] SK keyfoundry Advances in GaN Power Semiconductors, Reportedly Producing for Tesla Soon
• [News] Infineon in GaN and SiC Expansion Drive Advancements in the New Energy Market

(Photo credit: GF)

The chip war between the U.S. and China keeps escalating, as China’s new regulation would reportedly take effect soon. This time it has a new target – rare-earth materials. According to the reports from Nikkei and Tom’s Hardware, the new regulation would be effective on October 1, asserting state ownership over its rare-earth materials critical for semiconductor production.

This measure aims to protect national and industrial interests, though it is seen internationally as a strategy in the ongoing trade dispute with the U.S., the reports noted. By prohibiting unauthorized access to or disruption of rare-earth resources by any individual or organization, the regulation signifies the state ownership over crucial rare earth metals like gallium and germanium.

The regulation, with its large scope, encompasses the entire rare-earth element supply chain, including mining, smelting, processing, distribution, and export.

Starting from October, 2022, the U.S. has launched a series of export controls, targeting to limit China’s access to advanced semiconductor technologies, while tech giants including Intel, Qualcomm and NVIDIA are not allowed to ship some of their most cutting-edge chips to China. Now a new development seems to emerge, as the White House is said to consider additional restrictions on China’s access to gate-all-around (GAA) transistor technology as well as high-bandwidth memory (HBM), according to reports from Bloomberg and Tom’s hardware.

China’s latest move may be a reaction to U.S. export regulations on advanced wafer fabrication equipment, the reports stated.

It is worth noting that as of 2023, China accounted for approximately 70% of global rare-earth element production, according to the reports. Particularly in the case of gallium, which is essential for power ICs, China dominates around 94% of global supply.

While the production of high-performance components such as CPUs, GPUs, and memory may not be severely affected, restrictions on gallium nitride (GaN) and gallium arsenide (GaAs) could notably affect power chips, radio frequency amplifiers, LEDs, and other critical applications, the reports said.

On the other hand, China’s upcoming regulation on rare earth metals may have other impacts. The reports noted that gallium and germanium, being not scarce, has been maintained at low price levels in China, which makes mining them elsewhere relatively unprofitable. The new restrictions, therefore, have influenced the prices of these metals, prompting companies in other countries to initiate extraction projects, potentially reducing China’s market dominance in the long run.

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• [News] US Reportedly Mulls to Further Limit China’s Access to GAA Chip Technology and HBM
• [News] Escalating US China Tech War! China Reportedly Tightens Grip on Intel and AMD, Impacting TSMC

SK keyfoundry, a subsidiary of memory giant SK hynix, has achieved notable progress in the development of Gallium Nitride (GaN) power semiconductors. According to the latest report by Business Korea, the foundry would begin producing power semiconductors for Tesla in the second half of 2024.

According to the report, SK keyfoundry announced in early June that it has achieved the primary device characteristics of a 650V GaN High Electron Mobility Transistor (HEMT), which surpasses traditional silicon-based semiconductors in both efficiency and durability. This advancement aligns with SK keyfoundry’s plan to finalize the development of GaN power semiconductors by the end of this year.

It is worth noting that TSMC has also entered the GaN market a few years ago, as it provides GaN process for manufacturing 100/650V discrete GaN power devices for customers. For instance, in 2020, the world’s largest foundry has announced to collaborate with STMicroelectronics. According to its press release, ST’s GaN products will be manufactured using TSMC’s leading GaN process technology, including applications relating to automotive converters and chargers for hybrid and electric vehicles.

Regarding the development of SK keyfoundry, Business Korea noted that the company established an official team in 2022 to focus on the development of GaN technologies. Citing industry sources on June 20^th, the report stated that SK keyfoundry will reportedly begin producing power semiconductors for Tesla in the second half of this year.

Moreover, it also mulls to broaden its business scope, entering markets like fast-charging adapters, data centers, and energy storage systems afterwards. Starting in November, the company plans to manufacture power management chips (PMIC) at its 8-inch wafer fab in Cheongju.

Though foundries have not significantly contributed to SK hynix’s revenue so far, the development of power semiconductors could boost overall foundry sales. According to the report, SK keyfoundry also provides contract manufacturing for non-memory semiconductors such as Display Driver ICs (DDI) and Microcontroller Units (MCU), further diversifying its product lineup.

In the current landscape of the new energy market, third-generation semiconductors such as SiC and GaN have gained significant traction. SiC (Silicon Carbide) and GaN could offer significant benefits over traditional silicon.

To elaborate, semiconductor materials have the so-called “bandgap,” an energy range in a solid where no electrons can exist. According to German chipmaker Infineon, GaN has a bandgap of 3.4 eV, compared to silicon’s 1.12 eV bandgap. The wider bandgap of GaN allows it to sustain higher voltages and temperatures than silicon. While SiC dominates the high-power domain, GaN excels at lower power levels, offering lower conduction losses.

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• [News] Infineon in GaN and SiC Expansion Drive Advancements in the New Energy Market

(Photo credit: SK keyfoundry)