Pei-Ing Lee, the General Manager of Nanya Technology, a major DRAM manufacturer, mentioned on January 10th that this year has seen an upward trend in DRAM prices

According to Economic Daily News citnig from Nanya Technology’s earnings call for 23Q4,  this trend is attributed to the resurgence of the smartphone market, increased demand fueled by AI, and the three major memory manufacturers pivoting towards DDR5 production. This shift is advantageous for depleting DDR4 inventory and could potentially result in a supply shortage.

Having endured over a year of downturn in the memory market, Lee expressed an optimistic outlook by stating that “there is a possibility of future supply shortages,” revealing an overall positive trajectory for the DRAM market.

Lee acknowledged that the DRAM market faced challenges last year, resulting in stagnant bit sales for Nanya Technology. However, he anticipates a better scenario this year, noting the upward trend in DDR4 pricing. The timing for DDR3 price increases is expected to follow but at a slower pace. Lee further stated that DDR3 constituted about 40% of Nanya Technology’s revenue  in the past, but it is expected to decrease, with DDR4’s share rising.

Due to major international players focusing on High-Bandwidth Memory (HBM) and DDR5, he anticipates a potential supply shortage for DDR4 this year.

Lee pointed out that the growth in AI demand is positively impacting the DRAM market. The shift from high-end HBM and DDR4 to DDR5 is influencing demand, showing improvement quarter by quarter.

Regarding pricing trends, he confirmed a rebound in prices in the fourth quarter of 2023 and expressed optimism for a gradual upward trend in 2024. However, Lee cautioned that external variables such as geopolitical tensions, the war in Europe, and the U.S.-China trade dispute could still impact the market’s recovery momentum.

In terms of demand, Lee highlighted four key points. Firstly, server demand is driven by AI servers, with a focus on observing IT spending by U.S. cloud companies. Secondly, the introduction of new smartphones, leading to an increase in average DRAM capacity, especially in AI smartphones boosting the high-end smartphone market. Presently, improving smartphone sales in China are observed, and the recovery momentum of the Chinese economy is crucial.

In the PC application sector, Lee mentioned that inventory is gradually returning to normal levels, and AI PCs will simultaneously boost the high-end PC market. As for consumer electronic terminal products, demand for IP cameras, networking, industrial control, and automotive applications is relatively healthy, with consumer electronic products expected to show stable growth in 2024.

In terms of technological advancements, Nanya Technology aims to begin small-scale production of DDR5 products at the end of the third quarter of this year. Initially applied in servers and partly in PCs, the first product is expected to achieve a bandwidth of 5600MHz, while the second product is currently in the design phase, with an estimated bandwidth of 6400MHz.

Lee explained that their second DDR5 product will utilize third-generation processes, aiming to further improve cost structures, increase speed, achieve a target of 6400 MHz, and possess the capability for high density and 3D IC technology.

Read more

• [News] Nanya Tech Expects Continued Conservative Spending to Balance DRAM Supply-Demand in 2024
• [News] After Memory Price Hike, Shortages Emerge in Some Products?

(Photo credit: Nanya Technology)

Micron, the American memory giant, is gearing up to initiate the production of state-of-the-art “1γ” DRAM at its Hiroshima fab in Japan, starting in 2025. Concurrently, there are plans to manufacture High-Bandwidth Memory (HBM) at the same fab, tailored for the rising demand for generative AI applications.

According to a report from Nikkei Asia on December 13th, Joshua Lee, VP at Micron Memory Japan, made this announcement during the event SEMICON Japan 2023. Lee highlighted that the Hiroshima fab is slated to manufacture DRAM with the most advanced “1γ” process by 2025. He also pointed out that Micron is also going to be the first semiconductor company to introduce Extreme Ultraviolet (EUV) lithography equipment to Japan.

In addition to this, Lee shared insights into Micron’s intentions to produce HBM at the Hiroshima fab, which is widely applied for generative AI applications. He stated that Japan’s strong semiconductor ecosystem will be a key driving force behind Micron’s progress. Furthermore, he emphasized that collaboration is pivotal for Japan to establish itself as a global leader in the semiconductor supply chain.

Earlier In October, the Ministry of Economy, Trade, and Industry (METI) of Japan announced a substantial subsidy of JPY 192 billion for Micron’s Hiroshima fab. Micron has recently declared a comprehensive investment plan of JPY 500 billion in Japan over the next few years, encompassing the Hiroshima fab.

Micron has been actively developing its DRAM manufacturing operations in Japan and Taiwan. Donghui Lu, Corporate VP of Micron Taiwan, revealed in a September interview with the UDN News that approximately 65% of Micron’s DRAM output originates from Taiwan. Regarding the migration to the 1β process, mass production began at Micron Japan last year, and Micron Taiwan has also commenced mass production this year. As for the more advanced 1γ process, production is expected to take place in both Taiwan and Japan by 2025.

TrendForce’s analysis has also revealed that Micron is leveraging its 1β nm technology to produce HBM3e in a bid to gain a competitive edge over Korean suppliers. Its front-end manufacturing is strategically positioned in Japan, aligning with expansion plans for 1β nm capacity.

Additionally, Micron has established a backend factory in Taiwan to meet surging HBM demands driven by the AI era. TrendForce anticipates that HBM products will substantially boost the revenue of DRAM suppliers in 2024.

(Image: Micron)

Explore more

• [News] Memory Titans Vie for Control in HBM Tech, Who Will Shape the Next-Gen?
• [News] Memory Giants Samsung & Micron Actively Embrace DDR5 and HBM as Favorable Choices

The shortage of advanced packaging production capacity is anticipated to end earlier than expected. Industry suggests that Samsung’s inclusion in providing HBM3 production capacity has led to an increased supply of memory essential for advanced packaging. Coupled with TSMC’s strategy of enhancing advanced packaging production capacity through equipment modifications and partial outsourcing, and the adjustments made by some CSP in designs and placing orders, the bottleneck in advanced packaging capacity is poised to open up as early as the first quarter of the upcoming year, surpassing industry predictions by one quarter to half a year, according to the UDN News.

TSMC refrains from commenting on market speculations, while Samsung has already issued a press release signaling the expansion of HBM3 product sales to meet the growing demand for the new interface, concurrently boosting the share of advanced processes.

Industry indicates that the previous global shortage of AI chips primarily resulted from inadequate advanced packaging capacity. Now the shortage in advanced packaging capacity is expected to end sooner, it implies a positive shift in the supply of AI chips.

Samsung, alongside Micron and SK Hynix, is a key partner for TSMC in advanced packaging. In a recent press release, Samsung underscores its close collaboration with TSMC in previous generations and the current high-bandwidth memory (HBM) technology, supporting the compatibility of the CoWoS process and the interconnectivity of HBM. Having joined the TSMC OIP 3DFabric Alliance in 2022, Samsung is set to broaden its scope of work and provide solutions for future generations of HBM.

Previously, the industry points out that the earlier shortage of AI chips stemmed from three main factors: insufficient advanced packaging capacity, tight HBM3 memory capacity, and some CSPs repeatedly placing orders. Now, the obstacles related to these factors are gradually being overcome. In addition to TSMC and Samsung’s commitment to increasing advanced packaging capacity, CSPs are adjusting designs, reducing the usage of advanced packaging, and canceling previous repeated orders – all of which are the key factors.

TSMC’s ongoing collaboration with OSATs(Outsourced Semiconductor Assembly And Test) to expedite WoS capacity expansion is gaining momentum. NVIDIA confirmed during a recent financial calls that it has certified other CoWoS advanced packaging suppliers’ capacity as a backup. Industry speculation suggests that certifying the capacity of other CoWoS suppliers for both part of the front-end and back-end production will contribute to TSMC and its partners achieving the target of reaching a monthly CoWoS capacity of approximately 40,000 pieces in the first quarter of the next year.

Furthermore, previous challenges in expanding advanced packaging production capacity, especially in obtaining overseas equipment, are gradually being overcome. With equipment optimization, more capacity is being extracted, alleviating the shortage of AI chip capacity.

(Image: Samsung)

Explore more

• • [News] Memory Titans Vie for Control in HBM Tech, Who Will Shape the Next-Gen?
  • [News] Samsung Boosts 2.5D Packaging Equipment to Compete for TSMC’s CoWoS Orders
  • [News] The Alliance among Apple, TSMC, and Amkor May Pose Challenges to Samsung’s Advanced Packaging Strategy

Market reports suggest Nvidia’s new product release cycle has shortened from two to a year, sparking intense competition among major memory companies in the realm of next-gen High Bandwidth Memory (HBM) technology. Samsung, SK Hynix, and Micron are fervently competing, with SK Hynix currently holding the dominant position in the HBM market. However, Micron and Samsung are strategically positioned, poised for a potential overtake, reported by TechNews.

Current Status of the HBM Industry

SK Hynix made a breakthrough in 2013 by successfully developing and mass-producing HBM using the Through Silicon Via (TSV) architecture. In 2019, they achieved success with HBM2E, maintaining the overwhelming advantage in the HBM market. According to the latest research from TrendForce, Nvidia plan to partner with more HBM suppliers. Samsung, as one of the suppliers, its HBM3 (24GB) is anticipated to complete verification with NVIDIA by December this year.

Regarding HBM3e progress, Micron, SK Hynix, and Samsung provided 8-layer (24GB) Nvidia samples in July, August, and October, respectively, with the fastest verification expected by year-end. All three major players anticipate completing verification in the first quarter of 2024.

As for HBM4, the earliest launch is expected in 2026, with a stack increase to 16 layers from the existing 12 layers. The memory stack will likely adopt a 2048-bit memory stack connection interface, driving demand for the new “Hybrid Bonding” stacking method. The 12-layer HBM4 product is set to launch in 2026, followed by the 16-layer product expected in 2027.

Navigating HBM4, the New Technologies and Roadmaps of Memory Industry Leaders

SK Hynix

According to reports from Business Korea, SK Hynix is preparing to adopt “2.5D Fan-Out” packaging for the next-generation HBM technology. This move aims to enhance performance and reduce packaging costs. This technology, not previously used in the memory industry but common in advanced semiconductor manufacturing, is seen as having the potential to “completely change the semiconductor and foundry industry.” SK Hynix plans to unveil research results using this packaging method as early as next year.

The 2.5D Fan-Out packaging technique involves arranging two DRAM horizontally and assembling them similar to regular chips. The absence of a substrate beneath the chips allows for thinner chips, significantly reducing the thickness when installed in IT equipment. Simultaneously, this technique bypasses the Through Silicon Via (TSV) process, providing more Input/Output (I/O) options and lowering costs. 

According to their previous plan, SK Hynix aims to mass-produce the sixth-generation HBM (HBM4) as early as 2026. The company is also actively researching “Hybrid Bonding” technology, likely to be applied to HBM4 products.

Currently, HBM stacks are placed on the interposer next to or GPUs and are connected to their interposer. While SK Hynix’s new goal is to eliminate the interposer completely, placing HBM4 directly on GPUs from companies like Nvidia and AMD, with TSMC as the preferred foundry.

Samsung

Samsung is researching the application of photonics in HBM technology’s interposer layer, aiming to address challenges related to heat and transistor density. Yan Li, Principal Engineer in Samsung’s advanced packaging team, shared insights at the OCP Global Summit in October 2023.

(Image: Samsung)

According to Samsung, The industry has made significant strides in integrating photonics with HBM through two main approaches. One involves placing a photonics interposer between the bottom packaging layer and the top layer containing GPU and HBM, acting as a communication layer. However, this method is costly, requiring an interposer and photon I/O for logic chips and HBM.

(Image: Samsung)

The alternative approach separates the HBM memory module from packaging, directly connecting it to the processor using photonics. Rather than dealing with the complexity of packaging, a more efficient approach is to separate the HBM memory module from the chip itself and connect it to the logic IC using photonics technology. This approach not only simplifies the manufacturing and packaging costs for HBM and logic ICs but also eliminates the need for internal digital-to-optical conversions in the circuitry. However, careful attention is required to address heat dissipation.

Micron

As reported by Tom’s Hardware, Micron’s 8-layer HBM3e (24GB) is expected to launch in early 2024, contributing to improved AI training and inference performance. The 12-layer HBM3e (36GB) chip is expected to debut in 2025.

Micron is working on HBM4 and HBM4e along with other companies. The required bandwidth is expected to exceed 1.5 TB/s. Micron anticipates launching 12-layer and 16-layer HBM4 with capacities of 36GB to 48GB between 2026 and 2027. After 2028, HBM4E will be introduced, pushing the maximum bandwidth beyond 2+ TB/s and increasing stack capacity to 48GB to 64GB.

Micron is taking a different approach from Samsung and SK Hynix by not integrating HBM and logic chips into a single die, suggested by Chinese media Semiconductor Industry Observation. This difference in strategy may lead to distinct technical paths, and Micron might advise Nvidia, Intel, AMD that relying solely on the same company’s chip carries greater risks.

(Image: Micron)

TSMC Aids Memory Stacking       

Currently, TSMC 3DFabric Alliance closely collaborates with major memory partners, including Micron, Samsung, and SK Hynix. This collaboration ensures the rapid growth of HBM3 and HBM3e, as well as the packaging of 12-layer HBM3/HBM3e, by providing more memory capacity to promote the development of generative AI.

(Image: TSMC)

(Image: SK Hynix)

Explore more

• Manufacturers Anticipate Completion of NVIDIA’s HBM3e Verification by 1Q24; HBM4 Expected to Launch in 2026, Says TrendForce
• [News] SK Hynix Signs Prioritized Supply Agreement with NVIDIA for HBM3e, 2023 Q4 Revenue Expected to Surpass KRW 10 Trillion Again
• [News] Memory Giants Samsung & Micron Actively Embrace DDR5 and HBM as Favorable Choices
• [News] Seizing the AI Trend! Revealing Samsung and Micron’s HBM Expansion Timetable
• Continuous Rise in HBM Demand, Memory Giants Expecting HBM4 Delivery in 2025

Stepping into the fourth quarter of 2023, the memory market is witnessing a comprehensive uptick in DRAM and NAND Flash prices. This surge, attributed to the gradual impact of companies’ production cuts and sustained robust demand in specific application markets, is poised to continue into the first quarter of the following year.

TrendForce’s analysis reveals an estimated 13-18% increase in Mobile DRAM contract prices for the fourth quarter, while eMMC and UFS NAND Flash contracts are expected to see a rise of about 10-15%. Looking forward to the first quarter of 2024, the upward trajectory in overall memory prices is anticipated to persist. The contract prices for Mobile DRAM and NAND Flash (eMMC, UFS) are expected to continue ascending, contingent on whether companies uphold a conservative production strategy and if there’s tangible consumer demand support at the end.

The memory market, coming out of its challenging phase, is not just experiencing increases in prices but is also anticipated to gain momentum from various factors contributing to its revival.

AI-Driven Surge in Smartphone Memory Capacities

According to reports from Wccftech, a notable trend in 2024 is the rise of terminal AI, now integrated into various chipsets like Snapdragon 8 Gen 3, Dimensity 9300, and Exynos 2400. Smartphones with AI demand more memory, with the expectation that Android phones featuring built-in AI will require a minimum of 20GB RAM.

While 8GB RAM remains the standard for Android phones, there are now phones in the market boasting higher RAM capacities than most laptops or PCs, though it has yet to become ubiquitous. Industry experts suggest that to smoothly execute AI image feature in the future, Android phones will need at least 12GB RAM. Considering AI applications and other features, phones will require over 20GB RAM for seamless operations.

Given that numerous Android phone brands are actively investing in AI, 2024 is poised to make AI a focal point for devices. Consequently, the industry underscores that as RAM requirements rise, hardware specifications become more crucial than ever for modern AI devices.

Noteworthy Growth in DDR5 Market Demand

Industry experts anticipate significant growth in demand for the DDR5 market, fueled by decreasing prices and the continuous improvement in companies’ yields.

As a high-value-added DRAM, DDR5 continues to garner favor from major players. Micron recent announcement of DDR5 memory based on 1β technology, boasting speeds of up to 7200 MT/s, signifies a shift toward the data center and PC markets.

Recently, Micron also introduced a 128GB DDR5 RDIMM memory utilizing 32Gb chips. This series boasts speeds of up to 8000 MT/s and is suitable for server and workstations. Employing Micron’s 1β technology, these series contribute to a 24% improvement in energy efficiency and 16% reduction in latency. Furthermore, Micron plans to launch models with speeds of 4800 MT/s, 5600 MT/s, and 6400 MT/s in 2024, with an upcoming model featuring a speed of 8000 MT/s in the future.

In terms of Samsung, it is reported to expand its DDR5 production line. Given the high value of DDR5 and its adoption in the PC and server markets, this year is considered a “year of large-scale adoption of DDR5.”

Improvement in HBM Supply Situation

Similar to DDR5, HBM, a high-value-added DRAM, has attracted significant attention this year. Fueled by the AI trend, the demand for the HBM market has surged, leading to an expansion in HBM production capacity.

TrendForce’s research indicates that looking ahead to 2024, the HBM sufficiency ratio is expected to improve, shifting from -2.4% in 2023 to 0.6%. With the AI boom driving demand for AI chips in 2023 and 2024, companies are increasing HBM capacity, anticipating a significant improvement in the HBM supply in 2024.

In terms of specifications, as the performance needs of AI chips increase, it’s anticipated that HBM3 and HBM3e will become the dominant choices in 2024. In general, with a rise in demand and the higher average selling prices of HBM3 and HBM3e compared to older versions, the revenue from HBM is expected to experience significant growth in 2024.

(Image: Qualcomm)

Explore more

• [News] Memory Giants Samsung & Micron Actively Embrace DDR5 and HBM as Favorable Choices
• [Insights] Signals from the Latest Financial Reports of Top 5 Global Storage Giants
• [Insights] Weekly Price Update: DRAM Slightly Increased, NAND Remained Stable