In response to the recovery in the memory market and the increasing demand for High Bandwidth Memory (HBM) driven by AI chips, South Korean memory giant SK Hynix is reportedly planning to upgrade part of its DRAM production equipment at its Wuxi plant to the fourth-generation of 10-nanometer process this year.

According to a report by Seoul Economic Daily, the Wuxi plant is a core production base for SK Hynix, contributing approximately 40% of its total DRAM production. Currently, the Wuxi facility is producing second and third-generation DRAM, which falls under the category of older products in the late 10-nanometer class.

As the semiconductor market enters a recovery phase, the expansion of SK Hynix’s high-performance chip capacity has become urgent. To maintain its market share in the High Bandwidth Memory (HBM) market, SK Hynix needs advanced products such as the fourth-generation of 10-nanometer DRAM or higher versions.

According to a previous TrendForce press release, in terms of competitive positioning, SK Hynix’s HBM3 products are leading other manufacturers and serve as the primary supplier for NVIDIA Server GPUs. Samsung, on the other hand, focuses on meeting orders from other cloud service providers.

SK hynix’s fifth-generation HBM (HBM3E), which began mass production in the first half of this year, has a maximum capacity of 36GB (288Gb) in its next-stage product. It achieves this through stacking 12 chips of 24Gb DRAM. In 2022, SK hynix first adopted the fourth-generation DRAM process to realize 24Gb DRAM. HBM3E requires the use of the fourth generation or higher versions of the DRAM manufacturing process to meet customer demands.

SK Hynix, in response to increasing HBM3E orders from key customers like NVIDIA, must find ways to convert the Wuxi DRAM process in addition to utilizing the capacity of its Icheon headquarters factory.

SK Hynix has been using Extreme Ultraviolet (EUV) lithography since the production of the fourth-generation of 10-nanometer DRAM. However, due to the inability to introduce EUV exposure equipment to Wuxi, the production of this DRAM becomes challenging. Notably, constrained by U.S. restrictions on the export of EUV exposure eqipment to China, transitioning the Wuxi plant to the fourth-generation of 10-nanometer DRAM and beyond will pose a significant challenge.

The report indicates that SK Hynix plans to complete part of the fourth-generation DRAM process on the Wuxi production line, then transport the chips to the Icheon plant for EUV application, and finally return them to Wuxi to complete the entire process. SK Hynix has experience with a similar approach during the Wuxi plant fire in 2013, overcoming disruptions in DRAM production.

Regarding the rumors about the Wuxi plant upgrade, SK Hynix stated that it cannot confirm the specific operational plans for the factory.

(Image: SK Hynix)

The recovery of the memory industry is evident, with Taiwanese companies such as Macronix, Nanya Technology, and Transcend all showing month-on-month revenue growth in December last year. Additionally, contract prices for DRAM and NAND Flash are expected to continue rising in the first quarter of 2024. However, the global second-largest memory manufacturer, SK Hynix, plans a expansion, introducing a variable element to the memory market.

According to a report by the Commercial Times, SK Hynix disclosed that it might reduce the scale of DRAM production cuts in the first quarter, while adjustments to the NAND Flash production strategy may occur in the second or third quarter, depending on the situation.

In response to major memory manufacturers’ expansion plans, Taiwanese memory firms believe that Hynix’s expansion should focus primarily on DDR5 and HBM (High-Bandwidth Memory) products. Nevertheless, Taiwan currently specializes in DDR4 products, and it is not expected to impact product pricing.

According to a press release from TrendForce published this week, the DRAM contract prices are estimated to increase by approximately 13–18% in 1Q24 with mobile DRAM leading the surge. It appears that due to the unclear demand outlook for the entire year of 2024, manufacturers believe that sustained production cuts are necessary to maintain the supply-demand balance in the memory industry.

For consumer DRAM, manufacturers are aggressively raising contract prices, which has prompted buyers to stockpile early. This has greatly improved purchasing momentum. However, the first quarter coincides with the industry’s off-season, and end sales are expected to be weak and lead to increased inventory levels due to buyers’ early stocking strategies.

Manufacturers generally believe that in 2024—with the expanding penetration of HBM and DDR5 each quarter—low-margin DDR4 capacity will be crowded out, thereby leading to shortages. As such, DDR4 contract prices are expected to outpace DDR3 in the first quarter by 10–15%. DDR3 continues to be supplied by Taiwanese manufacturers, and with generally high inventory levels, its contract price increase is estimated at 8–13% for 1Q24.

(Image: SK Hynix)

Pei-Ing Lee, the General Manager of Nanya Technology, a major DRAM manufacturer, mentioned on January 10th that this year has seen an upward trend in DRAM prices

According to Economic Daily News citnig from Nanya Technology’s earnings call for 23Q4,  this trend is attributed to the resurgence of the smartphone market, increased demand fueled by AI, and the three major memory manufacturers pivoting towards DDR5 production. This shift is advantageous for depleting DDR4 inventory and could potentially result in a supply shortage.

Having endured over a year of downturn in the memory market, Lee expressed an optimistic outlook by stating that “there is a possibility of future supply shortages,” revealing an overall positive trajectory for the DRAM market.

Lee acknowledged that the DRAM market faced challenges last year, resulting in stagnant bit sales for Nanya Technology. However, he anticipates a better scenario this year, noting the upward trend in DDR4 pricing. The timing for DDR3 price increases is expected to follow but at a slower pace. Lee further stated that DDR3 constituted about 40% of Nanya Technology’s revenue  in the past, but it is expected to decrease, with DDR4’s share rising.

Due to major international players focusing on High-Bandwidth Memory (HBM) and DDR5, he anticipates a potential supply shortage for DDR4 this year.

Lee pointed out that the growth in AI demand is positively impacting the DRAM market. The shift from high-end HBM and DDR4 to DDR5 is influencing demand, showing improvement quarter by quarter.

Regarding pricing trends, he confirmed a rebound in prices in the fourth quarter of 2023 and expressed optimism for a gradual upward trend in 2024. However, Lee cautioned that external variables such as geopolitical tensions, the war in Europe, and the U.S.-China trade dispute could still impact the market’s recovery momentum.

In terms of demand, Lee highlighted four key points. Firstly, server demand is driven by AI servers, with a focus on observing IT spending by U.S. cloud companies. Secondly, the introduction of new smartphones, leading to an increase in average DRAM capacity, especially in AI smartphones boosting the high-end smartphone market. Presently, improving smartphone sales in China are observed, and the recovery momentum of the Chinese economy is crucial.

In the PC application sector, Lee mentioned that inventory is gradually returning to normal levels, and AI PCs will simultaneously boost the high-end PC market. As for consumer electronic terminal products, demand for IP cameras, networking, industrial control, and automotive applications is relatively healthy, with consumer electronic products expected to show stable growth in 2024.

In terms of technological advancements, Nanya Technology aims to begin small-scale production of DDR5 products at the end of the third quarter of this year. Initially applied in servers and partly in PCs, the first product is expected to achieve a bandwidth of 5600MHz, while the second product is currently in the design phase, with an estimated bandwidth of 6400MHz.

Lee explained that their second DDR5 product will utilize third-generation processes, aiming to further improve cost structures, increase speed, achieve a target of 6400 MHz, and possess the capability for high density and 3D IC technology.

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(Photo credit: Nanya Technology)

Micron, the American memory giant, is gearing up to initiate the production of state-of-the-art “1γ” DRAM at its Hiroshima fab in Japan, starting in 2025. Concurrently, there are plans to manufacture High-Bandwidth Memory (HBM) at the same fab, tailored for the rising demand for generative AI applications.

According to a report from Nikkei Asia on December 13th, Joshua Lee, VP at Micron Memory Japan, made this announcement during the event SEMICON Japan 2023. Lee highlighted that the Hiroshima fab is slated to manufacture DRAM with the most advanced “1γ” process by 2025. He also pointed out that Micron is also going to be the first semiconductor company to introduce Extreme Ultraviolet (EUV) lithography equipment to Japan.

In addition to this, Lee shared insights into Micron’s intentions to produce HBM at the Hiroshima fab, which is widely applied for generative AI applications. He stated that Japan’s strong semiconductor ecosystem will be a key driving force behind Micron’s progress. Furthermore, he emphasized that collaboration is pivotal for Japan to establish itself as a global leader in the semiconductor supply chain.

Earlier In October, the Ministry of Economy, Trade, and Industry (METI) of Japan announced a substantial subsidy of JPY 192 billion for Micron’s Hiroshima fab. Micron has recently declared a comprehensive investment plan of JPY 500 billion in Japan over the next few years, encompassing the Hiroshima fab.

Micron has been actively developing its DRAM manufacturing operations in Japan and Taiwan. Donghui Lu, Corporate VP of Micron Taiwan, revealed in a September interview with the UDN News that approximately 65% of Micron’s DRAM output originates from Taiwan. Regarding the migration to the 1β process, mass production began at Micron Japan last year, and Micron Taiwan has also commenced mass production this year. As for the more advanced 1γ process, production is expected to take place in both Taiwan and Japan by 2025.

TrendForce’s analysis has also revealed that Micron is leveraging its 1β nm technology to produce HBM3e in a bid to gain a competitive edge over Korean suppliers. Its front-end manufacturing is strategically positioned in Japan, aligning with expansion plans for 1β nm capacity.

Additionally, Micron has established a backend factory in Taiwan to meet surging HBM demands driven by the AI era. TrendForce anticipates that HBM products will substantially boost the revenue of DRAM suppliers in 2024.

(Image: Micron)

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The shortage of advanced packaging production capacity is anticipated to end earlier than expected. Industry suggests that Samsung’s inclusion in providing HBM3 production capacity has led to an increased supply of memory essential for advanced packaging. Coupled with TSMC’s strategy of enhancing advanced packaging production capacity through equipment modifications and partial outsourcing, and the adjustments made by some CSP in designs and placing orders, the bottleneck in advanced packaging capacity is poised to open up as early as the first quarter of the upcoming year, surpassing industry predictions by one quarter to half a year, according to the UDN News.

TSMC refrains from commenting on market speculations, while Samsung has already issued a press release signaling the expansion of HBM3 product sales to meet the growing demand for the new interface, concurrently boosting the share of advanced processes.

Industry indicates that the previous global shortage of AI chips primarily resulted from inadequate advanced packaging capacity. Now the shortage in advanced packaging capacity is expected to end sooner, it implies a positive shift in the supply of AI chips.

Samsung, alongside Micron and SK Hynix, is a key partner for TSMC in advanced packaging. In a recent press release, Samsung underscores its close collaboration with TSMC in previous generations and the current high-bandwidth memory (HBM) technology, supporting the compatibility of the CoWoS process and the interconnectivity of HBM. Having joined the TSMC OIP 3DFabric Alliance in 2022, Samsung is set to broaden its scope of work and provide solutions for future generations of HBM.

Previously, the industry points out that the earlier shortage of AI chips stemmed from three main factors: insufficient advanced packaging capacity, tight HBM3 memory capacity, and some CSPs repeatedly placing orders. Now, the obstacles related to these factors are gradually being overcome. In addition to TSMC and Samsung’s commitment to increasing advanced packaging capacity, CSPs are adjusting designs, reducing the usage of advanced packaging, and canceling previous repeated orders – all of which are the key factors.

TSMC’s ongoing collaboration with OSATs(Outsourced Semiconductor Assembly And Test) to expedite WoS capacity expansion is gaining momentum. NVIDIA confirmed during a recent financial calls that it has certified other CoWoS advanced packaging suppliers’ capacity as a backup. Industry speculation suggests that certifying the capacity of other CoWoS suppliers for both part of the front-end and back-end production will contribute to TSMC and its partners achieving the target of reaching a monthly CoWoS capacity of approximately 40,000 pieces in the first quarter of the next year.

Furthermore, previous challenges in expanding advanced packaging production capacity, especially in obtaining overseas equipment, are gradually being overcome. With equipment optimization, more capacity is being extracted, alleviating the shortage of AI chip capacity.

(Image: Samsung)

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