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Though Samsung has denied the rumor that its HBM3e passed NVIDIA’s qualification tests, multiple Taiwanese companies in the supply chain reportedly learned that the product is expected to receive certification soon, and will start shipping in Q3. As memory manufacturers are said to shift at least 20-30% of their production capacity to HBM, tightening supply further, DDR5 prices in Q3 will reportedly be on the rise.
It is reported that some of Samsung’s supply chain partners have recently received information to place orders and reserve capacity as soon as possible, which indicates the memory giant’s HBM may begin shipments smoothly in the second half of the year. The move may also imply that the internal capacity allocation within Samsung will accelerate, shifting the focus of production lines to HBM.
Taiwanese memory supply chain sources reportedly believe that the news of Samsung’s HBM certification is likely to be confirmed at the upcoming Samsung financial report meeting, which will take place on July 31. It is said that memory manufacturers will relocate at least 20-30% of their production capacity, driving DDR5 prices to rise.
TrendForce notes that a recovery in demand for general servers—coupled with an increased production share of HBM by DRAM suppliers—has led suppliers to maintain their stance on hiking prices. As a result, the ASP of DRAM in Q3 is expected to continue rising, with an anticipated increase of 8–13%. Due to high average inventory levels of DDR4 among buyers, purchasing momentum will be focused on DDR5.
On the other hand, regarding NAND prices in Q3, TrendForce reports that while the enterprise sector continues to invest in server infrastructure, the consumer electronics market remains lackluster. This, combined with NAND suppliers aggressively ramping up production in the second half of the year, is likely to curb the blended price hike to a modest 5–10%.
According to TrendForce’s latest analysis, Samsung’s initial plan to pass NVIDIA’s certification in Q2 was delayed, making it falling behind SK hynix and Micron. Simultaneously, some HBM suppliers also faced lower-than-expected production yields, leading to concerns about a shortage of HBM3e 8hi materials for the H200 GPU shipments starting in Q2 2024.
However, Samsung adjusted its 1alpha nm front-end production process and back-end stacking process in the first half of 2024, leading the industry to expect that sample production could be completed in Q3 2024, followed by product certification.
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While still working in the final stage of HBM3e qualification with NVIDIA, Samsung Electronics is also advancing in the AI memory market with custom high bandwidth memory (HBM) solutions. According to reports by PassionateGeekz and China Flash Market, the memory giant is collaborating with major clients, such as AMD and Apple, to develop tailored HBM products, which are expected to be commercially available in the era of HBM4.
Citing Choi Jang-seok, head of Samsung’s new business planning team at memory division, the reports note that many customers of Samsung are switching from traditional, general HBM to customized products, as the latter promises better performance, power and area (PPA), while offering greater value than current options.
PassionateGeekz notes that at the Samsung Foundry Forum 2024 earlier this week, Choi further highlighted two forms of customized HBM Samsung has been developing. It is worth noting that Samsung is developing a large-capacity HBM4 memory with a single stack capacity of 48GB, which is expected to enter production in 2025.
On the other hand, Samsung also illustrated the innovation of the 3D stacking of HBM DRAM and customer-specific logic chips. By bypassing the interposer and base die required in the existing 2.5D packaging solution, the HBM chip can be directly integrated into the computing SoC in 3D. Samsung’s custom HBM, therefore, by eliminating intermediaries and substrates, can significantly reduce power and area.
TrendForce also observed that for HBM4, standard processes and capacities have been settled. The three major suppliers are in the development stage, with each buyer initiating custom requests. For future generations of HBM, new directions have been proposed, as HBM may no longer be just arranged next to the SoC main chip but could also stack directly on top of it.
While all the options are still under feasibility discussion and not finalized, TrendForce believes the future HBM industry will shift towards more customized production. Compared to other DRAM products, this approach aims to break away from the framework of commodity DRAM in terms of pricing and design, offering more specialized solutions.
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According to a report from BusinessKorea, memory giant SK hynix is deepening its collaboration with TSMC and NVIDIA, and will announce a closer partnership at the Semicon Taiwan exhibition in September.
SK hynix has been collaborating with TSMC for many years. In 2022, TSMC announced the establishment of the OIP 3DFabric Alliance at its North America Technology Symposium, incorporating partners in memory and packaging.
At that time, Kangwook Lee, Senior Vice President and PKG Development Lead at SK hynix, revealed that the company has been closely working with TSMC on previous generations and current high-bandwidth memory (HBM) technologies, supporting compatibility with the CoWoS process and HBM interconnectivity.
After joining the 3DFabric Alliance, SK hynix reportedly plans to deepen its collaboration with TSMC to develop solutions for the next generation of HBM, looking to achieve innovations in system-level products.
SK hynix President, Justin Kim, is reportedly said to be delivering a keynote speech at the International Semiconductor Exhibition in Taipei in September, marking SK hynix’s first participation in such a keynote address. Following the speech, Kim will engage in discussions with senior executives from TSMC, possibly including NVIDIA CEO Jensen Huang, to discuss collaborative plans for the next generation of HBM. This move is expected to further solidify the trilateral alliance between SK hynix, TSMC, and NVIDIA.
Notably, the collaboration among the three giants was hinted in the first half of this year. On April 25th, SK Group Chairman Chey Tae-won traveled to Silicon Valley to meet with NVIDIA CEO Jensen Huang, potentially related to these strategies.
Reportedly, SK hynix will adopt TSMC’s logic process to manufacture the base die for HBM (High Bandwidth Memory). Reports indicate that SK hynix and TSMC have agreed to collaborate on the development and production of HBM4, scheduled for mass production in 2026.
HBM stacks core chips vertically on the base die, which are interconnected. While SK hynix currently produces HBM3e using its own process for the base die, it will switch to TSMC’s advanced logic process for HBM4. The same report further suggested that SK hynix will highlight achievements at forums, including achieving more than a 20% reduction in power consumption compared to initial targets for HBM4.
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According to a report from Commercial Times, SK Hynix, Samsung, and Micron, the world’s top three memory manufacturers, are actively investing in high-bandwidth memory (HBM) capacity expansion plans. Industry sources cited by the same report estimate that by 2025, the additional production will reach approximately 276,000 units, bringing the total capacity to 540,000 units, an annual increase of 105%.
Regarding the latest developments in HBM, TrendForce indicates that HBM3e will become the market mainstream this year, with shipments concentrated in the second half of the year.
Currently, SK Hynix remains the primary supplier for HBM, along with Micron, both utilizing 1beta nm processes and already shipping to NVIDIA. Samsung, using a 1alpha nm process, is expected to complete qualification in the second quarter and begin deliveries mid-year.
Regarding major memory players’ expansion plans on HBM, Samsung is gradually upgrading its Pyeongtaek facilities (P1L, P2L, and P3L) in South Korea to be used for DDR5 and HBM. Meanwhile, the Hwaseong facilities (Line 13, 15, and 17) are being upgraded to the 1α process, retaining only a small portion of capacity at the 1y/1z process to meet the demands of specialized industries such as aerospace.
SK Hynix produces HBM at its M16 production line in Icheon, South Korea, and is upgrading its M14 production line to the 1α/1β process to supply DDR5 and HBM products. Additionally, after receiving clearance from the U.S. government, its Wuxi plant in China is actively upgrading from the 1y/1z process to the 1z/1α process for producing DDR4 and DDR5 products.
Micron’s HBM production is conducted at its Hiroshima plant in Japan, with capacity expected to increase to 25,000 units in the fourth quarter of this year. In the long term, Micron plans to introduce EUV processes (1γ, 1δ) and build a new cleanroom.
In the short term, Micron will utilize its production capacities at the Linkou and Taichung plants in Taiwan, increasing the proportion of 1β process. By the end of 2025, the total production for HBM is expected to reach around 60,000 units.
According to Commercial Times, the HBM production volume of the world’s top three manufacturers will maintain high growth for two consecutive years, with the global total wafer production volume expected to reach approximately 540,000 units per month by the end of 2025.
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(Photo credit: SK Hynix)
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While driving advances in HBM, foundry, and advanced packaging, AI generative applications also boosted the demand and sales of semiconductor equipment.
Recently, Japanese semiconductor equipment giant DISCO announced that its non-consolidated (individual) shipments for April to June 2024 amounted to JPY 85.7 billion, marking a 50.8% year-on-year increase. The quarterly (individual) shipment surpassed the JPY 78.5 billion from January to March 2024, setting a new record high.
DISCO pointed out that the demand for precision processing equipment related to generative AI remains solid; for consumable-type precision processing tools, the demand remains high, align with the operation rates of customers’ equipment.
Semiconductor equipment refers to specialized equipment used in the production of various types of integrated circuits and discrete semiconductor devices, encompassing various products mainly categorized into front-end process equipment and back-end process equipment.
Front-end process equipment is used in the wafer manufacturing process involving products such as lithography machines, etching equipment, thin film deposition equipment, and CMP equipment.
Back-end process equipment is mainly used in the packaging and testing processes of semiconductor products to ensure product quality and reliability. Representative products include dicing equipment, packaging equipment, testing equipment, and wafer dicing saws, which are used to cut wafers into individual chips for subsequent packaging and testing. DISCO is a leading manufacturer in this segment.
Japanese semiconductor equipment holds a significant position globally, gathering numerous renowned companies such as Tokyo Electron, Advantest, Hitachi High-Tech, Nikon, and DISCO.
With the AI boom, the industry believes that sales of Japanese semiconductor equipment will continue to climb up. The Semiconductor Equipment Association of Japan (SEAJ) forecasts that Japan’s semiconductor equipment sales is expected to exceed JPY 4 trillion for the first time in 2024, representing a 15% annual increase, which is projected to surpass JPY 5 trillion by 2026.
This growth is primarily benefited from the increasing demand for AI-driven GPU and HBM. In May 2024, Japanese semiconductor equipment sales surged by 27% YoY, continuing to grow and setting new monthly records.
China’s semiconductor equipment market is also enjoying robust growth driven by favorable factors like AI. Recently, data jointly released by the Semiconductor Equipment and Materials International (SEMI) and SEAJ indicated that in the first quarter of 2024, global semiconductor equipment sales totaled USD 26.4 billion, down 2% YoY and 6% QoQ, which was dragged down by the sluggish demand in some markets.
Despite the headwind globally, China’s sales reached USD 12.52 billion in the first quarter, up by 113% YoY, maintaining its position as the world’s largest semiconductor equipment market for the fourth consecutive quarter.
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(Photo credit: TEL)