As SK hynix and Samsung are releasing their financial results on July 25^th and July 31st, respectively, their progress on HBM3 and HBM3e have also been brought into spotlight. Earlier this week, Samsung is said to eventually passed NVIDIA’s qualification tests for its HBM3 chips. While the Big Three in the memory sector are now almost on the same page, the war between HBM3/ HBM3e is expected to intensify in the second half of 2024.

Samsung Takes a Big Leap

According to reports from Reuters and the Korea Economic Daily, Samsung’s HBM3 chips have been cleared by NVIDIA, which will initially be used exclusively in the AI giant’s H20, a less advanced GPU tailored for the Chinese market. Citing sources familiar with the matter, the reports note that Samsung may begin supplying HBM3 to NVIDIA as early as August.

However, as the U.S. is reportedly considering to implement new trade sanctions on China in October, looking to further limit China’s access to advanced AI chip technology, NVIDIA’s HGX-H20 AI GPUs might face a sales ban. Whether and to what extent would Samsung’s momentum be impacted remains to be seen.

SK hynix Eyes HBM3e to Account > 50% of Total HBM Shipments

SK hynix, as the current HBM market leader, has expressed its optimism in securing the throne on HBM3. According to a report by Business Korea, citing Kim Woo-hyun, vice president and chief financial officer of SK hynix, the company significantly expanded its HBM3e shipments in the second quarter as demand surged.

Moreover, SK hynix reportedly expects its HBM3e shipments to surpass those of HBM3 in the third quarter, with HBM3e accounting for more than half of the total HBM shipments in 2024.

SK hynix started mass production of the 8-layer HBM3e for NVIDIA in March, and now it is also confident about the progress on the 12-layer HBM3e. According to Business Korea, the company expects to begin supplying 12-layer HBM3e products to its customers in the fourth quarter. In addition, it projects the supply of 12-layer products to surpass that of 8-layer products in the first half of 2025.

Micron Expands at Full Throttle

Micron, on the other hand, has reportedly started mass production of 8-layer HBM3e in February, according to a previous report from Korea Joongang Daily. The company is also reportedly planning to complete preparations for mass production of 12-layer HBM3e in the second half and supply it to major customers like NVIDIA in 2025.

Targeting to achieve a 20% to 25% market share in HBM by 2025, Micron is said to be building a pilot production line for HBM in the U.S. and is considering producing HBM in Malaysia for the first time to capture more demand from the AI boom, a report by Nikkei notes. Micron’s largest HBM production facility is located in Taichung, Taiwan, where expansion efforts are also underway.

Earlier in May, a report from a Japanese media outlet The Daily Industrial News also indicated that Micron planned to build a new DRAM plant in Hiroshima, with construction scheduled to begin in early 2026 and aiming for completion of plant buildings and first tool-in by the end of 2027.

TrendForce’s latest report on the memory industry reveals that DRAM revenue is expected to see significant increases of 75% in 2024, driven by the rise of high-value products like HBM. As the market keeps booming, would Samsung come from behind and take the lead in the HBM3e battle ground? Or would SK hynix defend its throne? The progress of 12-layer HBM3e may be a key factor to watch.

Read more

• [News] SK hynix Rumored to Team up with Amkor to Secure HBM Advantage over Samsung
• [News] Samsung’s HBM3e Rumored to be Certified by NVIDIA, Boosting DDR5 Price Increases in Q3

(Photo credit: Samsung)

Global HBM leader, South Korea’s SK hynix, announced its financial report for the last quarter on July 25, exceeding market expectations. According to a report from Economic Daily News, the company also announced a full-scale effort to boost production of high-bandwidth memory (HBM) for AI, with this year’s capital expenditure expected to surpass initial projections. Additionally, more capacity will be allocated for HBM production.

Industry sources cited by the report also indicate that for Taiwanese manufacturers, the major global memory companies are expanding their HBM production capacity by converting existing DRAM capacity to HBM. This shift will suppress the supply of DDR4 and DDR5 DRAM, positively impacting market conditions.

Previously, as per sources cited by the Economic Daily News, it’s indicated that global memory leader Samsung plans to allocate about 30% of its existing DRAM capacity to HBM production. Now, with SK hynix reportedly making similar plans, this may benefit Taiwanese DRAM-related companies like Nanya Technology and ADATA in the future.

Reportedly, Nanya Technology is said to believe that the DRAM market has significantly improved due to the production cuts by the three major memory manufacturers—Samsung, SK hynix, and Micron—in the second half of last year, combined with the strong demand for HBM driven by generative AI. This chain reaction is spreading to various types of DRAM, and the company expects to see clear operational improvements soon.

SK hynix announced yesterday that its Q2 revenue increased by 125% year-on-year to KRW 16.4 trillion (USD 11.9 billion), setting a new record. Operating profit reached KRW 5.47 trillion, the highest since Q3 2018, significantly better than the KRW 2.9 trillion loss in the same period last year. The operating margin was 33%, exceeding expectations, mainly due to a more than 250% surge in HBM sales and an overall increase in DRAM and NAND chip prices.

SK hynix plans to begin mass production of the next-generation 12-layer HBM3e chips this quarter, enhancing its competitive edge over rivals Samsung and Micron in the design and supply of advanced memory for NVIDIA’s AI accelerators. HBM3e is expected to account for about half of all HBM chip sales this year. Additionally, capital expenditure for this year is likely to exceed initial expectations.

SK hynix predicts that the overall memory market will continue to grow in the second half of the year, with DRAM and NAND chip supply becoming tighter and demand for AI servers remaining strong.

Read more

• [News] AI Boosts HBM Demand, SK Hynix’s Q2 Profits Reach Six-Year High
• [News] SK hynix, TSMC, and NVIDIA Reportedly Forge Alliance to Develop Next-Generation HBM

(Photo credit: SK hynix)

Though Samsung has denied the rumor that its HBM3e passed NVIDIA’s qualification tests, multiple Taiwanese companies in the supply chain reportedly learned that the product is expected to receive certification soon, and will start shipping in Q3. As memory manufacturers are said to shift at least 20-30% of their production capacity to HBM, tightening supply further, DDR5 prices in Q3 will reportedly be on the rise.

It is reported that some of Samsung’s supply chain partners have recently received information to place orders and reserve capacity as soon as possible, which indicates the memory giant’s HBM may begin shipments smoothly in the second half of the year. The move may also imply that the internal capacity allocation within Samsung will accelerate, shifting the focus of production lines to HBM.

Taiwanese memory supply chain sources reportedly believe that the news of Samsung’s HBM certification is likely to be confirmed at the upcoming Samsung financial report meeting, which will take place on July 31. It is said that memory manufacturers will relocate at least 20-30% of their production capacity, driving DDR5 prices to rise.

TrendForce notes that a recovery in demand for general servers—coupled with an increased production share of HBM by DRAM suppliers—has led suppliers to maintain their stance on hiking prices. As a result, the ASP of DRAM in Q3 is expected to continue rising, with an anticipated increase of 8–13%. Due to high average inventory levels of DDR4 among buyers, purchasing momentum will be focused on DDR5.

On the other hand, regarding NAND prices in Q3, TrendForce reports that while the enterprise sector continues to invest in server infrastructure, the consumer electronics market remains lackluster. This, combined with NAND suppliers aggressively ramping up production in the second half of the year, is likely to curb the blended price hike to a modest 5–10%.

According to TrendForce’s latest analysis, Samsung’s initial plan to pass NVIDIA’s certification in Q2 was delayed, making it falling behind SK hynix and Micron. Simultaneously, some HBM suppliers also faced lower-than-expected production yields, leading to concerns about a shortage of HBM3e 8hi materials for the H200 GPU shipments starting in Q2 2024.

However, Samsung adjusted its 1alpha nm front-end production process and back-end stacking process in the first half of 2024, leading the industry to expect that sample production could be completed in Q3 2024, followed by product certification.

Read more

• [News] Samsung’s HBM3e Reportedly Passed NVIDIA’s Certification Though It Denies the Rumor
• Demand for Servers to Support Second Half of the Year; DRAM Prices Expected to Increase by 8–13% in Q3, Says TrendForce

(Photo credit: Samsung)

According to a report from BusinessKorea, memory giant SK hynix is deepening its collaboration with TSMC and NVIDIA, and will announce a closer partnership at the Semicon Taiwan exhibition in September.

SK hynix has been collaborating with TSMC for many years. In 2022, TSMC announced the establishment of the OIP 3DFabric Alliance at its North America Technology Symposium, incorporating partners in memory and packaging.

At that time, Kangwook Lee, Senior Vice President and PKG Development Lead at SK hynix, revealed that the company has been closely working with TSMC on previous generations and current high-bandwidth memory (HBM) technologies, supporting compatibility with the CoWoS process and HBM interconnectivity.

After joining the 3DFabric Alliance, SK hynix reportedly plans to deepen its collaboration with TSMC to develop solutions for the next generation of HBM, looking to achieve innovations in system-level products.

SK hynix President, Justin Kim, is reportedly said to be delivering a keynote speech at the International Semiconductor Exhibition in Taipei in September, marking SK hynix’s first participation in such a keynote address. Following the speech, Kim will engage in discussions with senior executives from TSMC, possibly including NVIDIA CEO Jensen Huang, to discuss collaborative plans for the next generation of HBM. This move is expected to further solidify the trilateral alliance between SK hynix, TSMC, and NVIDIA.

Notably, the collaboration among the three giants was hinted in the first half of this year. On April 25th, SK Group Chairman Chey Tae-won traveled to Silicon Valley to meet with NVIDIA CEO Jensen Huang, potentially related to these strategies.

Reportedly, SK hynix will adopt TSMC’s logic process to manufacture the base die for HBM (High Bandwidth Memory). Reports indicate that SK hynix and TSMC have agreed to collaborate on the development and production of HBM4, scheduled for mass production in 2026.

HBM stacks core chips vertically on the base die, which are interconnected. While SK hynix currently produces HBM3e using its own process for the base die, it will switch to TSMC’s advanced logic process for HBM4. The same report further suggested that SK hynix will highlight achievements at forums, including achieving more than a 20% reduction in power consumption compared to initial targets for HBM4.

Read more

• [News] TSMC Reportedly Secures Another AI Opportunity, Winning Order from SK Hynix
• [News] Booming Sales of Japanese Semiconductor Equipment Continue to Break Records, Reportedly Surpassing JPY 300 Billion

(Photo credit: SK hynix)

According to a report from Commercial Times, SK Hynix, Samsung, and Micron, the world’s top three memory manufacturers, are actively investing in high-bandwidth memory (HBM) capacity expansion plans. Industry sources cited by the same report estimate that by 2025, the additional production will reach approximately 276,000 units, bringing the total capacity to 540,000 units, an annual increase of 105%.

Regarding the latest developments in HBM, TrendForce indicates that HBM3e will become the market mainstream this year, with shipments concentrated in the second half of the year.

Currently, SK Hynix remains the primary supplier for HBM, along with Micron, both utilizing 1beta nm processes and already shipping to NVIDIA. Samsung, using a 1alpha nm process, is expected to complete qualification in the second quarter and begin deliveries mid-year.

Regarding major memory players’ expansion plans on HBM, Samsung is gradually upgrading its Pyeongtaek facilities (P1L, P2L, and P3L) in South Korea to be used for DDR5 and HBM. Meanwhile, the Hwaseong facilities (Line 13, 15, and 17) are being upgraded to the 1α process, retaining only a small portion of capacity at the 1y/1z process to meet the demands of specialized industries such as aerospace.

SK Hynix produces HBM at its M16 production line in Icheon, South Korea, and is upgrading its M14 production line to the 1α/1β process to supply DDR5 and HBM products. Additionally, after receiving clearance from the U.S. government, its Wuxi plant in China is actively upgrading from the 1y/1z process to the 1z/1α process for producing DDR4 and DDR5 products.

Micron’s HBM production is conducted at its Hiroshima plant in Japan, with capacity expected to increase to 25,000 units in the fourth quarter of this year. In the long term, Micron plans to introduce EUV processes (1γ, 1δ) and build a new cleanroom.

In the short term, Micron will utilize its production capacities at the Linkou and Taichung plants in Taiwan, increasing the proportion of 1β process. By the end of 2025, the total production for HBM is expected to reach around 60,000 units.

According to Commercial Times, the HBM production volume of the world’s top three manufacturers will maintain high growth for two consecutive years, with the global total wafer production volume expected to reach approximately 540,000 units per month by the end of 2025.

Read more

• [News] Samsung Establishes New HBM Team to Advance HBM3, HBM3e and HBM4 Development
• HBM3e Production Surge Expected to Make Up 35% of Advanced Process Wafer Input by End of 2024, Says TrendForce

(Photo credit: SK Hynix)