HBM3e


2024-07-26

[News] SK hynix Financial Report Exceeds Expectations, with Predicted Memory Capacity Allocation Benefiting Taiwanese Manufacturers

Global HBM leader, South Korea's SK hynix, announced its financial report for the last quarter on July 25, exceeding market expectations. According to a report from Economic Daily News, the company also announced a full-scale effort to boost production of high-bandwidth memory (HBM) for AI, with thi...

2024-07-16

[News] Samsung’s HBM3e Rumored to be Certified by NVIDIA, Boosting DDR5 Price Increases in Q3

Though Samsung has denied the rumor that its HBM3e passed NVIDIA’s qualification tests, multiple Taiwanese companies in the supply chain reportedly learned that the product is expected to receive certification soon, and will start shipping in Q3. As memory manufacturers are said to shift at least ...

2024-07-11

[News] SK hynix, TSMC, and NVIDIA Reportedly Forge Alliance to Develop Next-Generation HBM

According to a report from BusinessKorea, memory giant SK hynix is deepening its collaboration with TSMC and NVIDIA, and will announce a closer partnership at the Semicon Taiwan exhibition in September. SK hynix has been collaborating with TSMC for many years. In 2022, TSMC announced the establi...

2024-07-10

[News] Samsung, SK Hynix and Micron Ramp Up HBM Production, Reportedly Doubling Output Next Year

According to a report from Commercial Times, SK Hynix, Samsung, and Micron, the world's top three memory manufacturers, are actively investing in high-bandwidth memory (HBM) capacity expansion plans. Industry sources cited by the same report estimate that by 2025, the additional production will r...

2024-07-05

[News] Samsung Establishes New HBM Team to Advance HBM3, HBM3e and HBM4 Development

In order to address the growing demand for high-performance memory solutions fueled by the expansion of the artificial intelligence (AI) market, Samsung Electronics has formed a new "HBM Development Team" within its Device Solutions (DS) Division to enhance its competitive edge in high-bandwidth mem...

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