While still working in the final stage of HBM3e qualification with NVIDIA, Samsung Electronics is also advancing in the AI memory market with custom high bandwidth memory (HBM) solutions. According to reports by PassionateGeekz and China Flash Market, the memory giant is collaborating with major clients, such as AMD and Apple, to develop tailored HBM products, which are expected to be commercially available in the era of HBM4.

Citing Choi Jang-seok, head of Samsung’s new business planning team at memory division, the reports note that many customers of Samsung are switching from traditional, general HBM to customized products, as the latter promises better performance, power and area (PPA), while offering greater value than current options.

PassionateGeekz notes that at the Samsung Foundry Forum 2024 earlier this week, Choi further highlighted two forms of customized HBM Samsung has been developing. It is worth noting that Samsung is developing a large-capacity HBM4 memory with a single stack capacity of 48GB, which is expected to enter production in 2025.

On the other hand, Samsung also illustrated the innovation of the 3D stacking of HBM DRAM and customer-specific logic chips. By bypassing the interposer and base die required in the existing 2.5D packaging solution, the HBM chip can be directly integrated into the computing SoC in 3D. Samsung’s custom HBM, therefore, by eliminating intermediaries and substrates, can significantly reduce power and area.

TrendForce also observed that for HBM4, standard processes and capacities have been settled. The three major suppliers are in the development stage, with each buyer initiating custom requests. For future generations of HBM, new directions have been proposed, as HBM may no longer be just arranged next to the SoC main chip but could also stack directly on top of it.

While all the options are still under feasibility discussion and not finalized, TrendForce believes the future HBM industry will shift towards more customized production. Compared to other DRAM products, this approach aims to break away from the framework of commodity DRAM in terms of pricing and design, offering more specialized solutions.

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• [News] Samsung Establishes New HBM Team to Advance HBM3, HBM3e and HBM4 Development
• [News] Overview of Expansion Plans by HBM Giants

(Photo credit: Samsung)

According to a report from BusinessKorea, memory giant SK hynix is deepening its collaboration with TSMC and NVIDIA, and will announce a closer partnership at the Semicon Taiwan exhibition in September.

SK hynix has been collaborating with TSMC for many years. In 2022, TSMC announced the establishment of the OIP 3DFabric Alliance at its North America Technology Symposium, incorporating partners in memory and packaging.

At that time, Kangwook Lee, Senior Vice President and PKG Development Lead at SK hynix, revealed that the company has been closely working with TSMC on previous generations and current high-bandwidth memory (HBM) technologies, supporting compatibility with the CoWoS process and HBM interconnectivity.

After joining the 3DFabric Alliance, SK hynix reportedly plans to deepen its collaboration with TSMC to develop solutions for the next generation of HBM, looking to achieve innovations in system-level products.

SK hynix President, Justin Kim, is reportedly said to be delivering a keynote speech at the International Semiconductor Exhibition in Taipei in September, marking SK hynix’s first participation in such a keynote address. Following the speech, Kim will engage in discussions with senior executives from TSMC, possibly including NVIDIA CEO Jensen Huang, to discuss collaborative plans for the next generation of HBM. This move is expected to further solidify the trilateral alliance between SK hynix, TSMC, and NVIDIA.

Notably, the collaboration among the three giants was hinted in the first half of this year. On April 25th, SK Group Chairman Chey Tae-won traveled to Silicon Valley to meet with NVIDIA CEO Jensen Huang, potentially related to these strategies.

Reportedly, SK hynix will adopt TSMC’s logic process to manufacture the base die for HBM (High Bandwidth Memory). Reports indicate that SK hynix and TSMC have agreed to collaborate on the development and production of HBM4, scheduled for mass production in 2026.

HBM stacks core chips vertically on the base die, which are interconnected. While SK hynix currently produces HBM3e using its own process for the base die, it will switch to TSMC’s advanced logic process for HBM4. The same report further suggested that SK hynix will highlight achievements at forums, including achieving more than a 20% reduction in power consumption compared to initial targets for HBM4.

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• [News] TSMC Reportedly Secures Another AI Opportunity, Winning Order from SK Hynix
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(Photo credit: SK hynix)

In order to address the growing demand for high-performance memory solutions fueled by the expansion of the artificial intelligence (AI) market, Samsung Electronics has formed a new “HBM Development Team” within its Device Solutions (DS) Division to enhance its competitive edge in high-bandwidth memory (HBM), according to the latest report from Business Korea. The new team will concentrate on advancing the progress on HBM3, HBM3e, and the next-generation HBM4 technologies, the report noted.

This initiative comes shortly after the Korean memory giant changed its semiconductor business leader in May. Citing industry sources, the report stated that Samsung’s DS Division carried out an organizational restructuring centered on the establishment of the HBM Development Team.

Also, the move attracts attention as on July 4th, a report from Korea media outlet Newdaily indicated that Samsung has finally obtained approval from NVIDIA for qualification of its 5th generation HBM, HBM3e, though the company denied the market rumor afterwards.

Samsung has a long history of dedicating to HBM development. Since 2015, it has maintained an HBM development organization within its Memory Business Division. Earlier this year, the tech heavyweight also created a task force (TF) to boost its HBM competitiveness, and the new team will unify and enhance these ongoing efforts, the report noted.

According to the report, Samsung reached a significant milestone in February by developing the industry’s first HBM3e 12-layer stack, which offers the industry’s largest capacity of 36 gigabytes (GB). Samples of the HBM3e 8-layer and 12-layer stacks have already been sent to NVIDIA for quality testing.

Regarding the latest development, TrendForce reports that Samsung is still collaborating with NVIDIA and other major customers on the qualifications for both 8-hi and 12-hi HBM3e products. Samsung anticipates that its HBM3e qualification will be partially completed by the end of 3Q24.

According to TrendForce’s latest analysis on the HBM market, HBM production will be prioritized due to its profitability and increasing demand. However, limited yields of around 50–60% and a wafer area 60% larger than DRAM products mean a higher proportion of wafer input is required. Based on the TSV capacity of each company, HBM is expected to account for 35% of advanced process wafer input by the end of this year, with the remaining wafer capacity used for LPDDR5(X) and DDR5 products.

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• [News] Samsung’s HBM3e Reportedly Passed NVIDIA’s Certification Though It Denies the Rumor
• HBM3e Production Surge Expected to Make Up 35% of Advanced Process Wafer Input by End of 2024, Says TrendForce

(Photo credit: Samsung)

Driven by memory giants ramping up high-bandwidth memory (HBM) production, according to a report from Korean media outlet TheElec, ASMPT, a back-end equipment maker, has supplied a demo thermal compression (TC) bonder for Micron’s HBM production.

TC bonders play a pivotal role in HBM production by employing thermal compression to bond and stack chips on processed wafers, thereby significantly influencing HBM yield.

ASMPT is reportedly collaborating with the US memory giant to co-develop a TC bonder for use in HBM4 production. Notably, ASMPT has supplied TC bonders to SK Hynix as well and plans to deliver more units later in the year.

Micron is also procuring TC bonders from Shinkawa and Hanmi Semiconductor for the production of HBM3e. However, as per the same report citing sources, Shinkawa has its handful in supplying the bonders to its largest customer, so Micron added Hanmi Semiconductor as a secondary supplier.

In addition to Micron, Samsung Electronics and SK Hynix have developed distinct supply chains for TC bonders. Samsung sources its equipment from Japan’s Toray and Sinkawa, as well as its subsidiary SEMES. In contrast, SK Hynix relies on Singapore’s ASMPT, HANMI Semiconductor, and Hanhwa Precision Machinery.

According to industry sources cited by The Chosun Daily, TC bonder orders driven by memory giants have been strong, as Samsung Electronics’ subsidiary SEMES has delivered nearly 100 TC bonders over the past year. Meanwhile, SK Hynix has inked a approximately $107.98 million contract with HANMI Semiconductor, which commands a 65% share of the TC bonder market.

Regarding the latest developments in HBM, TrendForce indicates that HBM3e will become the market mainstream this year, with shipments concentrated in the second half of the year. Currently, SK hynix remains the primary supplier, along with Micron, both utilizing 1beta nm processes and already shipping to NVIDIA.

According to TrendForce predictions, the annual growth rate of HBM demand will approach 200% in 2024 and is expected to double in 2025.

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• [News] Rising HBM Production by Samsung and SK Hynix Energizes Korea’s TC Bonder Industry
• [News] Micron’s HBM Expansion at Full Throttle: Rumored to Expand in US, Malaysia Also an Option

(Photo credit: Micron)

According to a report by the Economic Daily News, TSMC has secured another AI business opportunity. Following its exclusive contract manufacturing of AI chips for tech giants such as NVIDIA and AMD, TSMC, in collaboration with its subsidiary, the ASIC design service provider Global Unichip Corporation (GUC), has reportedly made significant progress in producing essential peripheral components for AI servers, specifically high-bandwidth memory (HBM). Together, they have secured a major order for the foundational base die chips of next-generation HBM4.

TSMC and GUC typically do not comment on order details. SK Hynix, on the other hand,  has clarified in a press release to Bloomberg that it has not signed a contract with GUC for its next-generation AI memory chips, according to the Economic Daily News.

Industry sources cited by the report point out that the strong demand for AI is not only making high-performance computing (HPC) related chips highly sought after, but also driving robust demand for HBM, creating new market opportunities. This surge in demand has attracted major memory manufacturers such as SK Hynix, Samsung, and Micron to actively invest. Under the influence of AI engines, the current production capacity for HBM3 and HBM3e is in a state of supply shortage.

As AI chip manufacturing advances to the 3nm generation next year, the existing HBM3 and HBM3e, limited by capacity and speed constraints, may prevent the new generation of AI chips from reaching their maximum computational power. Consequently, the three major memory manufacturers are unanimously increasing their capital expenditures and starting to invest in the development of next-generation HBM4 products, aiming for mass production by the end of 2025 and large-scale shipments by 2026.

While memory manufacturers are delving into the research and development of next-generation HBM4, the semiconductor standardization organization JEDEC Solid State Technology Association is also busy establishing new standards related to HBM4. It’s also rumored that JEDEC will relax the stacking height limit for HBM4 to 775 micrometers, hinting that the previously required advanced packaging technology using hybrid bonding can be postponed until the next generation of HBM specifications.

Industry sources cited by the report also suggest that the most significant change in HBM4, besides increasing the stacking height to 16 layers of DRAM, will be the addition of a logic IC at the base to enhance bandwidth transmission speed. This logic IC, known as the base die, is expected to be the major innovation in the new generation of HBM4 and possibly a reason for JEDEC’s relaxation of the stacking height limitation.

On the other hand, SK Hynix has announced its collaboration with TSMC to advance HBM4 and capture opportunities in advanced packaging. Industry sources also indicate that GUC has successfully secured the critical design order for SK Hynix’s HBM4 base die.

The design is expected to be finalized as early as next year, with production to be carried out using TSMC’s 12nm and 5nm processes, depending on whether high performance or low power consumption is prioritized.

Reportedly, it’s suggested that SK Hynix’s decision to entrust the base die chip orders to GUC and TSMC is primarily because TSMC currently dominates over 90% of the CoWoS advanced packaging market used in HPC chips.

Read more

• [News] SK Hynix Disclosed Details Regarding HBM4e, Reportedly Integrating Computing and Caching Functionalities
• [News] SK Hynix Partners with TSMC to Strengthen HBM Technological Leadership

(Photo credit: TSMC)