During the “SEMICON Korea 2024” event held recently in Seoul, Chun-hwan Kim, Vice President of global memory giant SK hynix, revealed that the company’s HBM3e has entered mass production, with plans to commence large-scale production of HBM4 in 2026.

According to a report from Business Korea, Chun-hwan Kim stated that SK hynix’s HBM3e memory is currently in mass production, with plans to initiate mass production of HBM4 in 2026.

He noted that with the advent of the AI computing era, generative AI is rapidly advancing, and the market is expected to grow at a rate of 35% annually. The rapid growth of the generative AI market requires a significant number of higher-performance AI chips to support it, further driving the demand for higher-bandwidth memory.

He further commented that the semiconductor industry would face intense survival competition this year to meet the increasing demand and customer needs for memory.

Kim also projected that the HBM market would grow by 40% by 2025, with SK hynix already strategically positioning itself in the market and planning to commence production of HBM4 in 2026.

Meanwhile, previous reports have also indicated that SK hynix expected to establish an advanced packaging facility in the state of Indiana, USA, to meet the demands of American companies, including NVIDIA.

Driven by the wave of AI advancement and demand from China, the Ministry of Trade, Industry and Energy of South Korea recently announced that South Korea’s semiconductor product exports experienced a rebound in 2024. In January, exports reached approximately USD 9.4 billion, marking a year-on-year increase of 56.2% and the largest growth in 73 months.

TrendForce has previously reported the progress of HBM3e, as outlined in the timeline below, which shows that SK hynix already provided its 8hi (24GB) samples to NVIDIA in mid-August.

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(Photo credit: SK hynix)

Market reports suggest Nvidia’s new product release cycle has shortened from two to a year, sparking intense competition among major memory companies in the realm of next-gen High Bandwidth Memory (HBM) technology. Samsung, SK Hynix, and Micron are fervently competing, with SK Hynix currently holding the dominant position in the HBM market. However, Micron and Samsung are strategically positioned, poised for a potential overtake, reported by TechNews.

Current Status of the HBM Industry

SK Hynix made a breakthrough in 2013 by successfully developing and mass-producing HBM using the Through Silicon Via (TSV) architecture. In 2019, they achieved success with HBM2E, maintaining the overwhelming advantage in the HBM market. According to the latest research from TrendForce, Nvidia plan to partner with more HBM suppliers. Samsung, as one of the suppliers, its HBM3 (24GB) is anticipated to complete verification with NVIDIA by December this year.

Regarding HBM3e progress, Micron, SK Hynix, and Samsung provided 8-layer (24GB) Nvidia samples in July, August, and October, respectively, with the fastest verification expected by year-end. All three major players anticipate completing verification in the first quarter of 2024.

As for HBM4, the earliest launch is expected in 2026, with a stack increase to 16 layers from the existing 12 layers. The memory stack will likely adopt a 2048-bit memory stack connection interface, driving demand for the new “Hybrid Bonding” stacking method. The 12-layer HBM4 product is set to launch in 2026, followed by the 16-layer product expected in 2027.

Navigating HBM4, the New Technologies and Roadmaps of Memory Industry Leaders

SK Hynix

According to reports from Business Korea, SK Hynix is preparing to adopt “2.5D Fan-Out” packaging for the next-generation HBM technology. This move aims to enhance performance and reduce packaging costs. This technology, not previously used in the memory industry but common in advanced semiconductor manufacturing, is seen as having the potential to “completely change the semiconductor and foundry industry.” SK Hynix plans to unveil research results using this packaging method as early as next year.

The 2.5D Fan-Out packaging technique involves arranging two DRAM horizontally and assembling them similar to regular chips. The absence of a substrate beneath the chips allows for thinner chips, significantly reducing the thickness when installed in IT equipment. Simultaneously, this technique bypasses the Through Silicon Via (TSV) process, providing more Input/Output (I/O) options and lowering costs. 

According to their previous plan, SK Hynix aims to mass-produce the sixth-generation HBM (HBM4) as early as 2026. The company is also actively researching “Hybrid Bonding” technology, likely to be applied to HBM4 products.

Currently, HBM stacks are placed on the interposer next to or GPUs and are connected to their interposer. While SK Hynix’s new goal is to eliminate the interposer completely, placing HBM4 directly on GPUs from companies like Nvidia and AMD, with TSMC as the preferred foundry.

Samsung

Samsung is researching the application of photonics in HBM technology’s interposer layer, aiming to address challenges related to heat and transistor density. Yan Li, Principal Engineer in Samsung’s advanced packaging team, shared insights at the OCP Global Summit in October 2023.

(Image: Samsung)

According to Samsung, The industry has made significant strides in integrating photonics with HBM through two main approaches. One involves placing a photonics interposer between the bottom packaging layer and the top layer containing GPU and HBM, acting as a communication layer. However, this method is costly, requiring an interposer and photon I/O for logic chips and HBM.

(Image: Samsung)

The alternative approach separates the HBM memory module from packaging, directly connecting it to the processor using photonics. Rather than dealing with the complexity of packaging, a more efficient approach is to separate the HBM memory module from the chip itself and connect it to the logic IC using photonics technology. This approach not only simplifies the manufacturing and packaging costs for HBM and logic ICs but also eliminates the need for internal digital-to-optical conversions in the circuitry. However, careful attention is required to address heat dissipation.

Micron

As reported by Tom’s Hardware, Micron’s 8-layer HBM3e (24GB) is expected to launch in early 2024, contributing to improved AI training and inference performance. The 12-layer HBM3e (36GB) chip is expected to debut in 2025.

Micron is working on HBM4 and HBM4e along with other companies. The required bandwidth is expected to exceed 1.5 TB/s. Micron anticipates launching 12-layer and 16-layer HBM4 with capacities of 36GB to 48GB between 2026 and 2027. After 2028, HBM4E will be introduced, pushing the maximum bandwidth beyond 2+ TB/s and increasing stack capacity to 48GB to 64GB.

Micron is taking a different approach from Samsung and SK Hynix by not integrating HBM and logic chips into a single die, suggested by Chinese media Semiconductor Industry Observation. This difference in strategy may lead to distinct technical paths, and Micron might advise Nvidia, Intel, AMD that relying solely on the same company’s chip carries greater risks.

(Image: Micron)

TSMC Aids Memory Stacking       

Currently, TSMC 3DFabric Alliance closely collaborates with major memory partners, including Micron, Samsung, and SK Hynix. This collaboration ensures the rapid growth of HBM3 and HBM3e, as well as the packaging of 12-layer HBM3/HBM3e, by providing more memory capacity to promote the development of generative AI.

(Image: TSMC)

(Image: SK Hynix)

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• Continuous Rise in HBM Demand, Memory Giants Expecting HBM4 Delivery in 2025

Amidst the AI boom, HBM technology steps into the spotlight as market demand continues to surge. Global market research firm TrendForce anticipates a 58% year-on-year increase in HBM demand in 2023, with a potential additional growth of approximately 30% in 2024.

Compared to traditional DRAM, HBM (High Bandwidth Memory) boasts advantages such as high bandwidth, high capacity, low latency, and low power consumption. These attributes accelerate AI data processing and make it particularly well-suited for high-performance computing scenarios like ChatGPT. As a result, it has gained popularity, and major storage manufacturers are actively driving HBM technology upgrades.

Leading memory manufacturers are intensifying their efforts, with Samsung set to introduce HBM4.

Since the inception of the first HBM products utilizing TSV packaging technology in 2014, HBM technology has seen multiple upgrades, including HBM, HBM2, HBM2E, HBM3, and HBM3e.

Regarding the SK Hynix and Samsung, two major South Korean companies, have been at the forefront of HBM3 development. NVIDIA’s H100/H800 and AMD’s MI300 series, represent HBM3’s progress. Both SK Hynix and Samsung expected to offer HBM3e samples by the first quarter of 2024. On the other hand, Micron, a U.S.-based memory company, is bypassing HBM3 and directly pursuing HBM3e.

HBM3e will feature 24Gb mono die stacks, and with an 8-layer (8Hi) configuration, a single HBM3e chip’s capacity will soar to 24GB. This advancement is expected to be incorporated into NVIDIA’s GB100 in 2025, leading the three major OEMs to plan HBM3e sample releases in the first quarter of 2024 and enter mass production in the latter half of the year.

In addition to HBM3 and HBM3e, the latest updates indicate that storage giants are planning the launch of the next generation of HBM—HBM4.

Samsung recently announced that it has developed 9.8Gbps HBM3E and is planning to provide samples to customers. Furthermore, Samsung is actively working on HBM4 with a goal to begin supply in 2025. It’s reported that Samsung Electronics is developing technologies such as non-conductive adhesive film (NCF) assembly for optimizing high-temperature thermal characteristics, as well as hybrid bonding (HCB), for HBM4 products.

In September, Korean media reported that Samsung is gearing up to revamp its production process and launch HBM4 products to capture the rapidly growing HBM market. HBM4 memory stacks will feature a 2048-bit memory interface, a significant departure from the previous 1024-bit interface for all HBM stacks. This enhanced interface width holds great significance for the evolution of HBM4.

While HBM4 promises a major breakthrough, it is still a ways off, making it too early to discuss its practical applications and widespread adoption. Industry experts emphasize that the current HBM market is dominated by HBM2e. However, HBM3 and HBM3e are poised to take the lead in the near future.

According to TrendForce’s research, HBM2e currently accounts for the mainstream market share, being used in various products like NVIDIA A100/A800, AMD MI200, and many AI accelerators developed by CSPs. To keep pace with the evolving demands of AI accelerator chips, OEMs are planning to introduce new HBM3e products in 2024, with HBM3 and HBM3e expected to become the market’s primary players next year.

In terms of the demand transition between different HBM generations, TrendForce estimates that in 2023, mainstream demand will shift from HBM2e to HBM3, with estimated demand shares of approximately 50% and 39%, respectively. As more HBM3-based accelerator chips enter the market, demand will substantially shift toward HBM3 in 2024, surpassing HBM2e and accounting for an estimated 60% of the market. This transition, coupled with higher average selling prices (ASP), is poised to significantly drive HBM revenue growth next year.

(Photo credit: Samsung)