Micron, the American memory giant, is gearing up to initiate the production of state-of-the-art “1γ” DRAM at its Hiroshima fab in Japan, starting in 2025. Concurrently, there are plans to manufacture High-Bandwidth Memory (HBM) at the same fab, tailored for the rising demand for generative AI applications.

According to a report from Nikkei Asia on December 13th, Joshua Lee, VP at Micron Memory Japan, made this announcement during the event SEMICON Japan 2023. Lee highlighted that the Hiroshima fab is slated to manufacture DRAM with the most advanced “1γ” process by 2025. He also pointed out that Micron is also going to be the first semiconductor company to introduce Extreme Ultraviolet (EUV) lithography equipment to Japan.

In addition to this, Lee shared insights into Micron’s intentions to produce HBM at the Hiroshima fab, which is widely applied for generative AI applications. He stated that Japan’s strong semiconductor ecosystem will be a key driving force behind Micron’s progress. Furthermore, he emphasized that collaboration is pivotal for Japan to establish itself as a global leader in the semiconductor supply chain.

Earlier In October, the Ministry of Economy, Trade, and Industry (METI) of Japan announced a substantial subsidy of JPY 192 billion for Micron’s Hiroshima fab. Micron has recently declared a comprehensive investment plan of JPY 500 billion in Japan over the next few years, encompassing the Hiroshima fab.

Micron has been actively developing its DRAM manufacturing operations in Japan and Taiwan. Donghui Lu, Corporate VP of Micron Taiwan, revealed in a September interview with the UDN News that approximately 65% of Micron’s DRAM output originates from Taiwan. Regarding the migration to the 1β process, mass production began at Micron Japan last year, and Micron Taiwan has also commenced mass production this year. As for the more advanced 1γ process, production is expected to take place in both Taiwan and Japan by 2025.

TrendForce’s analysis has also revealed that Micron is leveraging its 1β nm technology to produce HBM3e in a bid to gain a competitive edge over Korean suppliers. Its front-end manufacturing is strategically positioned in Japan, aligning with expansion plans for 1β nm capacity.

Additionally, Micron has established a backend factory in Taiwan to meet surging HBM demands driven by the AI era. TrendForce anticipates that HBM products will substantially boost the revenue of DRAM suppliers in 2024.

(Image: Micron)

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