Intel


2024-06-21

[News] New Battleground for TSMC, Samsung & Intel in Panel-Level Packaging

According to a previous report from Nikkei citing sources, TSMC is rumored to be entering the fan-out panel-level packaging sector. As cited in a report from UDN, Intel and Samsung have also announced plans to invest in this area. With TSMC, the leading wafer foundry, joining the fray, the three semiconductor giants are set to compete in fan-out panel-level packaging.

TSMC stated yesterday that the company is closely monitoring the progress and development of advanced packaging technologies, including panel-level packaging technology.

Nikkei reported that in response to future AI demand trends, TSMC is collaborating with equipment and material suppliers to develop new advanced chip packaging technology. This technology uses a rectangular substrate for packaging, replacing the current traditional circular wafer, to accommodate more chipsets on a single wafer. The report further mentioned that TSMC’s research is still in its early stages and might take several years to commercialize, but it represents a significant technological shift.

Reportedly, TSMC previously considered the challenge of using rectangular substrates to be too high, requiring substantial time and effort from both the company and its suppliers, along with upgrades or replacements of many production tools and materials.

Nikkei  also mentioned that TSMC is currently experimenting with rectangular substrates measuring 515 mm in length and 510 mm in width, providing more than three times the usable area of a 12-inch wafer.

TSMC is expanding its advanced chip packaging capacity, with the expansion of the Taichung plant mainly for NVIDIA, while the Tainan plant is primarily for Amazon and its chip design partner Alchip Technologies.

TSMC’s CoWoS advanced chip packaging can combine two sets of NVIDIA Blackwell GPU chips and eight sets of high-bandwidth memory (HBM). As single chips need to accommodate more transistors and integrate more memory, the mainstream 12-inch wafer might not be sufficient for packaging advanced chips in two years.

Samsung and Intel have also recognized the aforementioned issues and are investing in next-generation advanced packaging technologies.

Samsung currently offers advanced packaging services such as I-Cube 2.5D packaging, X-Cube 3D IC packaging, and 2D FOPKG packaging. For applications requiring low-power memory integration, such as mobile phones or wearable devices, Samsung already provides platforms like fan-out panel-level packaging and fan-out wafer-level packaging.

Intel is planning to launch the industry’s first glass substrate solution for next-generation advanced packaging, with mass production scheduled between 2026 and 2030. Intel anticipates that data centers, AI, and graphics processing—markets that require larger volume packaging and higher-speed applications and workloads—will be the first to adopt this technology.

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(Photo credit: Intel)

Please note that this article cites information from Nikkei and UDN.

2024-06-20

[News] Intel Claims Its Datacenter-oriented 3nm Enters High-volume Production

While TSMC faces overwhelming demand for its 3nm technology, with orders from major clients like Apple and NVIDIA pouring in, Intel has now announced its progress on the 3nm technology. According to the latest report by Tom’s Hardware, Intel 3 has entered high-volume production at two sites, the Oregon and Ireland factories, with datacenter-related applications being the node’s primary focus.

However, the capacity seems to be mainly allocated to in-house chips for now. Citing Walid Hafez, Vice President of Foundry Technology Development at Intel, the report notes that Intel’s recently launched Xeon 6 “Sierra Forest” and “Granite Rapids” processors are being manufactured with the company’s 3nm node. Eventually, Intel will utilize this production node to produce datacenter-grade processors for its customers, the report states.

According to Tom’s Hardware, in addition to the standard Intel 3, Intel will also provide various versions for its 3nm node. The semiconductor giant plans to offer Intel 3T, which supports through silicon vias and can serve as a base die. Looking ahead, Intel aims to introduce the feature-enhanced Intel 3-E for chipsets and storage applications, as well as the performance-enhanced Intel 3-PT, designed for various workloads such as AI, HPC, and general-purpose PCs.

According to the report, the Intel 3 process offers both higher performance and increased transistor density, and it supports 1.2V for ultra-high-performance applications. In terms of performance, Intel claims that the new node will deliver an 18% improvement compared to Intel 4.

Regarding major competitors’ development on the 3nm node, TSMC is reported to receive strong demand from clients like Apple and NVIDIA, booking its capacity through 2026, and possibly leading to a price increase by over 5% in the node.

Like Intel, TSMC also offers various choices for its 3nm process. The members of TSMC’s 3nm family include N3, N3E, N3P, as well as N3X and N3A.

As the existing N3 technology continues to be upgraded, N3E, which began mass production in the fourth quarter of last year, targets applications such as AI accelerators, high-end smartphones, and data centers.

N3P is scheduled for mass production in the second half of this year and is expected to become mainstream for applications in mobile devices, consumer products, base stations, and networking through 2026. N3X and N3A are customized for high-performance computing and automotive clients.

On the other hand, Samsung’s second-generation 3nm production line in South Korea will reportedly commence operations in the latter half of this year  The first product to be manufactured on this line will reportedly be the application processor (AP) for the upcoming Galaxy Watch7, tentatively named “Exynos W1000,” which is expected to be unveiled in July.

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(Photo credit: Intel)

Please note that this article cites information from Tom’s Hardware.
2024-06-19

[News] Semiconductor Talent War Heats up, as NVIDIA Emerges as the Biggest Winner

As tech heavyweights eagerly pursue more market share in the AI sector, the battle for talents in the semiconductor industry has also heated up. According to the latest report by The Chosun Daily, citing LinkedIn data as of June 18, NVIDIA has become the hottest tech talent hub, not only drawing talents from semiconductor giants, but recruiting from memory companies in full swing.

According to the report, NVIDIA employs 89 former TSMC employees, while only 12 former NVIDIA employees have joined TSMC. Moreover, comparing with the number of former NVIDIA employees now at Samsung (278), there are 515 NVIDIA employees coming from Samsung Electronics, which indicates a significant talent migration to the GPU giant.

Regarding the talent war between NVIDIA and Intel, the former has attracted as many as 2,848 employees from Intel, whereas only 544 former NVIDIA employees have joined Intel.

NVIDIA also attracts talents with its charisma in AI from other memory giants. The LinkedIn data cited by the report shows that there are 38 NVIDIA employees previously with SK hynix, with none moving in the opposite direction. In addition, NVIDIA has attracted 159 employees from Micron, whereas only 38 former NVIDIA employees have joined Micron.

Interestingly enough, though Samsung lags behind in the competition with TSMC regarding the advanced nodes, it seems to be attractive to talents from the world’s largest foundry. Data show that there are 195 TSMC employees transitioning to Samsung, while only 24 former employees have joined TSMC.

An industry insider cited by the report observed that Korean semiconductor companies are vigorously recruiting for high-performance memory positions, such as those involving HBM. Moreover, a growing number of master’s and doctoral-level semiconductor experts in South Korea are joining the industry, showing a trend where talent moves from academia to local companies and then to international firms.

(Photo credit: NVIDIA)

Please note that this article cites information from The Chosun Daily.
2024-06-19

[News] Samsung Reportedly Delays Its Texas Fab, Mulling Upgrade from 4nm to 2nm

Samsung is reportedly mulling to update its fabrication capabilities in the Taylor fab near Austin from 4nm to 2nm, and delaying the related equipment orders, according to reports from Tom’s Hardware and Korea media outlet ETnews. The decision is said to be made in Q3 2024.

Samsung’s initial projection, announced in 2021 when the investment plan was disclosed, had anticipated the Taylor plant to start its mass production of 4nm in the second half of 2024. But afterwards, the tech giant has reportedly postponed the schedule to 2025.

Now, according to the latest reports, with the AI hardware race intensifying and Nvidia, one of Samsung’s biggest clients, keeps advancing in its GPU platforms, 4nm production may no longer suffice. Therefore, Samsung has postponed its equipment orders for the Taylor fab as it considers the upgrade from 4nm to 2nm. The plant may not begin operations until 2026, US local media MySA noted.

According to information from Samsung’s press release, the company plans to provide one-stop solution for clients to expedite their production of AI chips, while its updated 2nm node with backside power delivery is expected to enter the market in 2027. SF4U, its high-value 4nm variant that offers PPA improvements by incorporating optical shrink, plans to enter mass production in 2025.

Earlier in April, the U.S. government announced that it will provide up to USD 6.4 billion in subsidies to Samsung for expanding advanced chip production capacity at its Texas plant, while it previously approved subsidies of up to USD 8.5 billion for US chip giant Intel and USD 6.6 billion for TSMC, respectively.

Regarding major semiconductor companies’ capacity expansion plans in the U.S., TSMC’s new fab in Arizona aims to complete all preparations for mass production by the end of this year, and commences mass production using the 4-nanometer process in the first half of 2025. On the other hand, TSMC also plans to build a third fab in Arizona, which will use 2nm process or even more advanced technologies to manufacture wafers for customers, though the date for construction has yet to be disclosed.

Meanwhile, Intel plans to mass-produce its 20A and 18A nodes at its Arizona and Ohio plants in 2024 and 2025, respectively.

(Photo credit: Samsung)

Please note that this article cites information from Tom’s HardwareETnews, and MySA.
2024-06-19

[News] Intel Reportedly Invested in Luxshare’s Subsidiary

Recently, global chip giant Intel announced to acquire a stake in Dongguan Luxshare Technology Co., Ltd. (Referred to as “Dongguan Luxshare Technology”), a subsidiary of Luxshare Precision.

According to a report from WeChat account DRAMeXchange citing sources, it has shown that on June 12, Dongguan Luxshare Technology’s registered capital increased from around CNY 571 million to around CNY 589 million, an increase of about 3.1%, with Intel (China) Co., Ltd. as a new shareholder. It is reported that Intel China has invested CNY 17.662 million in the company.

Luxshare Precision primarily provides products for industries including consumer electronics, communications and data centers, automotive electronics, and medical sectors. As its subsidiary, Dongguan Luxshare Technology specializes in the production of communications equipment such as base station antennas, filters, and RRU, as well as interconnect products like connectors, cables, optical modules, and AOC, which have been widely used in applications like wireless communication base stations, data centers, servers, switches, and routers.

As a global leader in the semiconductor industry and computing innovation, Intel achieved a revenue of USD 63 billion in 2022. In the computing sector, statistics showed that in 4Q23, Intel shipped as many as 50 million PC processors, representing a year-on-year increase of 3% and a market share of 78%.

In the semiconductor field, Intel is developing foundry business at full throttle. According to its official website, to meet the growing global semiconductor demand and promote its IDM 2.0 strategy, Intel is ramping up its production capacity by investing about USD 20 billion in building fabs in Arizona and New Mexico, and over USD 20 billion in Ohio for the acquisition of Tower Semiconductor. It plans to pour up to EUR 80 billion to the EU in the entire semiconductor value chain over the next decade.

As per another report from the Securities Times, a source revealed that this cooperation does not involve the consumer electronics field but mainly the communications field. That means future products of Luxshare Precision in this field will be deeply integrated with Intel chips. For instance, both parties will engage in deep collaboration from the product development stage.

Furthermore, industry sources cited by the same report further explained that the transmission rate and bandwidth of communication-related products are fundamentally related to the chips they use. Therefore, Intel’s investment in Luxshare Precision’s subsidiary will enhance the competitiveness of Luxshare Precision’s products in the communications and data center sectors, contributing to the rapid development of this business.

As stated in Luxshare Precision’s annual report, the communications industry embraced new development opportunities amidst the wave of global digital transformation in 2023. Copper connectivity, optical connectivity, thermal modules, servers, and communication RF fields that Luxshare’s business has involved also saw significant growth, which became important drivers for the industry development.

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(Photo credit: Intel)

Please note that this article cites information from WeChat account DRAMeXchange and Securities Times.

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