JFET


2024-09-03

[News] Nanjing, China Achieved Breakthrough in Manufacturing Key SiC Chip for the First Time

As per a recent announcement by Nanjing Release, the National Third-Generation Semiconductor Technology Innovation Center (Nanjing) has successfully developed a key technology for the manufacturing of trench-type silicon carbide (SiC) MOSFET chip after four years of independent research. This breakt...

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