According to a report from Korea media outlet Yonhap News Agency, South Korea’s memory export to Taiwan has surged by 225% in the first half of the year.

The primary driver of this increase is reportedly due to South Korean chipmaker SK hynix’s supply of HBM to U.S. AI chip giant NVIDIA, which packages its AI accelerators at Taiwan’s TSMC.

A researcher at the Korea Institutes for Industrial Economics & Trade, Kim Yang-paeng, also noted that the sharp increase in exports is likely related to SK hynix’s supplies for TSMC’s final packaging of AI accelerators.

The report from Economic Daily News further highlights the strong momentum in NVIDIA’s AI chip shipments, with TSMC, as the key manufacturing partner, receiving steady advanced process orders.

The report from Yonhap News Agency also cited data from the industry ministry and the Korea International Trade Association released on August 11th, showing that South Korea’s memory exports to Taiwan in the first half of the year grew by 225.7% year-on-year, reaching USD 4.26 billion.

This growth significantly outpaces the overall increase in South Korea’s memory exports, which was 88.7%. Additionally, Taiwan has become South Korea’s third-largest market for memory exports in the first half of the year, climbing two spots to surpass Vietnam and the United States.

Another Korean media outlet, The Korea Herald, noted that since the 2010s, South Korea’s annual memory exports to Taiwan have ranged between USD 1 billion and 4 billion. The latest data indicates that this year’s export volume may set a new record, potentially reaching USD 8 billion.

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(Photo credit: SK hynix)

According to a report from Reuters citing industry sources, Samsung Electronics’ fifth-generation high-bandwidth memory (HBM3e) have passed tests by NVIDIA and could be used in NVIDIA’s AI processors.

The report further indicates that while no supply contract has been signed yet, one is expected soon, with potential deliveries starting in the fourth quarter of this year. The news also notes that the tested HBM3e chips are 8-layer, while Samsung’s 12-layer HBM3e have yet passed test.

However, in response to the matter, Samsung Electronics stated in a report from BusinessKorea on August 7 that they could not confirm stories related to their customers and that the report was not true.

The Samsung Electronics official cited by BusinessKorea also mentioned that, as previously stated during a conference call last month, the quality testing is still ongoing and there have been no updates since then.

Samsung had been working since last year to become a supplier of NVIDIA’s HBM3 and HBM3e. In late July, it is said that Samsung’s HBM3 has passed NVIDIA’s qualification, and would be used in the AI giant’s H20, which has been developed for the Chinese market in compliance with U.S. export controls.

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(Photo credit: Samsung)

According to a report from Tom’s Hardware citing industry sources, it’s indicated that Chinese memory giant ChangXin Memory Technologies (CXMT) has started mass production of HBM2. If confirmed, this is approximately two years ahead of the expected timeline, although the yield rate for HBM2 is still uncertain.

Earlier, Nikkei once reported that CXMT had begun procuring equipment necessary for HBM production, estimating it would take one to two years to achieve mass production. Currently, CXMT has ordered equipment from suppliers in the U.S. and Japan, with American companies Applied Materials and Lam Research having received export licenses.

Reportedly, HBM2 has a per-pin data transfer rate of approximately 2 GT/s to 3.2 GT/s. Producing HBM2 does not require the latest lithography techniques but does demand enough manufacturing capacity.

The process involves using through-silicon vias (TSV) to vertically connect memory components, which is rather complex. However, packaging the HBM KGSD (known good stack die) modules is still less intricate than manufacturing traditional DRAM devices using a 10nm process.

CXMT’s DRAM technology is said to be lagging behind that of Micron, Samsung, and SK hynix. These three companies have already started mass production of HBM3 and HBM3e and are preparing to advance to HBM4 in the coming years.

There also are reports indicating that Huawei, the Chinese tech giant subject to US sanctions, looks to collaborate with other local companies to produce HBM2 by 2026. Per a previous report from The Information, a group led by Huawei aimed at producing HBM includes Fujian Jinhua Integrated Circuit.

Moreover, since Huawei’s Ascend 910 series processors use HBM2, it has made HBM2 a crucial technology for advanced AI and HPC processors in China. Therefore, local manufacturing of HBM2 is a significant milestone for the country.

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(Photo credit: CXMT)

Japanese NAND flash giant Kioxia announced today (August 1st) that the building construction of Fab2 (K2) of its Kitakami Plant in Iwate Prefecture was completed in July. As demand is recovering, the company will gradually make capital investments while closely monitoring flash memory market trends. Kioxia plans to start operation at K2 in the fall of Calendar Year 2025, according to its press release.

A portion of investment for K2 will be subsidized by the Japanese government according to the plan approved in February 2024, according to Kioxia.

In addition, the company notes that some administration and engineering departments will move into a new administration building located adjacent to K2 beginning in November 2024 to oversee the operation of K2.

According to a report from Nikkei on July 31, Kioxia’s Kitakami Plant started production in 2020,with the construction of K2 began in 2022. Initially, K2 was scheduled to commence production in 2023.

However, due to a downturn in the memory market and weak demand for NAND Flash used in smartphones and PCs, Kioxia started to reduce production in October 2022, with the extent of production cuts exceeding 30%. As part of these production reduction measures, Kioxia postponed the production start of the K2 facility.

Nikkei’s report further indicates that with market conditions recovering, Kioxia ended its production cuts in June 2024, and the current production line utilization rate has returned to 100%.

To mass-produce advanced memory products, Kioxia, in collaboration with Western Digital (WD), plans to invest a total of 729 billion yen in the Yokkaichi and Kitakami plants, with the Japanese government providing up to 243 billion yen in subsidies.

The Kitakami plant will produce the most advanced “8th generation” memory, with a monthly production capacity of 25,000 wafers. These will be used in AI data centers, as well as in smartphones, PCs, and automotive applications.

On June 26, according to industry sources cited in a report from Reuters, Kioxia plans to submit an initial public offering (IPO) application to the Tokyo Stock Exchange in the near future, aiming to go public by the end of October. Sources indicate that Kioxia will submit its official IPO application by the end of August, with a target listing date at the end of October.

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• [News] NAND Flash Giant Kioxia Reportedly Plans IPO by Late October amid Market Recovery
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(Photo credit: Kioxia)

According to a report from Bloomberg, the US is reportedly considering new measures and could unilaterally impose restrictions on China as early as late August. These measures would limit China’s access to AI memory and related equipment capable of producing them.

Moreover, another report from Reuters further indicates that US allies, including semiconductor equipment manufacturers from Japan, the Netherlands, and South Korea—such as major Dutch semiconductor equipment maker ASML and Tokyo Electron—will not be affected in their shipments. The report also notes that countries whose exports will be impacted include Israel, Taiwan, Singapore, and Malaysia. 

Bloomberg, citing sources, revealed that the purpose of these measures is to prevent major memory manufacturers like Micron, SK hynix, and Samsung Electronics from selling high-bandwidth memory (HBM) to China.

These three companies dominate the global HBM market. Reportedly, regarding this matter, Micron declined to comment, while Samsung and SK hynix did not immediately respond to requests for comment. 

Bloomberg’s source also emphasized that the US has yet made a final decision. The source also state that if implemented, the new measures would cover chips such as HBM2, HBM3, and HBM3e, as well as the equipment needed to manufacture these chips.

The source further revealed that Micron will essentially not be affected by the new regulations, as Micron stopped exporting HBM to China after China banned Micron’s memory from being used in critical infrastructure in 2023.

Reportedly, it is still unclear what methods the US will use to restrict South Korean companies. One possibility is the Foreign Direct Product Rule (FDPR). Under this rule, if a foreign-made product uses any US technology, even just a small amount, the US can impose restrictions.

Both SK hynix and Samsung are said to be relying on chip design software and equipment from US companies such as Cadence Design Systems and Applied Materials.

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• [News] U.S. Reportedly Enhancing Chip Export Restrictions to China, while NVIDIA’s H20 Might Get Banned
  
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(Photo credit: SK hynix)